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EP0446145A2
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Process for preparing high-temperature superconducting thin films
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-03-11
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Granted: —
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Expires: 2011-03-11
Abstract
Abstract A process for preparing a-axis oriented thin film of oxide superconducting material on a substrate by two steps. In the first step, an under-layer of an oxide superconducting material is deposited on the substrate under such a condition that the substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of the oxide superconducting material. In the second step, an upper-layer of the same oxide superconducting material is deposited on a surface of the resulting under-layer under such a condition that the substrate is heated at a temperature which is lowered by 10 to 100 °C than the temperature which is used in the first step.
Inventors
- 👤 Saburo C/O Itami Works Of Sumitomo Tanaka
- 👤 Hidenori C/O Itami Works Of Sumitomo Nakanishi
- 👤 Hideo C/O Itami Works Of Sumitomo Itozaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:47
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/731; Y10S505/732
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
101 words
A process for preparing a-axis oriented thin film of oxide superconducting material, characterized by the steps of depositing an under-layer of said oxide superconducting material on a substrate under such a condition that said substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of said oxide superconducting material, and then deposition an upper-layer of said oxide superconducting material on a surface of said under-layer under such a condition that said substrate is heated at a temperature which is higher by 10 to 100 °C than said temperature which is used in the first step.
Claim 2
Dependent Claim
21 words
The process set forth in Claim 1 wherein said under-layer is deposited up to a thickness of 20 to 1,000 Å.
Claim 3
Dependent Claim
17 words
The process set forth in Claim 1 or 2 wherein said upper-layer is produced by vacuum-evaporation method.
Claim 4
Dependent Claim
15 words
The process set forth in Claim 3 wherein said under-layer is produced by sputtering method.
Claim 5
Dependent Claim
16 words
The process set forth in Claim 3 or 4 wherein said sputtering method is RF sputtering.
Claim 6
Dependent Claim
22 words
The process set forth in any one of Claim 3 to 5 wherein said substrate is a single crystal substrate of oxide.
Claim 7
Dependent Claim
31 words
The process set forth in Claim 6 wherein said substrate is a single crystal substrate of oxide selected from the group comprising MgO, SrTiO₃, LaAlO₃, LaGaO₃ and yttrium stabilized zirconia (YSZ).
Claim 8
Dependent Claim
23 words
The process set forth in any one pf Claim 3 to 7 wherein said oxide superconducting material is Y-Ba-Cu-O oxides or Bi-Sr-Ca-Cu-O oxides.
Claim 9
Dependent Claim
21 words
The process set forth in Claim 1 or 2 wherein both of said under-layer and upper-layer are produced by sputtering method.
Claim 10
Dependent Claim
14 words
The process set forth in Claim 9 wherein said sputtering method is RF sputtering.
Claim 11
Dependent Claim
19 words
The process set forth in Claim 9 or 10 wherein said substrate is a single crystal substrate of oxide.
Claim 12
Dependent Claim
31 words
The process set forth in Claim 11 wherein said substrate is a single crystal substrate of oxide selected from the group comprising MgO, SrTiO₃, LaAlO₃, LaGaO₃ and yttrium stabilized zirconia (YSZ).
Claim 13
Dependent Claim
23 words
The process set forth in any one of Claim 9 to 12 wherein said oxide superconducting material is Y-Ba-Cu-O oxides or Bi-Sr-Ca-Cu-O oxides.
References Cited (Backward Citations)
No citation records indexed.
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