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EP0484232A2
Expired / Lapsed
EP
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Superconducting device having an extremely short superconducting channel formed of oxide superconductor material and method for manufacturing the same
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-10-29
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Granted: —
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Expires: 2011-10-29
Abstract
Abstract A superconducting device comprises a substrate, and a superconducting channel constituted of an oxide superconductor thin film formed to have an angle to a deposition surface of the substrate. A superconductor source electrode and a superconductor drain electrode are formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconductor source electrode and the superconductor drain electrode. A gate electrode is formed of an oxide superconductor thin film which is deposited in parallel to the deposition surface of the substrate and which has an end abutted through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel.
Inventors
- 👤 Takao Nakamura
- 👤 Hiroshi Inada
- 👤 Michitomo Iiyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 07:18
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/20; H10N60/205; H10N60/207; Y; Y10; Y10S; Y10S505/00; Y10S505/825; Y10S505/873
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
122 words
A superconducting device comprising a substrate, a superconducting channel constituted of a first oxide superconductor thin film formed to have an angle to a deposition surface of said substrate, a superconductor source electrode and a superconductor drain electrode formed at opposite ends of said superconducting channel, so that a superconducting current can flow through said superconducting channel between said superconductor source electrode and said superconductor drain electrode, and a gate electrode in the form of a sheet having an end abutted through an insulating layer on said superconducting channel so as to control the superconducting current flowing through said superconducting channel, said gate electrode being formed of a second oxide superconductor thin film in parallel to said deposition surface of said substrate.
Claim 2
Dependent Claim
116 words
A superconducting device claimed in Claim 1 wherein said second oxide superconductor thin film forming said said gate electrode is formed on a first insulating layer formed on said deposition surface of said substrate, and a second first insulating layer formed on said second oxide superconductor thin film forming said said gate electrode, so that a stacked structure is formed of said first insulating layer, said second oxide superconductor thin film and said second first insulating layer, and said stacked structure has an end surface having an angle to said deposition surface of said substrate, and said first oxide superconductor thin film forming said superconducting channel is formed on said end surface through said gate insulator.
Claim 3
Dependent Claim
46 words
A superconducting device claimed in Claim 2 wherein said second oxide superconductor thin film forming said said gate electrode has a thickness of not greater than 100nm and said first oxide superconductor thin film forming said superconducting channel has a thickness of not greater than 5nm.
Claim 4
Dependent Claim
31 words
A superconducting device claimed in Claim 2 wherein said second oxide superconductor thin film forming said said gate electrode has a c -axis perpendicular to said deposition surface of said substrate.
Claim 5
Dependent Claim
38 words
A superconducting device claimed in Claim 2 wherein said angle is 90° and said first oxide superconductor thin film forming said superconducting channel formed on said end surface has an a -axis in parallel to said end surface.
Claim 6
Dependent Claim
39 words
A superconducting device claimed in Claim 2 wherein said angle is less than 90° and said first oxide superconductor thin film forming said superconducting channel formed on said end surface has a c -axis perpendicular to said and surface.
Claim 7
Dependent Claim
24 words
A superconducting device claimed in Claim 2 wherein said first and second oxide superconductor thin films are formed of a high-Tc oxide superconductor material.
Claim 8
Dependent Claim
26 words
A superconducting device claimed in Claim 2 wherein said first and second oxide superconductor thin films are formed of a high-Tc copper-oxide type oxide superconductor material.
Claim 9
Dependent Claim
50 words
A superconducting device claimed in Claim 8 wherein said first and second oxide superconductor thin films are formed of the same material selected from the group consisting of a Y-Ba-Cu-O type compound oxide superconductor material, a Bi-Sr-Ca-Cu-O type compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O type compound oxide superconductor material.
Claim 10
Dependent Claim
38 words
A superconducting device claimed in Claim 7 wherein said substrate is formed of a material selected from the group consisting of a MgO (100) substrate, a SrTiO₃ (100) substrate and a CdNdAlO₄ (001) substrate, and a semiconductor substrate.
Claim 11
Dependent Claim
41 words
A superconducting device claimed in Claim 7 wherein said substrate is formed of a silicon substrate and a principal surface of the silicon substrate is coated with insulating material layers which are formed of a MgAl₂O₄ layer and a BaTiO₃ layer.
Claim 12
Independent Claim
223 words
A method of manufacturing a superconducting device, comprising the step of forming and stacking a first oxide superconducting thin film and a first insulating layer on an insulting surface of a substrate in the name order, partially removing said stacked structure of said first oxide superconducting thin film and said first insulting layer so as to have a smooth continuous end surface having an angle to said insulting surface of said substrate and extending from said first insulting layer at least to a bottom surface of said first oxide superconducting thin film, and forming and stacking a second insulting layer and a second oxide superconducting thin film in the name order on said end surface of said stacked structure of said first oxide superconducting thin film and said first insulting layer, so that said first oxide superconducting thin film functions as a gate electrode and said second insulting layer functions as a gate insulator and so that a first portion of said of said second oxide superconducting thin film joining to said end surface of said first oxide superconducting thin film through said second insulting layer forms a superconducting channel, and second and third portions of said second oxide superconducting thin film at both sides of said first portion of said second oxide superconducting thin film form a source and a drain, respectively.
Claim 13
Dependent Claim
47 words
A method claimed in Claim 12 wherein said smooth continuous end surface is formed to have an angle of 90° to said insulting surface of said substrate and said second oxide superconducting thin film is formed by a sputtering at a temperature of not greater than 650°C.
Claim 14
Dependent Claim
48 words
A method claimed in Claim 12 wherein said smooth continuous end surface is formed to have an angle of not less than 90° to said insulting surface of said substrate and said second oxide superconducting thin film is formed by a sputtering at a temperature of about 700°C.
References Cited (Backward Citations)
No citation records indexed.
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