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JPS6179769A Expired / Lapsed JP ⏱️ 0.0 years remaining

Control device of wafer temperature

Assignee: NEC Corp
•
Filing: 1984-09-28
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Granted: —
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Expires: 2004-09-28
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Abstract

Abstract PURPOSE:To control the temp. of a semiconductor wafer to an optimum temp. in the stage of forming a thin film by sputtering onto the surface of the wafer by providing a metallic contact plate in proximity to the wafer and heating and cooling the block body of the wafer with the temp. thereof. CONSTITUTION:The heating and cooling block 6 is provided in proximity to the semiconductor wafer 1 and a heater 3 for heating and a cooling mechanism 8 are installed therein in the stage of depositing a compd., etc. by a sputtering method on the wafer 1. The wafer contact plate 7 is provided in proximity to the wafer 1 in front of the body 6 and a recess 6a is formed between the contact plate and the block body 6. The temp. of the wafer 1 is measured with a thermocouple 4 attached to the plate 7 and the output thereof is inputted to a controller 9 in the stage of sputtering the compd., etc. to the wafer 1. The controller 9 commands the heating mechanism 3 or the cooling mechanism 8 to operate either thereof, thereby heating or cooling the gas such as Ar passing through feed and discharge passages. The wafer 1 is thus controlled to the optimum temp. through the recess 6a via the plate 7.

Inventors

  • 👤 Hiroshi Aoyama
  • 👤 弘 青山

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-02 22:10
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/50; C23C14/54; C23C14/541

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