Patent EP0448346A1 successfully refreshed from Google Patents.
EP0448346A1
Expired / Lapsed
EP
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Vapor-phase deposition apparatus and vapor-phase deposition method
Assignee: Toshiba Corp
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Filing: 1991-03-19
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Granted: —
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Expires: 2011-03-19
Abstract
Abstract A vapor-phase deposition apparatus comprises substrate-supporting unit (4, 10, 11) for supporting a substrate (3), heater (6) for heating substrate-supporting unit (4, 10, 11), and gas-supplying unit (9) for supplying gas for forming a thin film on the substrate (3) supported by the substrate-supporting unit (4, 10, 11). The substrate-supporting unit (4, 10, 11) includes a first member (4) to be heated to a predetermined temperature by the heater (6), a second member (10) for supporting a peripheral part of the substrate (3), and a support member (11) for supporting the second member (10) on the first member (4) and located outside a periphery of the substrate (3).
Inventors
- 👤 Yuusuke C/O Intellectual Property Division Sato
- 👤 Toshimitsu C/O Intellectual Property Div. Ohmine
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 14:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45519; C23C16/45521; C23C16/458; C23C16/4582; C23C16/48; C23C16/481; H; H10; H10P; H10P72/00; H10P72/70; H10P72/76; H10P72/7604; H10P72/7611; H10P72/7614; H10P72/7624
Claims Analysis
Total Claims: 66
Claim 1
Independent Claim
100 words
A vapor-phase deposition apparatus comprising: substrate-supporting means for supporting a substrate; heating means for heating the substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by the substrate-supporting means, characterized in that said substrate-supporting means comprises: a first member (4) to be heated to a predetermined temperature by said heating means (6, 6a, 6b, 7); a second member (10) for supporting a peripheral part of the substrate (3); and a support member (11) supporting said second member (10) on said first member (4) and located outside a periphery of the substrate (3).
Claim 2
Dependent Claim
23 words
The apparatus according to claim 1, characterized in that said second member (10) is made of the same material as said substrate (3).
Claim 3
Dependent Claim
31 words
The apparatus according to claim 1, characterized in that said support member (11) spaces said first member (4) away from the substrate (3) by a distance of at least 1 mm.
Claim 4
Dependent Claim
28 words
The apparatus according to claim 1, characterized by further comprising a reaction vessel (2) containing said substrate-supporting means and having an inner surface (2c) which has low heat-emissibility.
Claim 5
Dependent Claim
43 words
The apparatus according to claim 1, characterized by further comprising: a reaction (2) vessel containing said substrate-supporting means; and substrate-moving means (37) for moving at least said second member (10) and the substrate (3) simultaneously, into and out of said reaction vessel (2).
Claim 6
Dependent Claim
32 words
The apparatus according to claim 1, characterized in that said second member (10) has a recess (20) having a shape similar to that of the substrate (3), and a substrate-supporting portion (10).
Claim 7
Dependent Claim
72 words
A vapor-phase deposition apparatus comprising: substrate-supporting means for supporting a substrate; heating means for heating the substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by the substrate-supporting means, characterized in that said substrate-supporting means includes a circular recess (20) having a diameter greater than that of the substrate (3), and a substrate-supporting member (10) for supporting a peripheral part of the substrate (3).
Claim 8
Dependent Claim
38 words
The apparatus according to claim 7, characterized in that said recess (20) has such a depth that the substrate (3) is spaced apart from the bottom of the recess (20) by a distance of at least 1 mm.
Claim 9
Dependent Claim
28 words
The apparatus according to claim 7, characterized by further comprising a reaction vessel (2) containing said substrate-supporting means and having an inner surface (2c) which has low heat-emissibility.
Claim 10
Dependent Claim
103 words
A vapor-phase deposition apparatus comprising: substrate-supporting means for supporting a substrate; heating means for heating said substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by said substrate-supporting means, characterized in that said substrate-supporting means includes a first member (4) to be hated to a predetermined temperature by said heating means (6) and having a circular recess (20) with a diameter greater than that of the substrate (3) and a second member (10) supported by said first member (4) and located above the circular recess (20), for supporting a peripheral part of the substrate (3).
