Patent EP0481741A2 successfully refreshed from Google Patents.
EP0481741A2
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EP
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High frequency power amplifier circuit and mobile radio communication apparatus using the same
Assignee: Hitachi Ltd
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Filing: 1991-10-10
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Granted: —
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Expires: 2011-10-10
Abstract
Abstract Amplifying elements of a final stage circuit are biased in definite voltage, and amplifying elements of a drive circuit are biased in variable voltage. Then amplifying elements of the final stage circuit are operated at the operation point to enable the class "AB" amplification where the power efficiency and the linearity are compatible, and bias of amplifying elements of the drive circuit is made variable thereby the power gain may be varied at a wide range. The high frequency power amplifier circuit is constituted by multiple stages comprising the final stage circuit and the drive circuit, and amplifying elements of the final stage circuit are constituted by GaAs FET and amplifying elements of the drive circuit are constituted by enhancement type MOS transistor, so that even in super high frequency band of quasi SHF class, while the good amplification characteristics and the power efficiency are secured, the high frequency output power can be variably controlled in a wide range using system capable of being realized simply. Accordingly, without controlling the bias voltage having opposite polarity of the operation source voltage, the power gain of the whole high frequency power amplifier circuit can be varied in a wide range.
Inventors
- 👤 Yoshitomi Toba
- 👤 Tetsuaki Adachi
- 👤 Akira Masuda
- 👤 Shinji Yamada
- 👤 Mamoru Itou
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 08:27
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/02; H03F1/0205; H03F1/0211; H03F1/0216; H03F1/0233; H03F3/00; H03F3/189; H03F3/19; H03F3/193; H03F3/20; H03F3/24; H03F3/245; H03G; H03G3/00; H03G3/20; H03G3/30; H03G3/3036; H03G3/3042; H03G3/3047; H04; H04B; H04B1/00; H04B1/02; H04B1/04; H04B2001/0408; H04B2001/0416
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
144 words
A high frequency power amplifier circuit (100) comprising: an input terminal (EXI) inputting high frequency input signals (Pin, Rin) subjected to low power modulation; an output terminal (EXO) supplying high frequency output signals (Pout, Rout) being power amplified; a drive circuit (3) connected electrically to said input terminal (EXI) for amplifying the high frequency input signals (Pin, Rin) to prescribed power, said drive circuit (3) having first amplifying elements (P3, PM3, M1) with bias condition being made variable by a control signal (APC), said prescribed power being determined by gain of said first amplifying element; and a final stage circuit (1) connected electrically to said drive circuit (3) for outputting the high frequency output signal (Pout) in response to the signal amplified to the prescribed power, said final stage circuit (1) having second amplifying elements (P1, PM1, G1) to make the bias condition constant.
Claim 2
Dependent Claim
50 words
A high frequency power amplifier circuit as set forth in claim 1, further comprising: a variable bias means (5) for varying bias condition of said first amplifying elements in response to the control signal (APC); and a bias means (4) for making bias condition constant of said second amplifying elements.
Claim 3
Dependent Claim
35 words
A high frequency power amplifier circuit as set forth in claim 2, wherein said second amplifying elements are supplied with gate bias by said bias means (4) so that the class "AB" amplificatlon is performed.
Claim 4
Dependent Claim
22 words
A high frequency power amplifier circuit as set forth in claim 3, wherein said first and second amplifying elements are GaAs FETs.
Claim 5
Dependent Claim
21 words
A high frequency power amplifier circuit as set forth in claim 3, wherein said first and second amplifying elements are MOSFETs.
Claim 6
Dependent Claim
31 words
A high frequency power amplifier circuit as set forth in one claim selected from claims 4 and 5, wherein said high frequency power amplifier circuit (100) is a narrow-band amplifier circuit.
Claim 7
Dependent Claim
47 words
A high frequency power amplifier circuit as set forth in claim 3, further comprising: a variable attenuator for increasing/decreasing input level of said drive circuit by control signal from the outside, said variable bias means and said variable attenuator performing variable control of high frequency output power.
Claim 8
Dependent Claim
54 words
A high frequency power amplifier circuit as set forth in claim 3, further comprising: a variable voltage source circuit for attenuating the operation source voltage of said drive circuit in response to the control signal, said variable bias means and said variable voltage source circuit performing variable control of the high frequency output power.
