Patent EP0471845A1 successfully refreshed from Google Patents.
EP0471845A1
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EP
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Method of forming silicon oxide film
Assignee: Individual
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Filing: 1990-05-07
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Granted: —
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Expires: 2010-05-07
Abstract
Abstract A method of forming an oxide film comprising at least: a first step of forming an oxide film on the surface of a substrate by bringing a solution of oxygen and/or a solution of oxygen-containing molecules into contact with the surface of the substrate on which the oxygen film is to be formed; and a second step of strengthening the bonding of oxygen and the atoms constituting the surface of the substrate in the oxide film by heat-treating the oxide film at a temperature higher than 20 DEG C in a gas phase of oxygen, molecules containing oxygen, or inert gas alone, or a mixture of two or more of them.
Inventors
- 👤 Tadahiro Ohmi
- 👤 Mizuho Morita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P95/00; H10P95/90; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S438/00; Y10S438/903
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
94 words
A method of forming an oxide film comprising; a first step to form an oxide film on the surface of a substrate by bringing a solution containing oxygen and/or oxygen-containig molecule in contact with the surface of said substrate, and a second step to strengthen bond between oxygen and atoms constituting the surface of said substrate in said oxide film by the thermal treatment of said oxide film at a temperature higher than 20 °C in vapor phase of oxygen, oxygen-containing molecule, inert gas alone, or a mixture of two or more of them.
Claim 2
Dependent Claim
23 words
The method according to claim 1, wherein the content of oxygen and/or oxygen-containing molecule dissolved in said solution is more than 0.1 ppm.
Claim 3
Dependent Claim
37 words
The method according to claim 1 or 2, wherein said first step is carried out by bringing said solution in contact with a catalyst to accelerate the decomposition of oxygen and/or oxygen-containing molecule contained in said solution.
Claim 4
Dependent Claim
60 words
The method according to claim 2, wherein said first step is carried out after the dissolved content of oxygen and/or oxygen-containing molecule is increased to more than 0.1 ppm by bringing a solution in which the initial content of oxygen and/or oxygen-containing molecule is less than 0.1 ppm with a catalyst to accelerate the decomposition of oxygen and/or oxygen-containing molecule.
Claim 5
Independent Claim
17 words
The method according to one of claims 1 through 4, wherein said oxygen-containing molecule is hydrogen peroxide.
Claim 6
Independent Claim
21 words
The method according to one of claims 1 through 5, wherein said inert gas is nitrogen, argon or a mixture thereof.
Claim 7
Independent Claim
27 words
The method according to one of claim s 1 through 6, wherein the temperature of the thermal treatment in said second step is lower than 600 °C.
Claim 8
Dependent Claim
25 words
The method according to claim 7, wherein the temperature of the thermal treatment in said second step is a range of 100 through 500 °C.
Claim 9
Independent Claim
29 words
The method according to one of claims 1 through 8, wherein the surface of the substrate on which the oxide film is to be formed is composed of semiconductor.
Claim 10
Dependent Claim
11 words
The method according to claim 9, wherein said semiconductor is silicon.
Claim 11
Independent Claim
32 words
The method according to one of claims 1 through 8, wherein said surface of the substrate on which the oxide film is to be formed is composed of metal or metal alloy.
References Cited (Backward Citations)
No citation records indexed.
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