Patent EP0443586A2 successfully refreshed from Google Patents.
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EP0476701A2
Expired / Lapsed
EP
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A thin-film transistor and a thin film transistor panel using thin-film transistors of this type
Assignee: Casio Computer Co Ltd
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Filing: 1991-09-20
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Granted: —
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Expires: 2011-09-20
Abstract
Abstract A thin-film transistor comprises a gate electrode (112) formed on a glass substrate (101), a gate insulating film (113) formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film (114) placed on the gate insulating film to cover the gate electrode; and a drain electrode (117) and a source electrode (116) spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate elec-trode is made of titanium-containing aluminum. <IMAGE>
Inventors
- 👤 Hisatoshi C/O Pat.Dep.Dev.Div. Hamura R&D Mori
- 👤 Syunichi C/O Pat.Dep.Dev.Div. Hamura R&D Sato
- 👤 Naohiro C/O Pat.Dep.Dev.Div. Hamura R&D Konya
- 👤 Ichiro C/O Pat.Dep.Dev.Div. Hamura R&D Ohno
- 👤 Hiromitsu C/O Pat.Dep.Dev.Div. Hamura R&D Ishii
- 👤 Kunihiro C/O Pat.Dep.Dev.Div. Hamura R&D Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 02:02
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10D86/00; H10D86/40; H10D86/441; H10D86/60
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
129 words
A thin-film transistor which comprises an insulating substrate (101, 201, 401, 501), a non-single-crystal silicon semiconductor film (114, 204, 404, 504) placed above said substrate, an insulating film (113, 203, 403, 503) placed on said semiconductor film, and a pair of first electrodes (116, 117; 206, 207; 407; 506, 507) spaced a specified distance apart in a plane and electrically connected to said semiconductor film so as to form the channel region of the transistor, and a second electrode (112, 202, 402, 502) placed so as to sandwich at least said insulating film between itself and said pair of first electrodes, characterized in that: of said first electrode pair and said second electrode, at least the electrode or electrode pair formed on said substrate is made of titanium-containing aluminum.
Claim 2
Dependent Claim
33 words
A thin-film transistor according to claim 1, characterized in that said electrode or electrode pair on said substrate is made of titanium-containing aluminum with a titanium content of 2.2% or more by weight.
Claim 3
Dependent Claim
53 words
A thin-film transistor according to claim 1, characterized in that said second electrode is formed out of titanium-containing aluminum on said substrate, and said pair of first electrodes is formed above said second electrode so as to sandwich at least said insulating film on said second electrode between itself and said second electrode.
Claim 4
Dependent Claim
58 words
A thin-film transistor according to claim 1, characterized in that said pair of first electrodes are formed out of titanium-containing aluminum on said substrate, and said second electrode is formed above said pair of first electrodes so as to sandwich at least said insulating film on said first electrode pair between itself and said pair of first electrodes.
Claim 5
Dependent Claim
54 words
A thin-film transistor according to claim 3 or 4, characterized in that said insulating film is a silicon nitride film formed in the substrate temperature range of 230 to 270°C; and said electrode or electrode pair on said substrate is made of titanium-containing aluminum with a titanium content of 2.2% or more by weight.
Claim 6
Dependent Claim
54 words
A thin-film transistor according to claim 3 or 4, characterized in that said insulating film is a silicon nitride film formed in the substrate temperature range of 350 to 370°C; and said electrode or electrode pair on the substrate is made of titanium-containing aluminum with a titanium content of 4.2% or more by weight.
Claim 7
Dependent Claim
45 words
A thin-film transistor according to claim 1, characterized in that said insulating film is composed of a metal oxide layer formed by anodizing the surface of said electrode or electrode pair on said substrate and a silicon nitride layer formed on the metal oxide layer.
Claim 8
Dependent Claim
33 words
A thin-film transistor according to any one of preceding claims, characterized by further comprising a blocking layer on said semiconductor film so as to separate said pair of first electrodes from each other.
Claim 9
Dependent Claim
190 words
A thin-film transistor according to claim 1, characterized by further comprising: thin-film transistors arranged in matrix on said substrate; a plurality of control signal lines which are formed so as to extend in the row or column direction and which connect to the second electrodes of said thin-film transistors on a row or column basis to supply control signals to said thin-film transistors; a plurality of data signal lines which are formed so as to extend in the row or column direction and which connect to one of each pair of first electrodes of said thin-film transistors on a row or column basis to supply data signals to said thin-film transistors; and transparent pixel electrodes which are placed on said substrate so as to correspond to said individual thin-film transistors and which connect to the other of each pair of first electrodes so that data signals may be applied to the pixel electrodes via said thin-film transistors; wherein of said control signal lines and data signal lines, at least the lines formed on said substrate are made of titanium-containing aluminum with a titanium content of 2.2% or more by weight.
Claim 10
Dependent Claim
61 words
A thin-film transistor panel according to claim 9, characterized in that said insulating film is composed of a metal oxide layer formed by anodizing the surface of the electrode on said substrate and the surfaces of those connected to the electrode of the control electrode lines and data signal lines and a silicon nitride layer formed on the metal oxide layer.
References Cited (Backward Citations)
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