Claim 9
Dependent Claim
30 words
A high frequency power amplifier circuit as set forth in claim 3, wherein control signal of said variable bias means and control signal of said variable attenuator are independently supplied.
Claim 10
Dependent Claim
71 words
A mobile radio communication apparatus comprising: an antenna (900); an RF receiving unit (800) coupled with said antenna; a speaker (801) coupled with said RF receiving unit; a microphone (501); a base band unit (600) coupled with said microphone; and a high frequency power amplifier circuit as set forth in claim 2, having its input terminal couples with said base band unit and having its output terminal coupled with said antenna.
Claim 11
Dependent Claim
24 words
A mobile radio communication apparatus as set forth in claim 10, further comprising: a microcomputer for transmitting control signal to said variable bias means.
Claim 12
Dependent Claim
29 words
A high frequency power amplifier circuit as set forth in claim 1, wherein said first amplifying elements are enhancement type MOSFET, and said second amplifying elements are GaAs FET.
Claim 13
Dependent Claim
28 words
A high frequency power amplifier circuit as set forth in claim 12, wherein said high frequency power amplifier circuit is a module hybrid integrated on a ceramic substrate.
Claim 14
Dependent Claim
28 words
A high frequency power amplifier circuit as set forth in claim 12, wherein said variable bias means generates positive bias voltage, and said bias generates negative bias voltage.
Claim 15
Dependent Claim
22 words
A radio communication apparatus wherein the radio communication apparatus includes the high frequency power amplifier circuit as set forth in claim 12.
Claim 16
Dependent Claim
42 words
A high frequency power amplifier circuit constituted by multiple stages comprising a final stage circuit and a drive circuit, wherein amplifying elements of said final stage circuit are GaAs FET, and amplifying element of said drive circuit are enhancement type silicon FET.
Claim 17
Dependent Claim
96 words
A high frequency power amplifier circuit comprising: a final stage circuit using first sort of amplifying elements and being operated in amplification by positive operation source voltage and negative bias voltage; a drive circuit using second sort of amplifying elements and being operated in amplification by positive operation source voltage and positive bias voltage; a negative bias circuit for supplying said first sort of amplifying elements with prescribed negative bias voltage; and a positive bias circuit for supplying said second sort of amplifying elements with positive bias voltage varying in response to signals from the outside.
Claim 18
Dependent Claim
36 words
A high frequency power amplifier circuit as set forth in claim 17, wherein said negative bias circuit is a fixed bias circuit for supplying definite negative bias voltage to amplifying elements of said final stage circuit.
Claim 19
Dependent Claim
56 words
A radio communication apparatus having a high frequency power amplifier circuit comprising a final stage circuit with amplifying elements being GaAs FET and a drive circuit with amplifying elements being enhancement type silicon FET, wherein gate bias voltage of the silicon FET of said drive circuit is varied thereby the radio transmission power is variably controlled.
Claim 20
Dependent Claim
41 words
A radio communication apparatus as set forth in claim 19, wherein gate bias voltage of the silicon FET of said drive circuit is varied based on the strength of the received radio waves thereby the radio transmission power is optimization controlled.
Claim 21
Dependent Claim
24 words
A radio communication apparatus as set forth in claim 20, wherein gate bias voltage of the silicon FET is supplied by a D/A converter.
Claim 22
Dependent Claim
33 words
A radio communication apparatus as set forth in any one of claims 19 to 21, wherein operation condition of said final stage circuit is fixed b definite operation source voltage and bias voltage.
Claim 23
Dependent Claim
27 words
A radio communication apparatus as set forth in any one of claims 19 to 22, wherein said final stage circuit and said drive circuit are linearly operated.
Claim 24
Dependent Claim
80 words
A radio communication apparatus comprising: a high frequency power amplifier circuit having a final stage circuit with GaAs FET as amplifying elements and a drive circuit with enhancement type silicon FET as amplifying elements, said final stage circuit and said drive circuit being connected in multiple stages, for linearly amplifying high frequency signals subjected to low power modulation; and means for controlling the transmission power by varying the output level of input signals of said high frequency power amplifier circuit.
References Cited (Backward Citations)
No citation records indexed.
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