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EP0480557A2
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Method of making P-type compound semiconductor
Assignee: Mitsubishi Electric Corp
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Filing: 1991-03-07
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Granted: —
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Expires: 2011-03-07
Abstract
Abstract A P-type compound semiconductor layer doped with carbon is formed on a semi-insulating substrate by placing the substrate in a reactor, and carrying out vapor-phase epitaxy by feeding vapors of an organic metal having a methyl radical, arsine, and an alkyl compound of arsenic substantially simultaneously into the reactor so that a C-doped P-type compound semiconductor is deposited on the substrate.
Inventors
- 👤 Koji c/o Mitsubishi Denki K. K. Ando
- 👤 Tetsuya c/o Mitsubishi Denki K. K. Yagi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 09:03
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; C30B29/42; H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/2203; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S148/11
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
39 words
A method of making a P-type compound semiconductor, in which vapor-phase epitaxy involving thermal decomposition is used and in which an organic metal having a methyl radical, arsine, and an alkyl compound of arsenic are used as vapor sources.
Claim 2
Independent Claim
39 words
A method of making a P-type compound semiconductor, in which vapor-phase epitaxy involving thermal decomposition is used and in which an organic metal having a methyl radical, arsine, and an alkyl compound of arsenic are used as vapor sources.
Claim 3
Dependent Claim
22 words
A method of making a P-type compound semiconductor according to claim 1, wherein said organic metal having a methyl radical is trimethylgallium.
Claim 4
Dependent Claim
20 words
A method of making a P-type compound semiconductor according to claim 1 wherein said alkyl compound of arsenic is trimethylarsine.
Claim 5
Dependent Claim
32 words
A method of making a P-type compound semiconductor according to claim 1 wherein arsine is fed in the ratio of from 0.6 to 0.9 to said organic metal having a methyl radical.
Claim 6
Dependent Claim
44 words
A method making a P-type compound semiconductor according to claim 1 wherein said organic metal having a methyl radical is trimethylgallium, said alkyl compound of arsenic is trimethylarsine, and arsine is fed in a ratio of from 0.6 to 0.9 with respect to trimethylgallium.
Claim 7
Independent Claim
24 words
A method of making a P-type compound semiconductor according to either of claims 1 or 5 wherein MOCVD is used as said vapor-phase epitaxy.
Claim 8
Independent Claim
24 words
A method of making a P-type compound semiconductor according to either of claims 1 or 5 wherein MOMBE is used as said vapor-phase epitaxy.
Claim 9
Independent Claim
30 words
A method of making a P-type compound semiconductor according to any one of claims 1 to 7 wherein said semiconductor is used as a layer which is not active optically.
Claim 10
Independent Claim
77 words
A method of making a P-type compound semiconductor according to any one of claims 1 to 8, wherein said method comprises the steps of: placing a semi-insulating substrate in a reactor; and supplying the organic metal having a methyl radical, arsine, and the alkyl compound of arsenic substantially simultaneously to said reactor and causing vapor-phase epitaxy involving thermal decomposition to take place, whereby a P-type compound semiconductor layer doped with carbon is formed on said semi-insulating substrate.
Claim 11
Independent Claim
174 words
A method according to any one of claims 1 to 9 for making a semiconductor laser device, said semiconductor laser device comprising a semi-insulating substrate, a P-type first semiconductor layer doped with carbon and disposed on said substrate, an N-type second semiconductor layer disposed on said first semiconductor layer, an N-type third semiconductor layer disposed on said second semiconductor layer having a forbidden band gap narrower than those of said first and second semiconductor layers, an N-type fourth semiconductor layer disposed on said third semiconductor layer having a forbidden band gap broader than that of said third semiconductor layer, and a diffusion P-type region formed by diffusion to extend through portions respectively of at least said second, third and fourth semiconductor layers; said method comprising the steps of: forming said first semiconductor layer by vapor-phase epitaxy involving thermal decomposition with the organic metal having a methyl radical, arsine, and the alkyl compound of arsenic being used as vapor sources; and forming said second, third and fourth semiconductor layers by vapor-phase epitaxy involving thermal decomposition.
Claim 12
Dependent Claim
102 words
A semiconductor laser device comprising: a semi-insulating substrate; a P-type first semiconductor layer disposed on said substrate; an N-type second semiconductor layer dis- posed on said first semiconductor layer; an N-type third semiconductor layer disposed on said second semiconductor layer having a forbidden band gap narrower than those of said first and second semiconductor layers; an N-type fourth semiconductor layer disposed on said third semiconductor layer having a forbidden band gap broader than that of said third semiconductor layer; and a diffusion P-type region formed by diffusion to extend through portions respectively of at least said second, third and fourth semiconductor layers;
Claim 13
Dependent Claim
102 words
A semiconductor laser device comprising: a semi-insulating substrate; a P-type first semiconductor layer disposed on said substrate; an N-type second semiconductor layer dis- posed on said first semiconductor layer; an N-type third semiconductor layer disposed on said second semiconductor layer having a forbidden band gap narrower than those of said first and second semiconductor layers; an N-type fourth semiconductor layer disposed on said third semiconductor layer having a forbidden band gap broader than that of said third semiconductor layer; and a diffusion P-type region formed by diffusion to extend through portions respectively of at least said second, third and fourth semiconductor layers;
Claim 14
Dependent Claim
21 words
A semiconductor laser device according to claim 11, wherein said first, second, third and fourth semiconductor layers are compound semiconductor layers.
Claim 15
Dependent Claim
22 words
A semiconductor laser device according to claim 11, wherein said first semiconductor layer is a P-type GaAs semiconductor layer doped with carbon.
Claim 16
Dependent Claim
18 words
A semiconductor laser device according to claim 11 wherein said diffusion P-type region is formed by diffusing zinc.
References Cited (Backward Citations)
No citation records indexed.
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