Method for manufacturing three-dimensional semiconductor device

Claim 1

A method for manufacturing a three-dimensional semiconductor device comprising the steps of: forming a polycrystalline or amorphous semiconductor layer (3) on an insulating film (2) having an opening at a predetermined position of a first element (Tl) covered on a single-crystalline semiconductor substrate (1) having the first element (Tl); irradiating an energy beam to said semiconductor layer (3) to grow a single crystal in a predetermined region in said semiconductor layer (3) using as a seed crystal that part of the semiconductor substrate (1) which contacts with said semiconductor layer (3); and forming a second element (T2) on the grown single-crystalline semiconductor region (3') and forming an interconnection between the first and second elements (Tl, T2) by using a part of the single-crystalline semiconductor region (3') from said semiconductor substrate (1) to said second element (T2).

Claim 2

A method for manufacturing a three-dimensional semiconductor device comprising the steps of: forming a polycrystalline or amorphous semiconductor layer (3) on an insulating film (2) having an opening at a predetermined position of a first element (Tl) covered on a single-crystalline semiconductor substrate (1) having the first element (Tl); irradiating an energy beam to said semiconductor layer (3) to grow a single crystal in a predetermined region in said semiconductor layer (3) using as a seed crystal that part of the semiconductor substrate (1) which contacts with said semiconductor layer (3); and forming a second element (T2) on the grown single-crystalline semiconductor region (3') and forming an interconnection between the first and second elements (Tl, T2) by using a part of the single-crystalline semiconductor region (3') from said semiconductor substrate (1) to said second element (T2).

Claim 4

A method for manufacturing a three-dimensional semiconductor device comprising the steps of: forming a first polycrystalline or amorphous semiconductor layer on a part of a first element side on a first insulating film having openings at predetermined positions of first and second elements covered on a single-crystalline semiconductor substrate having the first and second elements; irradiating an energy beam to said first semiconductor layer to grow a single crystal in a predetermined region in said first semiconductor layer using as a seed crystal that part of said semiconductor substrate which contacts with the first semiconductor layer and to form a first single-crystalline semiconductor region; forming a second insulating film having a predetermined opening on a region from the second element side of said first insulating film to the first single-crystalline semiconductor region; forming a second polycrystalline or amorphous semiconductor layer from the second element side of said first insulating film to said second insulating film; irradiating an energy beam to said second semiconductor layer to grow a single crystal at a predetermined region in said second semiconductor layer using as a seed crystal that part of said semiconductor substrate which contacts with the second semiconductor layer; and forming a third element with said first single-crystalline semiconductor region as an interconnection between said first and second elements on the grown second single-crystalline semiconductor region and forming an interconnection between said second and third elements with a part of the second single-crystalline semiconductor region from said second element to said third element.

Claim 5

A method for manufacturing a three-dimensional semiconductor device comprising the steps of: forming a first polycrystalline or amorphous semiconductor layer on a part of a first element side on a first insulating film having openings at predetermined positions of first and second elements covered on a single-crystalline semiconductor substrate having the first and second elements; irradiating an energy beam to said first semiconductor layer to grow a single crystal in a predetermined region in said first semiconductor layer using as a seed crystal that part of said semiconductor substrate which contacts with the first semiconductor layer and to form a first single-crystalline semiconductor region; forming a second insulating film having a predetermined opening on a region from the second element side of said first insulating film to the first single-crystalline semiconductor region; forming a second polycrystalline or amorphous semiconductor layer from the second element side of said first insulating film to said second insulating film; irradiating an energy beam to said second semiconductor layer to grow a single crystal at a predetermined region in said second semiconductor layer using as a seed crystal that part of said semiconductor substrate which contacts with the second semiconductor layer; and forming a third element with said first single-crystalline semiconductor region as an interconnection between said first and second elements on the grown second single-crystalline semiconductor region and forming an interconnection between said second and third elements with a part of the second single-crystalline semiconductor region from said second element to said third element.

Claim 6

The method acccording to any of claims 1 to 3, wherein said energy beam is selected from the group consisting of an electron beam, a laser beam and an ion beam.

Claim 7

The method according to any of claims 1 to 3, wherein said element is a MOS transistor.

Claim 8

The method according to any of claims 1 to 3, wherein said element is a MESFET.

Claim 9

The method according to any of claims 1 to 3, further comprising the step of doping an impurity in the single-crystalline semiconductor region forming said interconnection.

Claim 10

The method according to any of claims 1 to 3, wherein said insulating film is selected from the group consisting of an SiO 2 , an SiN, an Aℓ,203 and an SiN-SiO 2 two layer structure.