Claim 11
Dependent Claim
23 words
The apparatus according to claim 10, characterized in that said second member (10) is made of the same material as the substrate (3).
Claim 12
Dependent Claim
38 words
The apparatus according to claim 10, characterized in that said recess (20) has such a depth that the substrate (3) is spaced apart from the bottom of the recess (20) by a distance of at least 1 mm.
Claim 13
Dependent Claim
28 words
The apparatus according to claim 10, characterized by further comprising a reaction vessel (2) containing said substrate-supporting means and having an inner surface (2c) which has low heat-emissibility.
Claim 14
Dependent Claim
43 words
The apparatus according to claim 10, characterized by further comprising: a reaction vessel (2) containing said substrate-supporting means; and substrate-moving means (37) for moving at least said second member (10) and the substrate (3) simultaneously, into and out of said reaction vessel (2).
Claim 15
Dependent Claim
96 words
A vapor-phase deposition apparatus comprising: substrate-supporting means for supporting a substrate; heating means for heating said substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by said substrate-supporting means, characterized in that said substrate-supporting means comprises: a first member (4) to be heated to a predetermined temperature by said heating means (6); and a second member (10) made of material having a thermal conductivity less than that of said first member (4), and provided on the first member (4), for supporting a peripheral part of the substrate (3).
Claim 16
Dependent Claim
23 words
The apparatus according to claim 15, characterized in that said second member (10) is made of the same material as the substrate (3).
Claim 17
Dependent Claim
36 words
The apparatus according to claim 15, characterized in that said second member (10) is formed such that the substrate (3) is spaced apart from said first member (10) by a distance of at least 1 mm.
Claim 18
Dependent Claim
28 words
The apparatus according to claim 15, characterized by further comprising a reaction vessel (2) containing said substrate-supporting means and having an inner surface (2c) which has low heat-emissibility.
Claim 19
Dependent Claim
43 words
The apparatus according to claim 15, characterized by further comprising: a reaction vessel (2) containing said substrate-supporting means; and substrate-moving means (37) for moving at least said second member (10) and the substrate (3) simultaneously, into and out of said reaction vessel (2).
Claim 20
Dependent Claim
110 words
A vapor-phase deposition apparatus comprising: substrate-supporting means for supporting a substrate; heating means for heating said substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by said substrate-supporting means, characterized in that said substrate-supporting means has a substrate-supporting member (4) which is to be heated to a predetermined temperature by said heating means (6) and which has a recess (20) having a concave bottom having a radius of curvature substantially equal to the value which the substrate (3) will have when it is heated and warped, and being spaced away from the substrate (3) by a distance of at least 1 mm.
Claim 21
Dependent Claim
23 words
The apparatus according to claim 20, characterized in that said substrate-supporting member (4) is made of the same material as the substrate (3).
Claim 22
Dependent Claim
26 words
The apparatus according to claim 20, characterized in that the radius of curvature of said concave bottom falls within a range of 10 to 100 m.
Claim 23
Dependent Claim
28 words
The apparatus according to claim 20, characterized by further comprising a reaction vessel (2) containing said substrate-supporting means and having an inner surface (2c) which has low heat-emissibility.
Claim 24
Dependent Claim
109 words
A vapor-phase deposition apparatus comprising: substrate-supporting means for supporting a substrate; heating means for heating said substrate-supporting means; and first gas-supplying means for supplying a first gas for forming a thin film on the substrate supported by said substrate-supporting means, characterized in that said substrate-supporting means comprises: a substrate-supporting member (4) to be heated to a predetermined temperature by said heating means (6), having a recess (20) defining a space with the substrate (3) when the substrate (3) is mounted on said substrate-supporting member (4); and a second gas-supplying means (19) for supplying a second gas into the space defined by the substrate (3) and said substrate-supporting member (4).
Claim 25
Dependent Claim
23 words
The apparatus according to claim 24, characterized in that said second gas has a thermal conductivity less that that of the first gas.
Claim 26
Dependent Claim
15 words
The apparatus according to claim 24, characterized in that said second gas is purging gas.
Claim 27
Dependent Claim
15 words
The apparatus according to claim 24, characterized in that said second gas is carrier gas.
