EP0467390A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Support table for plate-like body and processing apparatus using the table
Assignee: Toshiba Corp
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Filing: 1991-07-19
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Granted: —
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Expires: 2011-07-19
Abstract
Abstract A wafer support table (20) is provided in a vacuum chamber (10) of a magnetron plasma etching apparatus. This support table (20) includes a first member (22) having a mechanism (23, 23a, 23b) for adjusting the temperature of a wafer (1), a second member (21) having an electrostatic chuck (24) for supporting the wafer (1) on its upper surface, and a gas supply mechanism (25, 25a) for supplying a gas between the first and second members (22, 21).
Inventors
- 👤 Toshihisa Nozawa
- 👤 Junichi Arami
- 👤 Isahiro C/O Intellectual Property Div. Hasegawa
- 👤 Haruo c/o Intellectual Property Division Okano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 21:20
CPC Classifications
H; H10; H10P; H10P50/00; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; C; C23; C23C; C23C14/00; C23C14/22; C23C14/50; C23C14/54; C23C14/541; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586; C23C16/50; C23C16/505; C23C16/509; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; H01J37/34; H01J37/3402; H01J37/3405; H01J37/3408; H01J37/3411; H01J37/3435; H10P72/70; H10P72/78; H01J2237/00; H01J2237/20; H01J2237/2001; H01J2237/2007; H01J2237/32; H01J2237/33; H01J2237/334
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
112 words
A processing apparatus for performing predetermined processing for an object (1) to be processed in a vacuum atmosphere, comprising: a vacuum chamber (10) held at a predetermined vacuum degree; a support table (20) provided in said vacuum chamber (10) and having a first member (22) having a mechanism (23, 23a, 23b) for adjusting a temperature of said object (1) to be processed, a second member (21), for supporting said object (1), provided in contact with said first member (22), and gas supply means (25, 25a, 60) for supplying a gas between said first and second members; and processing means (20, 30, 40) for performing arbitrary processing for said object to be processed.
Claim 2
Dependent Claim
112 words
A processing apparatus for performing predetermined processing for an object (1) to be processed in a vacuum atmosphere, comprising: a vacuum chamber (10) held at a predetermined vacuum degree; a support table (20) provided in said vacuum chamber (10) and having a first member (22) having a mechanism (23, 23a, 23b) for adjusting a temperature of said object (1) to be processed, a second member (21), for supporting said object (1), provided in contact with said first member (22), and gas supply means (25, 25a, 60) for supplying a gas between said first and second members; and processing means (20, 30, 40) for performing arbitrary processing for said object to be processed.
Claim 3
Dependent Claim
29 words
An apparatus according to claim 1, characterized in that said processing means (20, 30, 40) includes plasma generating means (20, 40) and performs predetermined processing by a generated plasma.
Claim 4
Dependent Claim
25 words
An apparatus according to claim 1, characterized in that said second member (21) includes an electrostatic chuck (24) for holding said object by Coulomb force.
Claim 5
Dependent Claim
27 words
An apparatus according to claim 3, further comprising gas supply means (27) for supplying a heat conduction gas between said electrostatic chuck (24) and said object (1).
Claim 6
Dependent Claim
126 words
A plasma etching apparatus for dry-etching a semiconductor wafer (1), comprising: a vacuum chamber (10) held at a predetermined vacuum degree; a support table (20) provided in said vacuum chamber (10) and having a first member (22) having a mechanism (23, 23a, 23b) for adjusting a temperature of said semiconductor wafer (1), a second member (21), for supporting said semiconductor wafer (1), provided in contact with said first member (22), and gas supply means (25, 25a, 60) for supplying a gas between said first and second members (22, 21 ); plasma generating means (20, 40) for generating a plasma of an etching gas around said wafer (1); and magnetic field applying means (30) for applying a magnetic field to a region where the plasma is generated.
