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EP0476617A2
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Superconductor junction structure and process for fabricating the same
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-09-18
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Granted: —
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Expires: 2011-09-18
Abstract
Abstract The superconductor junction structure according to this invention comprises a first layer and a second layer which are laminated on a substrate, the first layer being formed of a crystal of an oxide superconductor, the second layer being formed of a crystal of the oxide superconductor, a crystallographic axis of the first layer being perpendicular to that of the second layer.
Inventors
- 👤 Saburo C/O Itami Works Tanaka
- 👤 Takashi C/O Itami Works Matsuura
- 👤 Hideo C/O Itami Works Itozaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:53
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/12; H10N60/124; H10N60/01; H10N60/0912; H10N60/0941
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
50 words
A superconductor junction structure comprising; a first layer and a second layer which are formed on a substrate, the first and the second layers being formed of crystals of an oxide superconductor, and a crystallographic axis of the first layer being perpendicular to a crystallographic axis of the second layer.
Claim 2
Dependent Claim
50 words
A superconductor junction structure comprising; a first layer and a second layer which are formed on a substrate, the first and the second layers being formed of crystals of an oxide superconductor, and a crystallographic axis of the first layer being perpendicular to a crystallographic axis of the second layer.
Claim 3
Dependent Claim
38 words
A superconductor junction structure according to claim 1, wherein the first layer on the substrate is formed of an a-crystallographic axis oriented crystal, and the second layer on the substrate is formed of a c-crystallographic axis oriented crystal.
Claim 4
Dependent Claim
38 words
A superconductor junction structure according to claim 1, wherein the first layer on the substrate is formed of a c-crystallographic axis oriented crystal, and the second layer on the substrate is formed of an a-crystallographic axis oriented crystal.
Claim 5
Dependent Claim
17 words
A superconductor junction structure according to claim 1, wherein the substrate is formed of a metal oxide.
Claim 6
Dependent Claim
20 words
A superconductor junction structure according to claim 1, wherein the oxide superconductor is selected from Y-Ba-Cu-0 group or Bi-Sr-Ca-Cu-O group.
Claim 7
Dependent Claim
78 words
A process for fabricating a superconductor junction structure, comprising: the first step of forming a first layer of a crystal of an oxide superconductor on a substrate at a required temperature; and the second step of growing a crystal of the oxide superconductor on the first layer with the substrate set at a temperature different from that of the first step to form a second layer having a crystallographic axis thereof perpendicular to that of the first layer.
Claim 8
Dependent Claim
78 words
A process for fabricating a superconductor junction structure, comprising: the first step of forming a first layer of a crystal of an oxide superconductor on a substrate at a required temperature; and the second step of growing a crystal of the oxide superconductor on the first layer with the substrate set at a temperature different from that of the first step to form a second layer having a crystallographic axis thereof perpendicular to that of the first layer.
Claim 9
Dependent Claim
56 words
A process for fabricating a superconductor junction structure according to claim 6, wherein the first step is for forming the first layer which is a-crystallographic axis oriented, and the second step is for forming the second layer which is c-crystallographic axis-oriented layer with the substrate set at a higher temperature than that of the first step.
Claim 10
Dependent Claim
55 words
A process for fabricating a superconductor junction structure according to claim 6, wherein the first step is for forming the first layer which is c-crystallographic axis oriented, and the second step is for forming the second layer which is a-crystallographic axis-oriented with the substrate set at a lower temperature than that of the first step.
Claim 11
Dependent Claim
52 words
A process for fabricating a superconductor junction structure according to claim 7, wherein the first step is for forming the first layer with the substrate set at 560 to 580 ° C, and the second step is for forming the second layer with the substrate set at 590 to 650 ° C.
Claim 12
Dependent Claim
52 words
A process for fabricating a superconductor junction structure according to claim 9, wherein the first step is for forming the first layer with the substrate set at 590 to 650 ° C, and the second step is for forming the second layer with the substrate set at 560 to 580 ° C.
References Cited (Backward Citations)
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