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EP0435331A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor device and a method of fabricating the same

Assignee: Sony Corp
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Filing: 1990-12-28
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Granted: —
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Expires: 2010-12-28
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Abstract

Abstract A semiconductor device comprises a semiconductor substrate (1) provided with a collector region (62) a base region (60) and an emitter region (61) in a lateral arrangement. Respective portions having peak impurity concentrations of the collector region and the emitter region are formed within the semiconductor substrate. A method of fabricating a semiconductor device comprises a step of forming a collector region of a second conduction type and a emitter region of a second conduction type in a lateral arrangement in a semiconductor substrate serving as a base region of a first conduction type by using a first mask provided with a pair of openings, and a step of forming heavily doped regions of the second conduction type so as to be connected respectively to the collector region and the emitter region by using a second mask provided with a pair of openings separated from each other by a distance greater than the distance between the openings of the first mask.

Inventors

  • 👤 Takayuki C/O Sony Corporation Gomi
  • 👤 Minoru C/O Sony Corporation Nakamura
  • 👤 Hiroaki C/O Sony Corporation Anmo
  • 👤 Norikazu C/O Sony Corporation Ohuchi
  • 👤 Hiroyuki C/O Sony Corporation Miwa
  • 👤 Akio C/O Sony Corporation Kayanuma
  • 👤 Koji C/O Sony Corporation Kobayashi

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 10:58
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/34; H10D10/00; H10D10/01; H10D10/061; H10D10/60; H10D84/00; H10D84/01; H10D84/0112; H10D84/0114; H10D84/02; H10D84/03; H10D84/038

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 48 words
A semiconductor device comprising a semiconductor substrate (1) provided with a collector region (62), a base region (60) and an emitter region (61) in a lateral arrangement, wherein respective portions having peak impurity concentrations of the collector region and the emitter region are formed within the semiconductor substrate.
Claim 2
Independent Claim 114 words
A method of fabricating a semiconductor device comprising: a step of forming a collector region of a second conduction type and a emitter region of a second conduction type in a lateral arrangement in a semiconductor substrate serving as a base region of a first conduction type by using a first mask provided with a pair of openings; and a step of forming heavily doped regions of the second conduction type so as to be connected respectively to the collector region and the emitter region by using a second mask provided with a pair of openings separated from each other by a distance greater than the distance between the openings of the first mask.
Claim 3
Independent Claim 86 words
A method of fabricating a semiconductor device comprising a semiconductor substrate provided with a lateral transistor, a vertical transistor and a Schottky barrier diode with a guardring, said method comprising a step of simultaneously doping regions in the semiconductor substrate with the same impurity by using a single mask provided with a plurality of openings to form simultaneously an emitter region and a collector region for the lateral transistor, a guardring region for the Schottky barrier diode, and a link base region for the vertical transistor.

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