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EP0447850A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method and apparatus for producing transparent conductive film

Assignee: Ulvac Inc
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Filing: 1991-02-27
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Granted: —
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Expires: 2011-02-27
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Abstract

Abstract A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target (14) at 600 Oe or greater as well as by charging the target (14) with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The apparatus has a vacuum chamber (1) adapted to support therein a substrate (11) and a target (14) in an opposed relationship for forming by sputtering the transparent conductive film on the substrate (11) by plasma discharging generated therebetween. The apparatus has a device (16) for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target (14), a DC power supply (19) for charging the target (14) with a DC electric field, and an RF power supply (20) for charging the target (14) with an RF electric field superimposed on the DC electric field.

Inventors

  • 👤 Satoru Nihon Shinku Gijutsu K.K. Ishibashi
  • 👤 Kyuzo Nihon Shinku Gijutsu K.K. Nakamura
  • 👤 Yasushi Nihon Shinku Gijutsu K.K. Higuchi
  • 👤 Takashi Nihon Shinku Gijutsu K.K. Komatsu
  • 👤 Yuzo Nihon Shinku Gijutsu K.K. Murata
  • 👤 Yoshifumi Nihon Shinku Gijutsu K.K. Ota

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-05 07:40
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/086; C23C14/22; C23C14/34; C23C14/35; H; H10; H10F; H10F71/00; H10F71/138; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 72 words
A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity, wherein said sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target (14) at 600 Oe or greater as well as by charging said target (14) with a DC electric field superimposed by an RF electric field.
Claim 2
Independent Claim 128 words
An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity, said apparatus having a vacuum chamber (1) adapted to support therein a substrate (11) and a target (14) in an opposed relationship for forming by sputtering said transparent conductive film on said substrate (11) by plasma discharging generated therebetween, wherein said apparatus comprises means (16) for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of said target (14), DC power supply means (19) for charging said target (14) with a DC electric field, and RF power supply means (20) for charging said target (14) with an RF electric field superimposed on said DC electric field.

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