Patent EP0469605A2 successfully refreshed from Google Patents.
EP0469605A2
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EP
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Process for reducing characteristics degradation of a semiconductor laser
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-08-01
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Granted: —
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Expires: 2011-08-01
Abstract
Abstract There is disclosed a process for reducing degradation of the characteristics of a semiconductor laser by sulfur or selenium-passivating side surfaces of a resonator of a semiconductor laser, and subsequently forming a protection film by ECR-CVD.
Inventors
- 👤 Shinichi c/o Yokohama Works of Sumitomo Shikata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 14:50
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/02; H01S5/028; H01S5/0282
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
29 words
A process for reducing characteristics degradation of a semiconductor laser comprising sulfur-passivating side surfaces of a resonator of said semiconductor laser, and subsequently forming a protection film by ECR-CVD.
Claim 2
Dependent Claim
29 words
A process for reducing characteristics degradation of a semiconductor laser comprising sulfur-passivating side surfaces of a resonator of said semiconductor laser, and subsequently forming a protection film by ECR-CVD.
Claim 3
Dependent Claim
21 words
A process of claim 1, wherein the resonator side surfaces are treated with a phosphoric acid-based etchant prior to the sulfur-passivation.
Claim 4
Dependent Claim
20 words
A process of claim 1 or 2, wherein the semiconductor laser has a double hetero-junction structure of III-V compound semiconductors.
Claim 5
Dependent Claim
14 words
A process of claim 3, wherein the III-V compound semiconductors contain gallium and/or arsenic.
Claim 6
Dependent Claim
25 words
A process of any preceding claim, wherein the sulfur passivation is performed by immersing the resonator side surfaces in an ammonium sulfide excessively containing sulfur.
Claim 7
Dependent Claim
21 words
A process of any preceding claim, wherein the protection film is made of silicon oxide, silicon nitride or silicon nitrogen oxide.
Claim 8
Dependent Claim
29 words
A process for reducing characteristics degradation of a semiconductor laser comprising selenium-passivating side surfaces of a resonator of said semiconductor laser, and subsequently forming a protection film by ECR-CVD.
Claim 9
Dependent Claim
29 words
A process for reducing characteristics degradation of a semiconductor laser comprising selenium-passivating side surfaces of a resonator of said semiconductor laser, and subsequently forming a protection film by ECR-CVD.
Claim 10
Dependent Claim
43 words
A process for reducing characteristics degradation of a semiconductor laser comprising passivating side surfaces of a resonator of said semiconductor laser, with a group VI element, preferably one having similar characteristics as sulfur or selenium, and subsequently forming a protection film by ECR-CVD.
Claim 11
Dependent Claim
43 words
A process for reducing characteristics degradation of a semiconductor laser comprising passivating side surfaces of a resonator of said semiconductor laser, with a group VI element, preferably one having similar characteristics as sulfur or selenium, and subsequently forming a protection film by ECR-CVD.
References Cited (Backward Citations)
No citation records indexed.
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