Doping method of barrier region in semiconductor device

Claim 1

A method of producing a semiconductor device on a semiconductor substrate, comprising steps of: preparing an exposed active surface on a major surface of the semiconductor substrate; applying a source containing an impurity component to the exposed active surface to adsorb thereon a firm of the impurity component so as to form a barrier region along the major surface of the semiconductor substrate; and forming on the major surface of the semiconductor substrate an semiconductor device protected by the barrier region.

Claim 2

A method according to claim; wherein the preparing step comprises selectively exposing an active surface to define an isolation region on the major surface of the semiconductor substrate and a device region surrounded by the isolation region; and the forming step includes oxidizing the active surface through the adsorbed impurity component film so as to grow a field oxide layer above the impurity component film to provide the barrier region in the form of a field dope layer at a boundary between the field oxide layer and a layer of the semiconductor substrate within the isolation region, and forming a semiconductor device in the device region surrounded by the field oxide layer.

Claim 8

A method of forming a semiconductor device separation region, comprising: first step for forming a coating having a given pattern on a surface of a semiconductor substrate to define a covered region and uncovered region; second step for removing an inert film from the semiconductor substrate surface within the uncovered region to expose a semiconductor active surface; third step for applying to the semiconductor substrate surface a gas containing an impurity component to selectively adsorb the impurity component on the semiconductor active surface to form an impurity layer; fourth step for carrying out thermal oxidation of the semiconductor substrate surface through the impurity layer to form a field oxide film layer selectively on the uncovered region to provide an isolation region composed of the field oxide film layer and a field dope layer comprised of the impurity layer shifted, under the field oxide film layer; and fifth step for removing the coating to turn the covered region to a device region in which is to be formed a device.

Claim 12

A method of forming a semiconductor device separation region, comprising: first step for removing an inert film from a surface of a semiconductor substrate to expose an active surface; second step for applying a gas containing an impurity component to the active surface while heating the semiconductor substrate to form an impurity adsorption layer; third step for depositing an insulating layer in the form of a field insulating film on the impurity adsorption layer to provide a field dope layer caused by the impurity adsorption layer at a boundary between the insulating layer and the semiconductor substrate; and fourth step for selectively removing a double layer structure comprised of the insulating layer and the field dope layer to define a device region in which a surface of the semiconductor substrate is exposed and an isolation region covered by the remaining double layer structure.

Claim 16

A method of producing a field effect transistor comprising: first step for removing an oxide film from a first semiconductor layer of a first conductivity type to expose a chemically active surface; second step for applying a gas containing an impurity component of the first conductivity type to the active surface to adsorb the impurity component of thereby form an impurity layer of the first conductivity type; third step for depositing a second semiconductor layer on the impurity layer; fourth step for forming subsequentially a gate insulating film and a gate electrode on the deposited second semiconductor layer; and fifth step for introducing another impurity component of a second conductivity type selectively through a pair of regions divided by the gate electrode from each other into the semiconductor layers in a certain depth level below a horizontal level of the impurity layer to form a pair of source and drain regions so that a channel region is provided in the second semiconductor layer between the source and drain regions while a channel stopper region composed of the impurity layer of the first conductivity is arranged under the channel region.

Claim 22

A method of producing a Metal Insulator Semiconductor field effect transistor, comprising: first step for forming on a surface of a semiconductor substrate of the first conductivity type an active region surrounded by the first field oxide film; second step for depositing a semiconductor layer on the active region and the first field oxide film; third step for selectively thermally oxidizing the semiconductor layer except a portion disposed on the active region and on a periphery of the first field oxide film adjacent to the active region to form a second field oxide film to thereby provide a device region composed of the remaining part of the semiconductor layer; fourth step for forming a double layer composed of a gate insulating film and a gate electrode on a part of the device region; fifth step for activating a part of a surface of the semiconductor layer which is not covered by the double layer; sixth step for applying a gas containing an impurity component of a second conductivity type to the activated surface to form an adsorption film containing the impurity component of the second conductivity type; and carrying out solid-phase diffusion from a diffusion source of the adsorption film to form source and drain regions of the second conductivity type in the semiconductor layer.

Claim 24

A method of producing a Metal Insulator semiconductor field effect transistor, comprising: first step for forming an active region surrounded by the first field oxide film on a surface of a semiconductor substrate of a first conductivity type; second step for removing an inert coating from the active region to expose an active surface of the semiconductor substrate; third step for applying a gas containing an impurity component of the first conductivity type to the active surface to form an adsorption film containing the impurity component of the first conductivity type; fourth step for depositing a semiconductor layer on the adsorption film and the first field oxide film so as to form a channel stopper region composed of an impurity diffusion layer of the first conductivity type produced from the adsorption film at a boundary region between the semiconductor layer and the semiconductor substrate; fifth step for selectively thermally oxidizing the semiconductor layer except a portion disposed on the active region and on a periphery of the first field oxide film which surrounds the active region to form a second field oxide film to thereby provide a device region composed of the remaining portion of the semiconductor layer; sixth step for successively forming a gate insulating film and a gate electrode on the device region; and seventh step for introducing another impurity component of a second conductivity type through a mask of the gate electrode into the device region to form source and drain regions of the second conductivity type to thereby provide a channel region connecting between the source and drain regions under the gate electrode and above the channel stopper region.

Claim 26

A method of producing a semiconductor device, comprising: first step for forming a window portion surrounded by a first field oxide film on a surface of a semiconductor substrate of one conductivity type; second step for doping an impurity component into the semiconductor substrate through the window portion to form a well region of another conductivity type; third step for forming a semiconductor film to cover the window portion and the first field oxide film; fourth step for selectively thermally oxidizing the semiconductor film to form a second field oxide film to provide a device region composed of a remaining portion of the semiconductor film left on the window portion and on a periphery of the first field oxide film which surrounds the window portion; and fifth step for forming a semiconductor device on the device region.