Patent EP0473144A2 successfully refreshed from Google Patents.
EP0473144A2
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EP
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Semiconductor integrated circuit comprising interconnections
Assignee: NEC Corp
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Filing: 1991-08-28
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Granted: —
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Expires: 2011-08-28
Abstract
Abstract A semiconductor integrated circuit comprises large and small signal interconnections. The small signal interconnections are arranged in group structure to take a position which is higher in layer structure than the large signal interconnections. For this structure, shielding electrodes which are necessary in a conventional semiconductor integrated circuit becomes unnecessary. <IMAGE>
Inventors
- 👤 Koichiro Okumura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 19:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/43
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
61 words
In a semiconductor integrated circuit comprising large signal interconnections for a large amplitude signal and small signal interconnections for a small amplitude signal, the improvement is characterized in that said small signal interconnections are arranged in group structure to provide at least one upper interconnection layer which is positioned over said large signal interconnections providing at least one lower interconnection layer.
Claim 2
Dependent Claim
61 words
In a semiconductor integrated circuit comprising large signal interconnections for a large amplitude signal and small signal interconnections for a small amplitude signal, the improvement is characterized in that said small signal interconnections are arranged in group structure to provide at least one upper interconnection layer which is positioned over said large signal interconnections providing at least one lower interconnection layer.
Claim 3
Dependent Claim
43 words
In a semiconductor integrated circuit according to claim 1, interconnection layers are equal to or more than three in number for said large and small signal interconnections; and said small signal interconnections are arranged in group structure to provide an uppermost interconnection layer.
Claim 4
Dependent Claim
45 words
In a semiconductor integrated circuit according to claim 1, interconnection layers are equal to or more than four in number for said large and small signal interconnections; and said small signal interconnections are arranged in group structure to provide uppermost and secondly highest interconnection layer.
Claim 5
Dependent Claim
35 words
In a semiconductor integrated circuit according to claim 1, the improvement further comprises a noise shielding electrode layer including at least one noise shielding electrode to be provided between said upper and lower interconnection layers.
Claim 6
Dependent Claim
37 words
In a semiconductor integrated circuit according to claim 1, said upper and lower interconnection layers are insulated by an insulation layer being larger in thickness than other insulation layers provided in said upper and lower interconnection layers.
Claim 7
Dependent Claim
38 words
In a semiconductor integrated circuit according to claim 1, said upper and lower interconnection layers are insulated by an insulation layer being larger in dielectric constant than other insulation layers provided in said upper and lower interconnection layers.
Claim 8
Dependent Claim
51 words
In a semiconductor integrated circuit according to claim 1, said upper interconnection layer comprises large signal interconnections which are arranged in group structure; and an interval between said group structures for said small and large signal interconnections is larger than an interval between two adjacent interconnections of said small signal interconnections.
Claim 9
Dependent Claim
29 words
In a semiconductor integrated circuit according to claim 7, the improvement further comprises at least one power source line which is provided in said interval between said group structures.
Claim 10
Dependent Claim
52 words
In a semiconductor integrated circuit according to claim 1, said upper interconnection layer comprises at least two small signal interconnection layers which are orthogonal in directions thereof to each other; and said lower interconnection layer comprises at least two large signal interconnection layers which are orthogonal in directions thereof to each other.
References Cited (Backward Citations)
No citation records indexed.
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