Patent NL39732C successfully refreshed from Google Patents.
Patent US3092984A successfully refreshed from Google Patents.
Patent EP0477906A2 successfully refreshed from Google Patents.
EP0477906A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Plasma processing apparatus using plasma produced by microwaves
Assignee: Hitachi Ltd
•
Filing: 1991-09-25
•
Granted: —
•
Expires: 2011-09-25
Abstract
Abstract A plasma processing apparatus includes a plasma processing chamber (6) having a stage for placing a substrate to be plasma processed, an exhaust port (21) and a gas introduction nozzle (20) for plasma processing coupled therewith, and a cavity resonator (1) for closing the plasma processing chamber in vacuum manner and coupled through a microwave introducing window (5) through which microwaves are introduced and having slots (4, 4') for radiating microwaves to the plasma processing chamber. Microwaves having increased intensity of an electromagnetic field is supplied to the processing chamber to produce plasma to effect processing of the substrate. An area in which diffusion of plasma is suppressed to reduce loss is formed only in the vicinity of an inner wall of the processing chamber.
Inventors
- 👤 Kazuhiro Ohara
- 👤 Toru Otsubo
- 👤 Ichirou Este Shiti Shonan Mutsuura 3-904 Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 11:57
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32211; H01J37/32247; H01J37/32431; H01J37/32623; H01J37/3266; H01J37/32669; H01J37/32678; H01J37/32688; H01J37/32715; H10; H10P; H10P72/00; H10P72/04; H10P72/0402
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
88 words
A microwave plasma processing apparatus comprising: a plasma processing chamber (6) including a stage (15) for placing an object to be plasma processed; a cavity resonator (1) including slots (4, 4') coupled with said processing chamber through a microwave introducing window (5) for supplying microwaves to said processing chamber; and means (7, 8, 9: 7': 23, 24, 25: 7, 8) provided on said processing chamber for forming a magnetic field, the magnetic flux density in the vicinity of said object to be processed being 0.001 T or less.
Claim 2
Dependent Claim
49 words
A microwave plasma processing apparatus according to Claim 1, wherein a reduction area (30) is formed substantially only in the vicinity of an inner wall of said plasma processing chamber for reducing diffusion to said inner wall and loss in said inner wall of plasma produced by said microwaves.
Claim 3
Dependent Claim
35 words
A microwave plasma processing apparatus according to Claim 2, wherein said reduction area is formed by a multi-pole cusp magnetic field by a plurality of magnets (7, 8, 9: 7': 23, 24, 25: 7, 8).
Claim 4
Dependent Claim
20 words
A microwave plasma processing apparatus according to Claim 3, wherein said magnets include permanent magnets (7, 8, 9: 7', 8).
Claim 5
Dependent Claim
18 words
A microwave plasma processing apparatus according to Claim 3, wherein said magnets include coil magnets (23, 24, 25).
Claim 6
Dependent Claim
33 words
A microwave plasma processing apparatus according to Claim 3, wherein the magnetic flux density in positions of magnetic poles of said multi-pole cusp magnetic field is set to be an electron cyclotron resonance.
Claim 7
Dependent Claim
43 words
A microwave plasma processing apparatus according to Claim 2, further comprising a magnetic field formed in parallel to a surface of said microwave introducing window being in contact with said plasma processing chamber to suppress loss of plasma in said microwave introducing window.
Claim 8
Dependent Claim
43 words
A microwave plasma processing apparatus according to Claim 3, further comprising a magnetic field formed in parallel to a surface of said microwave introducing window being in contact with said plasma processing chamber to suppress loss of plasma in said microwave introducing window.
Claim 9
Dependent Claim
27 words
A microwave plasma processing apparatus according to Claim 1, wherein said stage (15) is formed of a conductive member and is applied with a high frequency voltage.
Claim 10
Dependent Claim
51 words
A microwave plasma processing apparatus according to Claim 3, wherein each of said plurality of magnets (7, 8, 9: 7': 23, 24, 25: 7, 8) has sufficiently high remanent magnetic flux density so that the magnetic flux density in positions of the magnetic poles in said processing chamber is 0.0875 T.
Claim 11
Dependent Claim
125 words
A microwave plasma processing apparatus comprising: a plasma processing chamber (6) including a stage (15) for placing an object to be plasma processed, means (21) for exhausting said processing chamber to vacuum and means (20) for introducing plasma processing gas into said processing chamber; a cavity resonator (1) coupled with said processing chamber through a microwave introducing window (5) and including slots (4, 4') for radiating microwaves to said processing chamber; and means (7, 8, 9: 7': 23, 24, 25: 7, 8) disposed inside or outside of said processing chamber to form a magnetic field substantially only in the vicinity of an inner wall of said processing chamber to thereby reduce diffusion to said inner wall and loss in said inner wall of said plasma.
Claim 12
Dependent Claim
62 words
A microwave plasma processing apparatus according to Claim 11, wherein said reducing means includes a plurality of magnets (7, 8, 9: 7': 23, 24, 25: 7, 8) disposed in an outer periphery of said processing chamber so that adjacent polarities thereof are opposite to each other and said magnetic field is a multi-pole cusp magnetic field formed by said plurality of magnets.
Claim 13
Dependent Claim
27 words
A microwave plasma processing apparatus according to Claim 11, wherein said stage (15) is formed of a conductive member and is applied with a high frequency voltage.
Claim 14
Dependent Claim
42 words
A microwave plasma processing apparatus according to Claim 12, wherein each of said plurality of magnets has sufficiently high remanent magnetic flux density so that the magnetic flux density in positions of the magnetic poles in said processing chamber is 0.0875 T.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.