Patent EP0434264A2 successfully refreshed from Google Patents.
EP0434264A2
Expired / Lapsed
EP
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Package for power semiconductor components
Assignee: Westinghouse Electric Corp
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Filing: 1990-12-06
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Granted: —
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Expires: 2010-12-06
Abstract
Abstract A heat dissipating module and package for power microwave transistors and method of making same that includes a substrate having a thick copper layer bonded to a ceramic core which is thereto subjected to high processing temperatures.
Inventors
- 👤 John Andrew Costello
- 👤 Prosenjit Rai-Choudhury
- 👤 Harry Buhay
- 👤 Kenneth Joseph Petrosky
- 👤 Richard Regis Papania
- 👤 Gene Anthony Madia
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 06:47
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/255; H10W72/00; H10W72/30; H10W76/00; H10W76/10; H10W76/12; H10W76/15; H10W76/157; H10W90/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/351; H10W72/352
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
263 words
A power transistor package 50, comprising: a metallic base member 58; a substrate 60 having a ceramic core 49 with first and second opposite planar surfaces (62, 64), each of the planar surfaces having a layer of copper 45, 45' with a thickness in the range of approximately 0.5 to 7 mils bonded to each of the planar surfaces by a metallic film 47; a layer of nickel 43 having a thickness substantially less than the copper layer plated on the copper layer 45, at least a portion of the copper and nickel layer of said first planar surface 62 being electrically isolated from the base member 58, the copper layer 45 having the characteristics and thickness to spread heat from a plurality of power microwave transistors 20 mounted on the one electrically isolated planar surface 62, the second planar surface 64 being brazed to the metallic base member 58; a frame assembly 74 brazed to either one of the substrate 60 or base member 58 surrounding and spaced from the electrically isolated planar surface 62 of the substrate 60 for connecting electrically at least two terminals of each of a plurality of power microwave transistors 20 exterior the respective package 50, the two terminals being electrically isolated from the substrate 60 and the base member 58 and from each other; a plurality of power transistors 20 mounted to the electrically isolated planar surface 62 of the substrate 60; and a metallic cover 82 bonded to the frame assembly 74 for hermetically sealing the plurality of transistors 20 within the respective package 50.
Claim 2
Dependent Claim
42 words
The package of claim 1 wherein the metallic base member 58 has opposite planar surfaces, the frame assembly 74 is brazed to the first surface 62 of the substrate 60 surrounding and spaced from the electrically isolated portion of the first surface.
Claim 3
Dependent Claim
17 words
The package of claim 1 wherein the brazed base member 58 and substrate 60 is gold plated.
Claim 4
Dependent Claim
26 words
The package of claim 1 wherein the ceramic core 49 is composed of one of the group consisting of beryllium oxide, aluminum nitride and silicon carbide.
Claim 5
Dependent Claim
37 words
The package of claim 1 wherein the bonding material 47 for the copper layer is a film approximately 20 to 80 nanometers thick composed of one of the group consisting of chromium, titanium, molybdenum, tungsten, and titanium-tungsten.
Claim 6
Dependent Claim
32 words
The package of claim 1 wherein the brazing material 51 for brazing the base member 58, substrate 60, and frame assembly 74 to one another is a mixture of silver and copper.
Claim 7
Dependent Claim
34 words
The package of claim 1 wherein the plurality of transistors include a silicon die, and the silicon die is soldered to the electrically isolated first surface of the substrate with a gold silicon solder.
Claim 8
Dependent Claim
21 words
The package of claim 1 wherein the metallic cover 82 is bonded to the frame assembly 74 with gold tin solder.
Claim 9
Dependent Claim
25 words
The package of claim 1 wherein the frame assembly 74 includes a plurality of laminated conductive and insulative layers co-fired into an integral unitary member.
Claim 10
Dependent Claim
56 words
The package of claim 1 wherein the metallic base member 58 has a centrally disposed recess, the frame assembly 74 is brazed to the base member surrounding the recess, and the substrate is disposed in the recess and spaced from the edges thereof for electrically isolating the first surface of the substrate from the base member.
Claim 11
Dependent Claim
111 words
The package of claim 1 wherein the substrate 60 has a ceramic core 49 composed of one of the group consisting of beryllium oxide, aluminum nitride, and silicon carbide having a thickness in the range of approximately 7 to 40 mils, a film 47 of one of the group consisting of chromium, titanium, molybdenum, tungsten and titanium-tungsten, deposited directly on the ceramic core having a thickness in the range of approximately 20 to 80 nanometers for bonding the copper layer to the core, a layer of nickel plated to the copper layer, and a layer of gold plated to the nickel layer on at least the first surface of the substrate.
Claim 12
Dependent Claim
35 words
The package of claim 11 wherein the brazing material 51 for brazing the base member 58, substrate 60, and frame assembly 74 to one another is a preform of a mixture of silver and copper.
Claim 13
Dependent Claim
39 words
The package of claim 12 wherein the plurality of transistors 20 of a package 50 includes a silicon die, and the silicon die is soldered to the electrically isolated first surface of the substrate with a gold silicon solder.
References Cited (Backward Citations)
No citation records indexed.
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