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EP0466191A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Domain structured optical device and method for manufacturing the same

Assignee: Sony Corp
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Filing: 1991-07-12
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Granted: —
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Expires: 2011-07-12
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Abstract

Abstract An optical device (10) having a periodic inverted domain construction is used for second harmonic generating devices or the like. The optical device comprises a ferroelectric crystal substrate (1) which is provided in this surface with a periodic inverted domain structure (3) consisting of a plurality of parallel inverted domain regions (3A) arranged at intervals. The thickness t and width w of the inverted domain regions and the thickness T of the ferroelectric crysal substrate meet the criteria expressed by: t/w ≧ 1 and 0.1 < t/T ≦ 1. The periodic inverted domain structure is obtained by exposing the surface of the ferroelectric crystal substrate to a beam of charged particles.

Inventors

  • 👤 Masahiro C/O Sony Corporation Yamada
  • 👤 Koichiro c/o Sony Corporation Kishima
  • 👤 Ayumu c/o Sony Corporation Taguchi

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 17:37
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/35; G02F1/37; G02F1/377; G02F1/3775; G02F1/355; G02F1/3558; G02F1/353; G02F1/3544; G02F1/3548; G02F2202/00; G02F2202/20

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 53 words
An optical device (10) comprising: a ferroelectric crystal substrate (1) which is provided in its surface with a periodic inverted domain structure (3) having a plurality of inverted domain regions (3A); characterized in that the thickness t and width w of the inverted domain regions meet a criteria expressed by: t/w ≧ 1.
Claim 2
Dependent Claim 57 words
An optical device comprising: a ferroelectric crystal substrate which is provided in its surface with a periodic inverted domain structure having a plurality of inverted domain regions; characterized in that the thickness T of the ferroelectric crystal substrate and the thickness t of the inverted domain regions meet a criteria expressed by: 0.1 < t/T ≦ 1.
Claim 3
Independent Claim 91 words
A method of fabricating an optical device comprising a ferroelectric crystal substrate which is provided in its surface with a period inverted domain structure, said method comprising the steps of, aligning the respective c-axes of domains of the ferroelectric crystal substrate with a first direction; and exposing the surface of the ferroelectric crystal substrate to a beam of charged particles by applying an accelerating voltage of 10 kV or higher for unit thickness in millimeters of the ferroelectric crystal substrate to the charged particles to form said periodic inverted domain structure.
Claim 4
Independent Claim 83 words
A method of fabricating an optical device comprising a ferroelectric crystal substrate which is provided in its surface with a periodic inverted domain structure, said method comprising the steps of: aligning the respective c-axes of domains of the ferroelectric crystal substrate with a first direction; and exposing the surface of the ferroelectric crystal substrate to a beam of charged particles by using a current of an irradiation current density of 1 µA/mm² or higher so as to form said periodic inverted domain structure.
Claim 5
Dependent Claim 41 words
An optical device according to claim 1 wherein said periodic inverted domain structure comprises an optical waveguide in which the thickness t of the inverted regions is substantially the same or greater than the thickness T wg of said optical waveguide.
Claim 6
Dependent Claim 18 words
A method of claim 3 or claim 4 wherein said substrate is a single crystal of lithium niobate.
Claim 7
Independent Claim 74 words
A method of fabricating an optical device comprising a ferroelectric crystal substrate which is provided with a periodic inverted domain structure, said method comprising the steps of, aligning the respective c-axes of domains of the ferroelectric substrate in a first direction, applying a plurality of parallel conductive strips on a surface of said substrate, and exposing said surface of said substrate to a beam of charged particles to form a periodic inverted domain structure.
Claim 8
Independent Claim 74 words
A method of fabricating an optical device comprising a ferroelectric crystal substrate which is provided with a periodic inverted domain structure, said method comprising the steps of, aligning the respective c-axes of domains of the feroelectric substrate in a first direction, applying a plurality of parallel insulating strips on a surface of said substrate, and exposing said surface of said substrate to a beam of charged particles to form a periodic inverted domain structure.
Claim 9
Independent Claim 83 words
A method of fabricating an optical device comprising a ferroelectric crystal substrate which is provided with a periodic inverted domain structure, said method comprising the steps of, aligning the respective c-axes of domains of the ferroelectric substrate in a first direction, applying a plurality of parallel conductive strips on a back surface of said substrate or on a side surface of said substrate, and exposing said surface of said substrate to a beam of charged particles to form a periodic inverted domain structure.
Claim 10
Independent Claim 60 words
A method of fabricating an optical device comprising a ferroelectric crystal substrate which is provided with a periodic inverted domain structure, said method comprising the steps of, aligning the respective c-axes of domains of the ferroelectric substrate in a first direction, and irradiating a surface of said substrate with a beam of charged particles in a pattern of parallel strips.
Claim 11
Independent Claim 94 words
A method of fabricating an optical device comprising a ferroelectric crystal substrate which is provided with a periodic inverted domain structure, said method comprising the steps of, aligning the respective c-axes of domains of the ferroelectric substrate in a first direction, forming a plurality of parallel insulating strips on a back surface of said substrate, forming a conductive film over said plurality of parallel insulating strips and said back surface of said substrate, and exposing the front surface of said substrate to a beam of charged particles to form a periodic inverted domain structure.
Claim 12
Independent Claim 94 words
A method of fabricating an optical device comprising a ferroelectric crystal substrate which is provided with a periodic inverted domain structure, said method comprising the steps of, aligning the respective c-axes of domains of the ferroelectric substrate i na first direction, forming a plurality of parallel insulating strips on a back surface of said substrate, forming a conductive film over said plurality of parallel insulating strips and said back surface of said substrate, and exposing the front surface of said substrate to a beam of charged particles to form a periodic inverted domain structure.
Claim 13
Independent Claim 81 words
A method of fabricating an optical device comprising a ferroelectric crystal substrate which is provided with a periodic inverted domain structure, said method comprising the steps of, aligning the respective c-axes of domains of the ferroelectric substrate in a first direction, forming a plurality of parallel conductive strips on an insulating substrate, placing said crystal substrate on said insulating substrate, and exposing the front surface of said substrate to a beam of charged particles to form a periodic inverted domain structure.
Claim 14
Dependent Claim 18 words
A method of claim 10 wherein a conductive film is formed on the back surface of said substrate.
Claim 15
Dependent Claim 39 words
A method of claim 7, 8, 9, 10, 11, 12, 13 or 14 wherein said beam of charged particles is applied an accelerating voltage of 10 kV or higher for unit thickness in millimeters of the ferroelectric crystal substrate.
Claim 16
Dependent Claim 32 words
A method of claim 7, 8, 9, 10, 11, 12, 13 or 14 wherein said beam of charged particles uses a current of an irradiation current density of 1 µA/mm² or higher.

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