Patterning method using an inorganic masking layer

Abstract

Abstract A patterning method which comprises forming a photosensitive inorganic semiconductor layer on a semiconductor substrate and irradiating the photosensitive inorganic semiconductor layer which is kept in contact with an electrolyte with light of energy greater than the band gap of the semiconductor layer. Thus, a portion of the semiconductor layer which has been exposed or unexposed to light is dissolved into the electrolyte, thereby producing a desired pattern on the substrate. <IMAGE>

Inventors

• 👤 Shigeo Kondo

Bibliographic Details