EP0442002A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Radiation producing semiconductor device
Assignee: Siemens AG
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Filing: 1990-02-13
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Granted: —
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Expires: 2010-02-13
Abstract
Abstract Surface-light-emitting diode in which a first contact (5) is deposited as a layer on a surface extending parallel to the plane of an active layer (3) provided for producing radiation and sufficiently close to said active layer (3), and said surface is structured in a grating-like manner in such a way that, when the device is being operated, polar surface-plasma ions are excited on the free surface of the first contact (5); these ions produce a strongly directed radiation. <IMAGE>
Inventors
- 👤 Anton Dr. Köck
- 👤 Erich Prof. Gornik
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 13:57
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H01S5/18; H01S5/185; H01S5/187
Claims Analysis
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References Cited (Backward Citations)
EP0309744A2
Cited
EP0334209A2
Cited
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