Claim 28
Dependent Claim
23 words
The apparatus according to claim 24, characterized in that said substrate-supporting member (4) is made of the same material as the substrate (3).
Claim 29
Dependent Claim
38 words
The apparatus according to claim 24, characterized in that said recess (20) has such a depth that the substrate (3) is spaced apart from the bottom of the recess (20) by a distance of at least 1 mm.
Claim 30
Dependent Claim
28 words
The apparatus according to claim 24, characterized by further comprising a reaction vessel (2) containing said substrate-supporting means and having an inner surface (2c) which has low heat-emissibility.
Claim 31
Dependent Claim
101 words
A vapor-phase deposition apparatus comprising: substrate-supporting means for supporting a substrate; heating means for heating said substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by said substrate-supporting means, characterized in that said substrate-supporting means comprises: a first member (4) to be heated to a predetermined temperature by said heating means (6); a second member (10) for supporting a peripheral part of the substrate (3); and a support member (13) supporting said second member (10) such that said second member (10) opposes said first member (4), spaced away from said first member (6).
Claim 32
Dependent Claim
23 words
The apparatus according to claim 31, characterized in that said second member (10) is made of the same material as the substrate (3).
Claim 33
Dependent Claim
39 words
The apparatus according to claim 31, characterized in that said support member (13) is provided such that said first member (4) and the substrate (3) are spaced apart from each other by a distance of at least 1 mm.
Claim 34
Dependent Claim
42 words
The apparatus according to claim 31, characterized by further comprising a reaction vessel (2) containing said support member (13) and having an inner surface, and in which said support member (13) is attached to the inner surface of said reaction vessel (2).
Claim 35
Dependent Claim
48 words
The apparatus according to claim 31, characterized by further comprising a reaction vessel (2) containing said support member (13) and having an inner surface, and a base plate (1) supporting said reaction vessel (2), and in which said support member (13) is attached to the base plate (1).
Claim 36
Dependent Claim
30 words
The apparatus according to claim 31, characterized by further comprising a shaft (5) supporting said substrate-supporting means, and in which said support member (13) is attached to said shaft (5).
Claim 37
Dependent Claim
28 words
The apparatus according to claim 31, characterized by further comprising a reaction vessel (2) containing said substrate-supporting means and having an inner surface (2c) which has low heat-emissibility.
Claim 38
Dependent Claim
43 words
The apparatus according to claim 31, characterized by further comprising: a reaction vessel (2) containing said substrate-supporting means; and substrate-moving means (37) for moving at least said second member (10) and the substrate (3) simultaneously, into and out of said reaction vessel (2).
Claim 39
Dependent Claim
99 words
A vapor-phase deposition apparatus comprising: substrate-supporting means for supporting a substrate; heating means for heating said substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by said substrate-supporting means, characterized in that said substrate-supporting means comprises: a first member (4) to be heated to a predetermined temperature by said heating means (6); and a second member (10) made of material having emissibility substantially equal to that of said substrate (3), for supporting a peripheral part of the substrate (3), thereby supporting the substrate (3) with respect to said first member (10).
Claim 40
Dependent Claim
23 words
The apparatus according to claim 39, characterized in that said second member (10) is made of the same material as the substrate (3).
Claim 41
Dependent Claim
40 words
The apparatus according to claim 39, characterized in that said second member (10) has such a size that the substrate (3) and said first member (4) are spaced apart from each other by a distance of at least 1 mm.
Claim 42
Dependent Claim
28 words
The apparatus according to claim 39, characterized by further comprising a reaction vessel (2) containing said substrate-supporting means and having an inner surface (2c) which has low heat-emissibility.
Claim 43
Dependent Claim
43 words
The apparatus according to claim 39, characterized by further comprising: a reaction vessel (2) containing said substrate-supporting means; and substrate-moving means (37) for moving at least said second member (10) and the substrate (3) simultaneously, into and out of said reaction vessel (2).
Claim 44
Dependent Claim
106 words
A vapor-phase deposition apparatus comprising: substrate-supporting means for supporting a substrate; heating means for heating said substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by said substrate-supporting means, characterized in that said substrate-supporting means comprises: a first member (4) to be heated to a predetermined temperature by said heating means (6); and a second member (10) made of material having a heat capacity per unit area, which is substantially equal to that of said substrate (3), for supporting a peripheral part of the substrate (3), thereby supporting the substrate (3) with respect to said first member (4).
