Patent EP0479700A2 successfully refreshed from Google Patents.
EP0479700A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Current mode gate drive for power MOS transistors
Assignee: International Business Machines Corp
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Filing: 1991-08-29
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Granted: —
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Expires: 2011-08-29
Abstract
Abstract A power amplifier having a power MOS transistor output device. The gate drive for the power device is a bidirectional current source. In one form of the gate driver circuit, the bidirectional current source includes the capability of controlling the limits of the gate current, which in turn controls the slew rate of the power amplifier. <IMAGE>
Inventors
- 👤 Gary Dale Carpenter
- 👤 Martin Birk Lundberg
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 08:24
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/50; H03F3/505; H03F3/34; H03F3/343; H03F3/345; H03F3/3455
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
27 words
A circuit comprising a power MOSFET having a gate and a bidirectional current source coupled to the gate to provide gate current drive to the power MOSFET.
Claim 2
Dependent Claim
27 words
A circuit comprising a power MOSFET having a gate and a bidirectional current source coupled to the gate to provide gate current drive to the power MOSFET.
Claim 3
Dependent Claim
15 words
The circuit of claim 1 in which the power MOSFET is a linear output stage.
Claim 4
Dependent Claim
29 words
The circuit of claim 1 or 2 in which the bidirectional current source includes means for controlling the limits of the gate current to thereby control the slew rate.
Claim 5
Dependent Claim
24 words
The circuit of claim 1, 2 or 3 in which the power MOSFET and the bidirectional current source are integrated on a common substrate.
References Cited (Backward Citations)
No citation records indexed.
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