Patent EP0459905A2 successfully refreshed from Google Patents.
EP0459905A2
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Process for preparing high-temperature superconducting thin films
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-05-30
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Granted: —
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Expires: 2011-05-30
Abstract
Abstract Improvement in a process for preparing a-axis oriented thin film of high-Tc oxide superconducting material by laser evaporation method. Before the a-axis oriented thin film of oxide superconducting material is deposited by laser evaporation method, an under-layer having an a-axis orientation of the crystal of the same oxide superconducting material is deposited on a substrate previously by sputtering.
Inventors
- 👤 Saburo C/O Itami Works Tanaka
- 👤 Hidenori C/O Itami Works Nakanishi
- 👤 Hideo C/O Itami Works Itozaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:56
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/731; Y10S505/732
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
103 words
A process for preparing a-axis oriented thin film of oxide superconducting material possessing improved crystallinity and electrical properties by laser evaporation method, characterized in that an under-layer of the oxide superconducting material having an a-axis orientation of crystal is deposited firstly on a substrate by any deposition technique other than laser evaporation method under such a deposition condition as is suitable to realize the a-axis oriented thin film, and then an upper layer of the same oxide superconducting material is secondly deposited on the resulting under-layer by laser evaporation method under another deposition condition which is most suitable for the laser evaporation method.
Claim 2
Dependent Claim
21 words
The process set forth in Claim 1 wherein said upper-layer is produced to have a thickness of more than 100 Å.
Claim 3
Dependent Claim
23 words
The process set forth in Claim 1 or 2 wherein said under-layer is deposited up to a thickness of 20 to 1,000 Å.
Claim 4
Dependent Claim
15 words
The process set forth in Claim 3 wherein said under-layer is produced by sputtering method.
Claim 5
Dependent Claim
14 words
The process set forth in Claim 4 wherein said sputtering method is RF sputtering.
Claim 6
Dependent Claim
22 words
The process set forth in any one of Claim 1 to 5 wherein said substrate is a single crystal substrate of oxide.
Claim 7
Dependent Claim
31 words
The process set forth in Claim 6 wherein said substrate is a single crystal substrate of oxide selected from the group comprising MgO, SrTiO₃, LaAlO₃, LaGaO₃ and yttrium stabilized zirconia (YSZ).
Claim 8
Dependent Claim
26 words
The process set forth in any one of Claim 1 to 7 wherein said oxide superconducting material is compound oxides of Y-Ba-Cu-O system or Bi-Sr-Ca-Cu-O system.
Claim 9
Dependent Claim
99 words
The process set forth in any one of Claim 1 to 8 wherein said under-layer of the oxide superconducting material is deposited under such a condition that said substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of said oxide superconducting material in a first step followed by a second step in which said upper-layer of the oxide superconducting material is deposited under such a condition that said substrate is heated at a temperature which is higher by 10 to 100 °C than said temperature which is used in the first step.
Claim 10
Dependent Claim
52 words
The process set forth in Claim 8 wherein said upper-layer of the oxide superconducting material is deposited under such a condition that said substrate is heated to a temperature corresponding to a temperature at which c-axis oriented thin film is prepared when the same thin film is deposited directly on said substrate.
References Cited (Backward Citations)
No citation records indexed.
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