Claim 45
Dependent Claim
23 words
The apparatus according to claim 44, characterized in that said second member (10) is made of the same material as the substrate (3).
Claim 46
Dependent Claim
39 words
The apparatus according to claim 44, characterized in that said second member (10) has such a size that the substrate and said first member (4) are spaced apart from each other by a distance of at least 1 mm.
Claim 47
Dependent Claim
28 words
The apparatus according to claim 44, characterized by further comprising a reaction vessel (2) containing said substrate-supporting means and having an inner surface (2c) which has low heat-emissibility.
Claim 48
Dependent Claim
43 words
The apparatus according to claim 44, characterized by further comprising: a reaction vessel (2) containing said substrate-supporting means; and substrate-moving means (37) for moving at least said second member (10) and the substrate (3) simultaneously, into and out of said reaction vessel (2).
Claim 49
Dependent Claim
80 words
A vapor-phase deposition apparatus comprising: substrate-supporting means including a body and a support portion for supporting a peripheral part of a substrate; heating means for heating said substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by said substrate-supporting means; characterized by further comprising temperature-compensating means for compensating a temperature fall at a peripheral part of the substrate (3), which occurs when the substrate (3) is heated by said substrate-heating means (6).
Claim 50
Dependent Claim
49 words
The apparatus according to claim 49, characterized in that said temperature-compensating means comprises a projection (10f, 10g) having such a size that the distance between said body (4) and support portion (10n) of said substrate-supporting means is shorter than the distance between said body (4) and the substrate (3).
Claim 51
Dependent Claim
45 words
The apparatus according to claim 49, characterized in that said temperature-compensating means includes temperature-controlling member (6b, 8b) for heating said support portion which contacts the peripheral part of the substrate (3) to a temperature hither than that of any other portion of said support portion.
Claim 52
Dependent Claim
30 words
The apparatus according to claim 49, characterized in that said temperature-compensating means heats said support portion to a temperature higher than that of the substrate (3) by 10°C to 200°C.
Claim 53
Dependent Claim
50 words
The apparatus according to claim 50, characterized in that said projection (10f, 10g) has such a height that the ratio of the distance (H2) between said body (4) and the substrate (3) to the distance (H1) between said body (4) and said support portion (10n) ranges from 2 to 20.
Claim 54
Dependent Claim
42 words
The apparatus according to claim 49, characterized in that said temperature-compensating means includes temperature-controlling means (9a, 9b) for controlling the temperature of said support portion which contacts the peripheral part of the substrate (3), independently of the temperature of the substrate (3).
Claim 55
Dependent Claim
37 words
The apparatus according to claim 49, characterized in that said heating means (6) comprises divided portions, and at least one of spaces between the divided portions is located corresponding to an outermost portion of the substrate (3).
Claim 56
Dependent Claim
71 words
A vapor-phase deposition apparatus comprising: substrate-supporting means having a support member for supporting a peripheral part of a substrate; heating means for heating said substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by said substrate-supporting means, characterized in that said support member (10) of said substrate-supporting means includes a plurality of blocks (10j, 10k) arranged along the periphery of the substrate (3).
Claim 57
Dependent Claim
66 words
A vapor-phase deposition apparatus comprising: substrate-supporting means having a support member for supporting a peripheral part of a substrate; heating means for heating said substrate-supporting means; and gas-supplying means for supplying gas for forming a thin film on the substrate supported by said substrate-supporting means, characterized in that a rib (10h) is formed to said substrate-supporting member (10), for preventing said substrate-supporting member (10) from warping.
Claim 58
Dependent Claim
92 words
A vapor-phase deposition method comprising the steps of: supporting a substrate at a peripheral part thereof within a reaction vessel, by means of a substrate-supporting member; supporting said substrate-supporting member at a peripheral portion thereof, by means of a substrate holder; and heating said substrate holder to a predetermined temperature by means of heating means, and simultaneously supplying gas into said reaction vessel, thereby to form a thin film on the substrate; characterized in that said holder (4, 11) supports said substrate-supporting member (10) at outside a periphery of the substrate (3).
