Patent US4359409A successfully refreshed from Google Patents.
Patent EP0458570A1 successfully refreshed from Google Patents.
EP0458570A1
Expired / Lapsed
EP
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Diode and semiconductor device having such a diode
Assignee: Canon Inc
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Filing: 1991-05-20
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Granted: —
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Expires: 2011-05-20
Abstract
Abstract A diode in which a first semiconductor region of one conductivity type and a second semiconductor region of a conductivity type opposite to that of the first semiconductor region are joined through an intrinsic semiconductor region or a low concentration impurity semiconductor region. The diode has a control electrode provided over the intrinsic semiconductor region or the low concentration impurity semiconductor region through an insulative film.
Inventors
- 👤 Hidemasa C/O Canon Kabushiki Kaisha Mizutani
- 👤 Toru C/O Canon Kabushiki Kaisha Koizumi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 22:44
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/811; H10D12/00; H10D12/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
67 words
A diode in which a first semiconductor region of one conductivity type and a second semiconductor region of a conductivity type opposite to that of the first semiconductor region are joined through an intrinsic semiconductor region or a low concentration impurity semiconductor region, wherein said diode has a control electrode provided over the intrinsic semiconductor region or the low concentration impurity semiconductor region through an insulative film.
Claim 2
Dependent Claim
30 words
A diode according to claim 1, wherein impurities which can control the conductivity type are contained in the first semiconductor region and the second semiconductor region at a high concentration.
Claim 3
Dependent Claim
36 words
A diode according to claim 1, wherein the intrinsic semiconductor region or the low concentration impurity region, the first semiconductor region, and the second semiconductor region are formed in a semiconductor layer on an insulative substrate.
Claim 4
Dependent Claim
30 words
A diode according to claim 1, wherein the first and second semiconductor regions contain impurities which control the conductivity type at a concentration of 1 x 10¹⁹ cm⁻³ or more.
Claim 5
Dependent Claim
26 words
A diode according to claim 4, wherein the impurities which control the conductivity type are selected from the III and V groups of a periodic table.
Claim 6
Dependent Claim
32 words
A diode according to claim 1, wherein the first semiconductor region, the second semiconductor region, and the intrinsic or low concentration semiconductor region are made of semiconductors formed on an insulative substrate.
Claim 7
Dependent Claim
12 words
A diode according to claim 6, wherein said semiconductor is monocrystalline silicon.
Claim 8
Dependent Claim
10 words
A semiconductor device including a diode according to claim 1.
Claim 9
Dependent Claim
3 words
A gate-controlled diode.
Claim 10
Dependent Claim
27 words
A semiconductor device comprising an n-type region and a p-type region arranged to provide a depletion region, and a gate means arranged to influence the depletion region.
References Cited (Backward Citations)
US4037140A
Cited
FR2490874A1
Cited
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