Patent EP0488264A2 successfully refreshed from Google Patents.
EP0488264A2
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Method of manufacturing a semiconductor device with improved electromigration resistance
Assignee: Toshiba Corp
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Filing: 1991-11-28
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Granted: —
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Expires: 2011-11-28
Abstract
Abstract To improve electromigration resistance and stress migration resistance, when a film is formed by depositing Al or Al alloy on a semiconductor substrate (11), the film (13, 14) is formed stepwise by stepwise changing the heating temperature of the semiconductor substrate at at least two stages.
Inventors
- 👤 Toshihiko Katsura
- 👤 Masahiro Abe
- 👤 Tomoyuki Iguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 21:41
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10P14/412; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; Y; Y10; Y10S; Y10S438/00; Y10S438/927
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
49 words
A method of manufacturing a semiconductor device in which a film is formed by depositing Al or Al alloy on a semiconductor substrate (11), characterized in that the film (13, 14) is formed stepwise by stepwise changing the heating temperature of the semiconductor substrate at at least two stages.
Claim 2
Independent Claim
48 words
A method of manufacturing a semiconductor device in which a film is formed by depositing Al or Al alloy on a semiconductor substrate (31), characterized in that the film (33, 34) is formed stepwise by stepwise changing the speed of forming the film at at least two stages.
Claim 3
Dependent Claim
26 words
The method of claim 2, wherein the film (33, 34) is formed under the condition that the semiconductor substrate is kept heated at 440°C or higher.
Claim 4
Independent Claim
61 words
A method of manufacturing a semiconductor device in which a film is formed by depositing Al or Al alloy on a semiconductor substrate (50) formed with a hole (57) in accordance with sputtering, characterized in that the film (53, 54) is formed at an initial stage under the condition that the semiconductor substrate (50) is kept heated at 180°C or lower.
Claim 5
Dependent Claim
38 words
The method of claim 4, wherein the initial stage is defined as the stage where thickness of the film formed by depositing Al or Al alloy reaches approximately 1000 Å or more at areas other than the hole.
Claim 6
Dependent Claim
31 words
The method of claim 4 or 5, wherein the film is formed under the condition that the semiconductor substrate (50) is kept heated at 460°C or higher after the initial stage.
Claim 7
Independent Claim
59 words
A method of manufacturing a semiconductor device in which a film is formed by depositing Al or Al alloy on a semiconductor substrate (100) formed with a hole (102) in accordance with sputtering, characterized in that the film (104) is formed at an initial stage at a speed lower than that at a stage other than the initial stage.
Claim 8
Dependent Claim
40 words
The method of claim 7, wherein the initial stage is defined as the stage where thickness of the film (104) formed by depositing Al or Al alloy reaches approximately 3000 Å or more at areas other than the hole (102).
Claim 9
Dependent Claim
32 words
The method of claim 7 or 8, wherein the film (104) is formed under the condition that the semiconductor substrate (100) is kept heated at 460°C or higher at the initial stage.
References Cited (Backward Citations)
No citation records indexed.
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