Claim 59
Dependent Claim
78 words
A vapor-phase deposition method comprising the steps of: supporting a substrate at a peripheral part thereof within a reaction vessel, by means of a substrate holder; and heating said substrate holder to a predetermined temperature by means of heating means, and simultaneously supplying gas into said reaction vessel, thereby to form a thin film on the substrate; characterized in that said holder (4) has a circular recess (20) having a diameter greater than that of the substrate (3).
Claim 60
Dependent Claim
86 words
A vapor-phase deposition method comprising the steps of: supporting a substrate at a peripheral part thereof within a reaction vessel, by means of substrate-supporting means; supporting said substrate-supporting means by means of a substrate holder; and heating said substrate holder to a predetermined temperature by means of heating means, and supplying gas into said reaction vessel, thereby to form a thin film on the substrate; characterized in that said holder (4) has an circular recess (20) having a diameter greater than that of the substrate (3).
Claim 61
Dependent Claim
95 words
A vapor-phase deposition method comprising the steps of: supporting a substrate-supporting member by means of a substrate holder heated to a predetermined temperature by heating means, said substrate-supporting member supporting a substrate at a peripheral part thereof within a reaction vessel; and heating said substrate holder to a predetermined temperature by means of said heating means, and simultaneously supplying gas into said reaction vessel, thereby to form a thin film on the substrate; characterized in that said substrate-supporting member (10) is made of material having a thermal conductivity less than that of said holder (4).
Claim 62
Dependent Claim
104 words
A vapor-phase deposition method comprising the steps of: supporting a substrate at a peripheral part thereof within a reaction vessel, by means of a substrate holder; and heating said substrate holder to a predetermined temperature by means of heating means, and supplying gas into said reaction vessel, thereby to form a thin film on the substrate, characterized in that holder (4) has an circular recess (20) having a concave bottom, the radius of curvature of which is substantially equal to the radius of curvature which the substrate (3) have when it warps when heated to a predetermined temperature by means of heating means (6).
Claim 63
Dependent Claim
103 words
A vapor-phase deposition method comprising the steps of: supporting a substrate at a peripheral part thereof within a reaction vessel, by means of a substrate holder having a recess; and heating said substrate holder to a predetermined temperature by means of heating means, and simultaneously supplying feed gas and carrier gas into said reaction chamber, thereby to form a thin film on the substrate, characterized by further comprising the step of supplying gas into said recess (20) covered by the substrate (3), said gas having lower thermal conductivity than said feed gas and said carrier gas when said substrate holder (4) is heated.
Claim 64
Dependent Claim
106 words
A vapor-phase deposition method comprising the steps of: supporting a substrate at a peripheral part thereof within a reaction vessel, by means of a substrate-supporting member located above a substrate holder; and heating said substrate holder to a predetermined temperature by means of heating means, and simultaneously supplying gas into said reaction vessel, thereby to form a thin film on the substrate, characterized by further comprising the step of positioning said substrate-supporting member (10) such that the substrate-supporting member (10) opposes a substrate holder (4) spaced away from the holder (4) which is to be heated to a predetermined temperature by means of heating means (6).
Claim 65
Dependent Claim
93 words
A vapor-phase deposition method comprising the steps of: supporting a substrate-supporting member by means of a substrate holder which is to be heated to a predetermined temperature by heating means, said substrate-supporting member supporting a substrate at a periphery thereof; and heating said substrate holder to a predetermined temperature by means of heating means, and supplying gas into said reaction vessel, thereby to form a thin film on the substrate, characterized in that said substrate-supporting member (10) is made of material having substantially the same heat emissibility as that of the substrate (3).
Claim 66
Dependent Claim
93 words
A vapor-phase deposition method comprising the steps of: supporting a substrate-supporting member by means of a substrate holder which is to be heated to a predetermined temperature by heating means, said substrate-supporting member supporting a substrate at a periphery thereof; and heating said substrate holder to a predetermined temperature by means of heating means, and supplying gas into said reaction vessel, thereby to form a thin film on the substrate, characterized in that said substrate-supporting means (4) is made of material having substantially the same heat capacity as that of the substrate (3).
References Cited (Backward Citations)
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