Patent EP0461877A2 successfully refreshed from Google Patents.
EP0461877A2
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EP
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Structure for preventing electric field concentration in semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1991-06-12
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Granted: —
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Expires: 2011-06-12
Abstract
Abstract Conductive plates (16a - 16e), or floating semiconductor regions (17a - 17d), or conductive plates (16a, 16c, 16e) and floating semiconductor regions (17a, 17d) are disposed in alignment so that a coupling capacitance between the conductive plates and/or the floating semiconductor regions which are adjacent to each other descrease as a distance from a first or second semiconductor region (12, 13) increases. Therefore, the respective potentials at the conductive plates or the floating semiconductor regions can be varied linearly (or at equal potential differences), and corresponding potential distribution can be achieved on the surface of a semiconductor substrate (11). As a result, electric field concentration on the surface of the semiconductor substrate (11) just under a high potential conductive layer (14) can be prevented effectively even by the use of an insulating layer (15) with a common thickness.
Inventors
- 👤 Tomohide c/o Mitsubishi Denki K.K. Terashima
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 09:56
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D64/112; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/106
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
146 words
A structure for preventing electric field concentration in a semiconductor device, comprising: a first conductive type semiconductor layer; a second conductive type first semiconductor region formed on the surface of said semiconductor layer; a first conductive type second semiconductor region formed on the surface of said semiconductor layer in isolation from said first semiconductor region; a conductive layer in contact with the surface of said second semiconductor region, provided extendedly over said first semiconductor region; an insulating layer formed between said conductive layer and said semiconductor layer as well as said first semiconductor region; and a plurality of conductive plates disposed in alignment from a position facing to said first semiconductor region toward said second semiconductor region in said insulating layer just under said conductive layer so that a coupling capacitance between adjacent said conductive plates decreases as a distance from said first semiconductor region increases.
Claim 2
Dependent Claim
39 words
A structure in accordance with claim 1, wherein edge portions of adjacent said conductive plates are overlapped each other at a distance in a manner that an overlapping area decrease as the distance from said first semiconductor region increases.
Claim 3
Dependent Claim
23 words
A structure in accordance with claim 2, wherein sizes of said conductive plates decrease as the distance from said first semiconductor region increases.
Claim 4
Dependent Claim
26 words
A structure in accordance with claim 2, wherein an overlapping width of adjacent said conductive plates descrease as the distance from said first semiconductor region increases.
Claim 5
Dependent Claim
27 words
A structure in accordance with claim 1, wherein nearest one of said conductive plates to said first semiconductor region is electrically connected with said first semiconductor region.
Claim 6
Dependent Claim
153 words
A structure for preventing electric field concentration in a semiconductor device, comprising: a first conductive type semiconductor layer; a second conductive type first semiconductor region formed on the surface of said semiconductor layer; a first conductive type second semiconductor region formed on the surface of said semiconductor layer in isolation from said first semiconductor region; a conductive layer in contact with the surface of said second semiconductor region, provided extendedly over said first semiconductor region; an insulating layer formed between said conductive layer and said semiconductor layer as well as said first semiconductor region; and a plurality of second conductive type floating semiconductor regions disposed in alignment from the vicinity of said first semiconductor region toward said second semiconductor region on the surface of said semiconductor layer just under said conductive layer so that a coupling capacitance between adjacent said floating semiconductor regions decreases as a distance from said first semiconductor region increases.
Claim 7
Dependent Claim
24 words
A structure in accordance with claim 6, wherein sizes of said floating semiconductor regions decrease as the distance from said first semiconductor region increases.
Claim 8
Dependent Claim
185 words
A structure for preventing electric field concentration in a semiconductor device, comprising: a first conductive type semiconductor layer; a second conductive type first semiconductor region formed on the surface of said semiconductor layer; a first conductive type second semiconductor region formed on the surface of said semiconductor layer in isolation from said first semiconductor region; a conductive layer in contact with the surface of said second semiconductor region, provided extendedly over said first semiconductor region; an insulating layer formed between said conductive layer and said semiconductor layer as well as said first semiconductor region; at least one conductive plate formed in said insulating layer just under said conductive layer; and at least one second conductive type floating semiconductor region formed in said semiconductor layer just under said conductive layer, said conductive plate and said floating semiconductor region being disposed in alignment alternately from the vicinity of said first semiconductor region toward said second semiconductor region so that a coupling capacitance between said conductive layer and said floating semiconductor region which are adjacent to each other decreases as a distance from said first semiconductor region increases.
Claim 9
Dependent Claim
44 words
A structure in accordance with claim 8, wherein edge portions of adjacent said conductive plate and said floating semiconductor region are overlapped each other at a distance in a manner that an overlapping area decrease as the distance from said first semiconductor region increases.
