Patent EP0477108A2 successfully refreshed from Google Patents.
EP0477108A2
Expired / Lapsed
EP
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Voltage generator for a semiconductor integrated circuit
Assignee: Fujitsu Ltd
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Filing: 1991-09-20
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Granted: —
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Expires: 2011-09-20
Abstract
Abstract A semiconductor integrated circuit comprises a chip (TIP), an oscillator (200) provided on the for producing an alternate current with a controlled amplitude that is determined by the drive voltage, a rectifier (300) provided on the chip for receiving and converting the alternate current into a direct current, a voltage detector (100) provided on the chip for detecting a voltage level of the direct current, and a controller (600) provided on the chip and supplied with the detection signal from the voltage detector for controlling the oscillator such that the amplitude of the alternate current is changed in response to the detection signal. The controller increases the amplitude of the alternate current when the voltage level of the direct current has decreased below a predetermined level and decreases the amplitude of the alternate current when the voltage level of the direct current has increased above the predetermined level.
Inventors
- 👤 Masao C/O Fujitsu Limited Taguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 16:36
CPC Classifications
G; G11; G11C; G11C5/00; H; H02; H02M; H02M3/00; H02M3/02; H02M3/04; H02M3/06; H02M3/07
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
226 words
A semiconductor integrated circuit, comprising: a plurality of semiconductor devices (CKT); a chip (TIP) for supporting said semiconductor devices; oscillation means (200) provided on said chip for producing an alternate current; rectification means (300) provided on said chip for receiving and converting said alternate current into a direct current, said rectification means supplying said direct current to said semiconductor devices on said chip; voltage detection means (100) provided on said chip and supplied with said direct current from said rectification means for detecting a voltage level of said direct current, said voltage detection means producing a detection signal indicative of said voltage level; and control means (600) provided on said chip and supplied with said detection signal from said voltage detection means, for controlling the oscillation means; characterized in that: said oscillation means is supplied with a drive voltage (V1) and producing said alternate current with a controlled amplitude that is determined by said drive voltage; and said control means controls the oscillation means such that the amplitude of the alternate current is changed in response to the detection signal, said control means increasing said amplitude of the alternate current when said voltage level of said direct current has decreased below a predetermined level, and decreasing said amplitude of the alternate current when said voltage level of said direct current has increased above said predetermined level.
Claim 2
Dependent Claim
32 words
A semiconductor integrated circuit as claimed in claim 1 characterized in that said oscillation means comprises a ring oscillator (200) oscillating at a frequency that is determined by said drive voltage (V1).
Claim 3
Dependent Claim
45 words
A semiconductor integrated circuit as claimed in claim 2 characterized in that said oscillation means further comprises a buffer amplifier (400, 500) supplied with an output of said ring oscillator (200) for producing said alternate current with the amplitude determined by said drive voltage (V1).
Claim 4
Dependent Claim
72 words
A semiconductor integrated circuit as claimed in claim 1 characterized in that said oscillation means comprises an oscillator (200) for oscillating at a predetermined frequency, and a buffer amplifier (400, 500) supplied with an output of said oscillator for amplifying the same, said amplifier being driven in response to said drive voltage (V1) for producing said alternate current with the amplitude determined by said drive voltage as a result of said amplification.
Claim 5
Dependent Claim
240 words
A semiconductor integrated circuit as claimed in claim 1 characterized in that said oscillation means (200) has a first output terminal for producing a first alternate current having a first phase as a first component of said alternate current and a second output terminal for producing a second alternate current having a second, inverted phase as a second component of said alternate current, said rectification means comprising a charge pump circuit (300) including a first capacitor (C1) having a first end for receiving the first alternate current from said first output terminal of said oscillation means and a second capacitor (C2) having a first end for receiving the second alternate current from said second output terminal of said oscillation means, as a second output signal of the oscillation means, first diode means (D1) having an anode connected to a second, opposite end of the first capacitor and a cathode connected to the ground, second diode means (D2) having a cathode connected to said second end of the first capacitor and an anode, third diode means (D3) having an anode connected to said second, opposite end of the second capacitor and a cathode connected to the ground, and fourth diode means (D4) having a cathode connected to said second end of the second capacitor and an anode connected to the anode of said second diode means at an output node, said rectification means producing said d.c. current at said output node.
Claim 6
Dependent Claim
99 words
A semiconductor integrated circuit as claimed in claim 1 characterized in that said voltage detection means comprises a constant current source (700) for producing a predetermined current, and a transistor (Q10, Q21) connected between said constant current source and an output terminal of said rectification means (300), said transistor being supplied with a reference voltage (V REF ) and producing said detection signal at a node connected to said constant current source such that said detection signal has a magnitude that is generally proportional to a difference between said voltage level of said direct current and said reference voltage.
Claim 7
Dependent Claim
45 words
A semiconductor integrated circuit as claimed in claim 6 characterized in that said voltage detection means further comprises threshold voltage means (Q11, Q22) connected in series to said transistor for shifting said detection signal by a voltage that is pertinent to said threshold voltage means.
Claim 8
Dependent Claim
31 words
A semiconductor integrated circuit as claimed in claim 6 characterized in that said transistor comprises a MOS transistor (Q10) having a gate connected to the ground for receiving the reference voltage.
Claim 9
Dependent Claim
31 words
A semiconductor integrated circuit as claimed in claim 6 characterized in that said transistor comprises a bipolar transistor (Q21) having a base connected to the ground for receiving the reference voltage.
Claim 10
Dependent Claim
53 words
A semiconductor integrated circuit as claimed in claim 1 characterized in that said control means (600) comprises a transistor (Q3, Q20) supplied with a supply voltage (Vcc) for producing said drive voltage (V1), said transistor being further supplied with said detection signal for modifying said drive voltage in response to said detection signal.
Claim 11
Dependent Claim
33 words
A semiconductor integrated circuit as claimed in claim 10 characterized in that said transistor forming said control means comprises a MOS transistor (Q3) having a gate to which said detection signal is supplied.
Claim 12
Dependent Claim
33 words
A semiconductor integrated circuit as claimed in claim 10 characterized in that said transistor forming said control means comprises a bipolar transistor (Q20) having a base to which said detection signal is supplied.
Claim 13
Dependent Claim
65 words
A semiconductor integrated circuit as claimed in claim 1 characterized in that said voltage detection means comprises a differential amplifier circuit (700A) having first input terminal means (Q27) supplied with said detection signal and second input terminal means (Q28) supplied with a reference signal, said differential amplifier circuit producing a control voltage in correspondence to a difference between said detection signal and said reference signal.
Claim 14
Dependent Claim
44 words
A semiconductor integrated circuit as claimed in claim 13 characterized in that said control means comprises a MOS transistor (Q32) having a source supplied with a predetermined supply voltage, a drain for producing said drive voltage, and a gate supplied with said control voltage.
References Cited (Backward Citations)
No citation records indexed.
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