Thin-film-transistor having Schottky barrier

Claim 2

The semiconductor device as claimed in claim 1, wherein both of said source and drain are made of said metal silicide film to form the Schottoky barrier with said substrate area.

Claim 3

The semiconductor device as claimed in claim 1, wherein said thin-film-transistor further comprises an impurity region forming a PN junction with said substrate region and additional metal silicide layer having an ohmic contact with said impurity region, at least one of said source and drain forming the Schottoky barrier with said substrate area and the other of said source and drain including said impurity region to form the PN junction with said substrate area.

Claim 4

The semiconductor device as claimed in claim 2, wherein said Schottoky barrier reaches said insulating layer.

Claim 5

The semiconductor device as claimed in claim 3, wherein both of said Schottoky barrier and said PN junction reach said insulating layer.

Claim 6

A semiconductor device having a thin-film-transistor and an insulated gate transistor on a single semiconductor substrate, said thin-film-transistor comprising a silicon film formed on an insulating layer covering said semiconductor substrate, at least one portion of said silicon film serving as a substrate area, a gate provided to form a channel in said substrate area, a source consisting of a first silicide film forming a Schottoky barrier with said substrate area, and a drain including a second silicide film, and said insulated gate transistor comprising impurity regions serving as source and drain and selectively formed in said semiconductor substrate and a gate formed on a gate insulating film covering a part of said semiconductor substrate between said impurity regions, said second silicide film being elongated to connect to said impurity region with an ohmic contact.

Claim 7

The semiconductor device as claimed in claim 6, said second silicide film forms a Schottoky barrier with said substrate area so that said drain of said thin-film-transistor is defined by said Schottoky barrier.

Claim 8

The semiconductor device as claimed in claim 6, wherein said drain of said thin-film-transistor further includes a semiconductor region forming a PN junction with said substrate area, said second silicide being in ohmic contact with said semiconductor region.

Claim 9

A semiconductor device including an insulated gate transistor and a thin-film-transistor on a semiconductor substrate, said insulated gate transistor comprising source and drain regions selectively formed in said semiconductor substrate and a gate electrode formed on a first gate insulating film covering a portion of said semiconductor substrate between said source and drain regions, said thin-film-transistor comprising a silicon film formed on a second gate insulating film covering said gate electrode, said silicon film forming a channel therein under control of said gate electrode, a source consisting of a first silicide film forming a Schottoky barrier with said silicon film, and a drain including a second silicide film, said second silicide film being elongated to be in ohmic contact with said drain region of said insulated gate transistor.

Claim 10

The semiconductor device as claimed in claim 9, wherein said second silicide film forming a Schottoky barrier with said silicon film so that said drain is defined by said Schottoky barrier.

Claim 11

The semiconductor device as claimed in claim 9, wherein said drain of said thin-film-transistor further includes an impurity region forming a PN junction with said silicon film, said second silicide film being in ohmic contact with said impurity region.