Abstract A method of fabricating an integrated circuit chip package is provided in which a multi-chip module is formed by mounting a plurality of IC chips (2) on a single silicon circuit board (1) by means of flip-chip interconnection. Compared with a conventional multi-chip module in which, in order to obtain a uniform gap between IC chips and a silicon circuit board, metal bumps (3) provided on both the silicon circuit board (1) and the IC chips (2) are used, such gap is defined in the present method by thicknesses of organic insulating films formed on both the IC chips and the circuit board. That is, height of metal bumps (3) is selected such that it is smaller than a sum of the thicknesses of the insulating films and that closed spaces due to melting of solder for metal bump connection is prevented from being formed between the organic insulating films.
A method of fabricating an integrated circuit chip package forming a multi-chip module including the steps of electrically connecting a plurality of IC chips each having in one surface thereof a plurality of predetermined impurity diffusion regions and in said one surface a plurality of metal bumps connected selectively to said impurity diffusion regions, respectively, to a single, flat silicon circuit board having in at least a portion of its surface a predetermined wiring pattern through said metal bumps by means of flip-chip interconnection, comprising the steps of: forming a first flat film of an organic insulating material on said one surfaces of said IC chips up to a first thickness; forming a plurality of through-holes in said film at predetermined positions and forming said metal bumps through said through-holes; forming a second flat film of an organic insulating material on a surface of said silicon circuit substrate up to a second thickness; forming in said first film a plurality of through-holes each having a wall surface discontinuity in periphery, at positions corresponding to said metal bumps of said IC chips; filling said through-holes with solder metal, respectively; forming at least one of said first film and said second film with adhesive of thermosetting organic insulating material; and heating said silicon circuit board with said metal bumps being mated with said through-holes to melt said solder metal and to thermoset said adhesive.
Claim 2
Dependent Claim
33 words
The method claimed in claim 1, wherein said organic insulating material forming said first film and said second film is thermoset polyimide and said adhesive in said painting step is polyimide before thermosetting.
Claim 3
Dependent Claim
16 words
The method claimed in claim 2, wherein said first film is thinner than said second film.
Claim 4
Dependent Claim
47 words
The method claimed in claim 1 or 2, wherein said step of filling said through-hole with said solder metal comprises a first step of filling said through-holes with relatively high melting point metal and a second step of filling said through-holes with relatively low melting point metal.
Claim 5
Dependent Claim
30 words
The method claimed in claim 1 or 2, wherein a sum of thicknesses of said first film and said second film is larger than a height of said metal bump.
Claim 6
Dependent Claim
50 words
The method claimed in claim 1 or 2, further comprising the step of disposing on surfaces of said IC chips opposite to said one surfaces thereof a heat sink member with a surface of said heat sink member being in intimate contact with said opposite surfaces of said IC chips.
Claim 7
Dependent Claim
23 words
The method claimed in claim 6, further comprising, before the step of disposing, the step of painting said opposite surfaces with thermal grease.
Claim 8
Dependent Claim
50 words
The method claimed in claim 4, wherein the heating step comprises a pre-heating step of melting said low melting point metal and a main heating step of melting said high melting point metal so that, after the pre-heating step completes, said multi-chip module can be checked on electrical connection thereof.
References Cited (Backward Citations)
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