Claim 7
Dependent Claim
126 words
A plasma etching apparatus for dry-etching a semiconductor wafer (1), comprising: a vacuum chamber (10) held at a predetermined vacuum degree; a support table (20) provided in said vacuum chamber (10) and having a first member (22) having a mechanism (23, 23a, 23b) for adjusting a temperature of said semiconductor wafer (1), a second member (21), for supporting said semiconductor wafer (1), provided in contact with said first member (22), and gas supply means (25, 25a, 60) for supplying a gas between said first and second members (22, 21 ); plasma generating means (20, 40) for generating a plasma of an etching gas around said wafer (1); and magnetic field applying means (30) for applying a magnetic field to a region where the plasma is generated.
Claim 8
Dependent Claim
62 words
A support table for supporting a plate-like body, comprising: a first member (22) having a mechanism (23, 23a, 23b) for adjusting a temperature of said plate-like body; a second member (21), for supporting said plate-like body, provided in contact with said first member (22); and gas supply means (25, 25a) for supplying a gas between said first and second members (22, 21).
Claim 9
Dependent Claim
62 words
A support table for supporting a plate-like body, comprising: a first member (22) having a mechanism (23, 23a, 23b) for adjusting a temperature of said plate-like body; a second member (21), for supporting said plate-like body, provided in contact with said first member (22); and gas supply means (25, 25a) for supplying a gas between said first and second members (22, 21).
Claim 10
Dependent Claim
26 words
A table according to claim 6, characterized in that said second member (21) includes an electrostatic chuck (24) for holding said body by a Coulomb force.
Claim 11
Dependent Claim
28 words
A table according to claim 6, characterized in that said first member (22) is fixed to said vacuum apparatus, and said second member (21) can be removed therefrom.
Claim 12
Dependent Claim
36 words
A table according to claim 6, characterized in that said gas supply means (25, 25a, 60) includes a gas inlet passage (25) for supplying the heat conduction gas between said first and second members (22, 21).
Claim 13
Dependent Claim
34 words
A table according to claim 9, characterized in that said gas supply means (25, 25a, 60) has a gas pressure control mechanism (60) for controlling a gas pressure between said first and second members.
Claim 14
Dependent Claim
31 words
A table according to claim 6, characterized in that the heat conduction gas is one member selected from the group consisting of He, 0 2 , Ar, and N 2 .
Claim 15
Dependent Claim
30 words
A table according to claim 6, characterized in that said mechanism (23, 23a, 23b) for adjusting a temperature includes a temperature adjusting liquid passage (23) formed in said first member.
Claim 16
Dependent Claim
31 words
A table according to claim 6, characterized in that said mechanism (23, 23a, 23b) for adjusting a temperature includes a mechanism (23, 23a, 23b) for cooling said object to be processed.
Claim 17
Dependent Claim
31 words
A table according to claim 6, characterized in that said mechanism (23, 23a, 23b) for adjusting a temperature includes a mechanism (23, 23a, 23b) for heating said object to be processed.
Claim 18
Dependent Claim
27 words
A table according to claim 7, further comprising gas supply means (27) for supplying a heat conduction gas between said electrostatic check (24) and said body (1).
Claim 19
Dependent Claim
57 words
An electrode (20) used in a vacuum atmosphere comprising: a first member (22) having a mechanism (23, 23a, 23b) for adjusting a temperature of said electrode (20); a second member (21) removably set in contact with said first member (22); and gas supply means (25, 25a, 60) for supplying a gas between said first and second members.
Claim 20
Dependent Claim
57 words
An electrode (20) used in a vacuum atmosphere comprising: a first member (22) having a mechanism (23, 23a, 23b) for adjusting a temperature of said electrode (20); a second member (21) removably set in contact with said first member (22); and gas supply means (25, 25a, 60) for supplying a gas between said first and second members.
References Cited (Backward Citations)
JPS59115521A
Cited
JPS6179769A
Cited
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