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Patent EP0427187A2 successfully refreshed from Google Patents.
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EP0427187A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Microwave semiconductor device

Assignee: Sumitomo Electric Industries Ltd
•
Filing: 1990-11-06
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Granted: —
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Expires: 2010-11-06
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Abstract

Abstract A microwave semiconductor device comprises a plurality of active regions of Schottky barrier FET arranged on a single semiconductor substrate (11) in a common gate width direction, and gate electrodes (12) are linearly connected to each other. Side-gate electrodes (15) each formed by an ohmic metal are arranged on the semiconductor substrate (11) between adjacent active regions (11B). In this portion, a gate wiring layer (12B) is arranged so as to cross over each side-gate electrode (15). With this arrangement, a sufficient side gate effect on the entire FET having gate electrodes (12) connected to have a large length, can be obtained, and a threshold voltage can be controlled after manufacturing.

Inventors

  • 👤 Nobuo C/O Yokohama Works Of Sumitomo Elec. Shiga

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 14:16
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 85 words
A microwave semiconductor device comprising a plurality of active regions (11B) of Schottky barrier YET arranged on a single semiconductor substrate (11) in a common gate width direction, and gate electrodes (12) linearly connected to each other, wherein at least one side-gate electrode (15) formed by an ohmic metal is arranged at a portion of said microwave semiconductor substrate (11) between adjacent active regions (11b), and a gate wiring layer (12B) is arranged so as to cross above said side-gate electrode (15) at said portion.
Claim 2
Dependent Claim 85 words
A microwave semiconductor device comprising a plurality of active regions (11B) of Schottky barrier YET arranged on a single semiconductor substrate (11) in a common gate width direction, and gate electrodes (12) linearly connected to each other, wherein at least one side-gate electrode (15) formed by an ohmic metal is arranged at a portion of said microwave semiconductor substrate (11) between adjacent active regions (11b), and a gate wiring layer (12B) is arranged so as to cross above said side-gate electrode (15) at said portion.
Claim 3
Dependent Claim 22 words
The microwave semiconductor device according to claim 1, wherein at least two side-gate electrodes (15) are provided for each of said portion.
Claim 4
Dependent Claim 44 words
The microwave semiconductor device according to claim 1 or 2, wherein said side-gate electrodes (15) are connected to a control pad (15D) for applying a side-gate voltage for changing the threshold voltage of said FET in accordance with the magnitude of said side-gate voltage.
Claim 5
Dependent Claim 29 words
The microwave semiconductor device according to claim 1, 2, or 3, wherein said gate wiring layer (12B) is electrically insulated from said side-gate electrode(s) (15) by an interlayer (16).
Claim 6
Dependent Claim 27 words
The microwave semiconductor device according to claim 1, 2, or 3, wherein said gate wiring layer (12B) is electrically insulated from said side-gate electrode(s) (15) by air.
Claim 7
Dependent Claim 24 words
The microwave semiconductor device according to any preceding claim, wherein the side-gate electrodes (15) are arranged on lateral extensions in the gate width direction.

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