EP0464843A2
Expired / Lapsed
EP
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Patterning method using an inorganic masking layer
Assignee: Panasonic Holdings Corp
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Filing: 1991-07-05
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Granted: —
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Expires: 2011-07-05
Abstract
Abstract A patterning method which comprises forming a photosensitive inorganic semiconductor layer on a semiconductor substrate and irradiating the photosensitive inorganic semiconductor layer which is kept in contact with an electrolyte with light of energy greater than the band gap of the semiconductor layer. Thus, a portion of the semiconductor layer which has been exposed or unexposed to light is dissolved into the electrolyte, thereby producing a desired pattern on the substrate. <IMAGE>
Inventors
- 👤 Shigeo Kondo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:45
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; H10P50/60; H10P50/61; H10P50/613; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
51 words
A patterning method comprising the steps of: forming a photosensitive inorganic semiconductor layer on a semiconductor substrate; and irradiating the photosensitive inorganic semiconductor layer which is kept in contact with an electrolyte with light having energy greater than the band gap of the photosensitive inorganic semiconductor layer to form a pattern.
Claim 2
Dependent Claim
16 words
A patterning method according to claim 1, wherein the electrolyte is an electroless plating catalytic solution.
Claim 3
Dependent Claim
14 words
A patterning method according to claim 1, wherein the electrolyte is a polymer electrolyte.
Claim 4
Dependent Claim
14 words
A patterning method according to claim 1, wherein the pattern is an etching pattern.
Claim 5
Dependent Claim
14 words
A patterning method according to claim 1, wherein the pattern is a wiring pattern.
References Cited (Backward Citations)
No citation records indexed.
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