Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
27 words
A zinc oxide sintered body having a (002) crystal orientation larger than the (101) crystal orientation and a density of at least 4. 5 g/cm 3 .
Claim 2
Dependent Claim
27 words
A zinc oxide sintered body having a (002) crystal orientation larger than the (101) crystal orientation and a density of at least 4. 5 g/cm 3 .
Claim 3
Dependent Claim
37 words
A zinc oxide sintered body as claimed in Claim 1 characterised in that it has dispersed therein an element having a positive valency of at least 3 and has a resistivity of not larger than 1 ohm.cm.
Claim 4
Dependent Claim
42 words
A process for the preparation of a zinc oxide sintered body, characterised in that it comprises neutralizing an aqueous sulfuric acid solution of zinc with ammonia, calcining the thus-formed precipitate, and sintering the calcined precipitate at a temperature of at least 1,300°C.
Claim 5
Dependent Claim
42 words
A process for the preparation of a zinc oxide sintered body, characterised in that it comprises neutralizing an aqueous sulfuric acid solution of zinc with ammonia, calcining the thus-formed precipitate, and sintering the calcined precipitate at a temperature of at least 1,300°C.
Claim 6
Dependent Claim
65 words
A process for the preparation of a zinc oxide sintered body, characterised in that it comprises neutralizing a mixed solution comprising an oxide or aqueous sulfuric acid solution of an element having a positive valency of at least 3 and an aqueous sulfuric acid solution of zinc with ammonia, calcining the thus-formed precipitate, and sintering the calcined precipitate at a temperature of at least 1,300°C.
Claim 7
Dependent Claim
65 words
A process for the preparation of a zinc oxide sintered body, characterised in that it comprises neutralizing a mixed solution comprising an oxide or aqueous sulfuric acid solution of an element having a positive valency of at least 3 and an aqueous sulfuric acid solution of zinc with ammonia, calcining the thus-formed precipitate, and sintering the calcined precipitate at a temperature of at least 1,300°C.
Claim 8
Dependent Claim
63 words
A process for the preparation of a zinc oxide sintered body, characterised in that it comprises neutralizing an aqueous sulfuric acid solution of zinc with ammonia, calcining the thus-formed zinc hydroxide to produce zinc oxide, mixing the oxide with an oxide of an element having a positive valency of at least 3, and sintering the mixture at a temperature of at least 1,300°C.
Claim 9
Dependent Claim
63 words
A process for the preparation of a zinc oxide sintered body, characterised in that it comprises neutralizing an aqueous sulfuric acid solution of zinc with ammonia, calcining the thus-formed zinc hydroxide to produce zinc oxide, mixing the oxide with an oxide of an element having a positive valency of at least 3, and sintering the mixture at a temperature of at least 1,300°C.
Claim 10
Dependent Claim
30 words
A sputtering target comprising a zinc oxide sintered body having a (002) crystal orientation larger than the (101) crystal orientation and a density of at least 4.5 g/cm 3 .
Claim 11
Dependent Claim
30 words
A sputtering target comprising a zinc oxide sintered body having a (002) crystal orientation larger than the (101) crystal orientation and a density of at least 4.5 g/cm 3 .
Claim 12
Dependent Claim
22 words
A sputtering target as claimed in Claim 6, characterised in that it has a sputtering surface inclined relative to the substrate surface.
Claim 13
Dependent Claim
23 words
A sputtering target as claimed in Claim 6 or Claim 7, characterised in that it has a resistivity not larger than 1 ohm.cm.
Claim 14
Dependent Claim
25 words
A sputtering target comprising a zinc oxide body characterised in that it is made by a process as claimed in Claim 3, 4 or 5.
Claim 15
Dependent Claim
54 words
A process for making a zinc oxide film, which comprises carrying out film-forming sputtering on a substrate by using a sputtering target having a sputtering surface inclined relative to the substrate surface or parallel to the substrate surface characterised in that the sputtering target is as claimed in Claim 6, 7, 8 or 9.