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EP0432900A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of producing a semiconductor memory device using a phase shifting mask

Assignee: Sony Corp
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Filing: 1990-11-13
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Granted: —
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Expires: 2010-11-13
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Abstract

Abstract A semiconductor memory structure (Figure 6A) comprises a pattern layer having a plurality of elemental patterns, and another pattern layer having, in a single cell or adjacent cells, more than one pair of element patterns including mutually proximate parallel portions, and is formed using a phase shifting mask having a light shielding region (10), light transmitting portions (12) and phase shifting films (11) on a substrate (1) transparent to the wavelength of exposure light, wherein the light transmitting portions (12) and the phase shifting films (11) form pairs each including mutually proximate parallel portions.

Inventors

  • 👤 Morikazu C/O Patents Division Konishi
  • 👤 Hideo C/O Patents Division Shimizu

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-07 12:27
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/15; G; G03; G03F; G03F1/00; G03F1/36; G03F1/26

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 38 words
A semiconductor memory structure comprising: a pattern layer having a plurality of elemental patterns; and another pattern layer having, in a single cell or adjacent cells, more than one pair of elemental patterns including mutually proximate parallel portions.
Claim 2
Dependent Claim 38 words
A semiconductor memory structure comprising: a pattern layer having a plurality of elemental patterns; and another pattern layer having, in a single cell or adjacent cells, more than one pair of elemental patterns including mutually proximate parallel portions.
Claim 3
Dependent Claim 60 words
A phase shifting mask for use in producing a semiconductor memory device, the mask comprising: a light shielding region (10), light transmitting portions (12) and phase shifting films (11) on a substrate (1) transparent to the wavelength of exposure light; wherein said light transmitting portions (12) and said phase shifting films (11) constitute pairs each including mutually proximate parallel portions.
Claim 4
Dependent Claim 60 words
A phase shifting mask for use in producing a semiconductor memory device, the mask comprising: a light shielding region (10), light transmitting portions (12) and phase shifting films (11) on a substrate (1) transparent to the wavelength of exposure light; wherein said light transmitting portions (12) and said phase shifting films (11) constitute pairs each including mutually proximate parallel portions.

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