Claim 10
Dependent Claim
28 words
A structure in accordance with claim 9, wherein sizes of said conductive plate and said floating semiconductor region decrease as the distance from said first semiconductor region increases.
Claim 11
Dependent Claim
31 words
A structure in accordance with claim 9, wherein an overlapping width of adjacent said conductive plate and said floating semiconductor region descrease as the distance from said first semiconductor region increases.
Claim 12
Dependent Claim
27 words
A structure in accordance with claim 8, wherein nearest one of said conductive plates to said first semiconductor region is electrically connected with said first semiconductor region.
Claim 13
Dependent Claim
146 words
A structure for preventing electric field concentration in a semiconductor device, comprising: a first conductive type semiconductor layer; a second conductive type first semiconductor region formed on the surface of said semiconductor layer; a first conductive type second semiconductor region formed on the surface of said semiconductor layer in isolation from said first semiconductor region; a conductive layer in contact with the surface of said first semiconductor region, provided extendedly over said second semiconductor region; an insulating layer formed between said conductive layer and said semiconductor layer as well as said second semiconductor region; and a plurality of conductive plates disposed in alignment from a position facing to said second semiconductor region toward said first semiconductor region in said insulating layer just under said conductive layer so that a coupling capacitance between adjacent said conductive plates decreases as a distance from said second semiconductor region increases.
Claim 14
Dependent Claim
39 words
A structure in accordance with claim 13, wherein edge portions of adjacent said conductive plates are overlapped each other at a distance in a manner that an overlapping area decrease as the distance from said second semiconductor region increases.
Claim 15
Dependent Claim
23 words
A structure in accordance with claim 14, wherein sizes of said conductive plates decrease as the distance from said second semiconductor region increases.
Claim 16
Dependent Claim
26 words
A structure in accordance with claim 14, wherein an overlapping width of adjacent said conductive plates descrease as the distance from said second semiconductor region increases.
Claim 17
Dependent Claim
26 words
A structure in accordance with claim 13, wherein nearest one of said conductive plates to said second semiconductor region is electrically connected with second semiconductor region.
Claim 18
Dependent Claim
153 words
A structure for preventing electric field concentration in a semiconductor device, comprising: a first conductive type semiconductor layer; a second conductive type first semiconductor region formed on the surface of said semiconductor layer; a first conductive type second semiconductor region formed on the surface of said semiconductor layer in isolation from said first semiconductor region; a conductive layer in contact with the surface of said first semiconductor region, provided extendedly over said second semiconductor region; an insulating layer formed between said conductive layer and said semiconductor layer as well as said second semiconductor region; and a plurality of second conductive type floating semiconductor regions disposed in alignment from the vicinity of said second semiconductor region toward said first semiconductor region on the surface of said semiconductor layer just under said conductive layer so that a coupling capacitance between adjacent said floating semiconductor regions decreases as a distance from said second semiconductor region increases.
Claim 19
Dependent Claim
24 words
A structure in accordance with claim 18, wherein sizes of said floating semiconductor regions decrease as the distance from said second semiconductor region increases.
Claim 20
Dependent Claim
185 words
A structure for preventing electric field concentration in a semiconductor device, comprising: a first conductive type semiconductor layer; a second conductive type first semiconductor region formed on the surface of said semiconductor layer; a first conductive type second semiconductor region formed on the surface of said semiconductor layer in isolation from said first semiconductor region; a conductive layer in contact with the surface of said first semiconductor region, provided extendedly over said second semiconductor region; an insulating layer formed between said conductive layer and said semiconductor layer as well as said second semiconductor region; at least one conductive plate formed in said insulating layer just under said conductive layer; and at least one second conductive type floating semiconductor region formed in said semiconductor layer just under said conductive layer, said conductive plate and said floating semiconductor region being disposed in alignment alternately from the vicinity of said second semiconductor region toward said first semiconductor region so that a coupling capacitance between said conductive layer and said floating semiconductor region which are adjacent to each other decreases as a distance from said second semiconductor region increases.
Claim 21
Dependent Claim
44 words
A structure in accordance with claim 20, wherein edge portions of adjacent said conductive plate and said floating semiconductor region are overlapped each other at a distance in a manner that an overlapping area decrease as the distance from said second semiconductor region increases.
Claim 22
Dependent Claim
28 words
A structure in accordance with claim 21, wherein sizes of said conductive plate and said floating semiconductor region decrease as the distance from said second semiconductor region increases.
Claim 23
Dependent Claim
31 words
A structure in accordance with claim 21, wherein an overlapping width of adjacent said conductive plate and said floating semiconductor region descrease as the distance from said second semiconductor region increases.
Claim 24
Dependent Claim
27 words
A structure in accordance with claim 20, wherein nearest one of said conductive plates to said first semiconductor region is electrically connected with said second semiconductor region.
References Cited (Backward Citations)
No citation records indexed.
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