Patent EP0424858A2 successfully refreshed from Google Patents.
EP0424858A2
Expired / Lapsed
EP
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Semiconductor device and soldering method employable in manufacturing the same
Assignee: Mitsubishi Electric Corp
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Filing: 1990-10-22
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Granted: —
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Expires: 2010-10-22
Abstract
Abstract A semiconductor chip (27) is soldered on an electrode plate (24) with a thermal relaxation plate (40) therebetween. The thermal relaxation plate has a frame member (41) made of covar or invar and a plate member (42) made of copper. The plate member is inserted into the window space defined in the frame member and is united with the frame member.
Inventors
- 👤 Tetsuji C/O Mitsubishi Denki K.K. Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 18:28
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/257; H10W40/258; H10W70/00; H10W70/20; H10W70/24; H10W76/00; H10W76/40; H10W76/42; H10W76/47; H10W90/00; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/30; H10W72/351; H10W72/352; H10W72/381; H10W72/50; H10W72/531; H10W72/5363; H10W72/551; H10W72/552; H10W72/5524; H10W72/581; H10W72/851; H10W72/874; H10W72/884; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
186 words
A semiconductor device comprising; (a) a conductive member having electric conductivity; (b) a first solder layer provided on said conductive member; (c) a composite plate member provided on said first solder layer and comprising; (c-1) at least one frame member mae of a first material and having a window space therein; and (c-2) a plate member mae of a second material which is inserted into said window space and is united with said frame member so that said plate member is substantially in contact with said first solder member through a first opening of said window space; (d) a second solder member provided on said composite plate member so that said composite plate member is substantially in contact with said second solder member through a second opening of said window space; and (e) a semiconductor chip provided on said second solder layer; wherein said first material has a coefficient of thermal expansion equal to or less than three times a coefficient of thermal expansion of said semiconductor chip, and said second material is selected from the group consisting of copper, copper alloys, aluminum and aluminum alloys.
Claim 2
Dependent Claim
186 words
A semiconductor device comprising; (a) a conductive member having electric conductivity; (b) a first solder layer provided on said conductive member; (c) a composite plate member provided on said first solder layer and comprising; (c-1) at least one frame member mae of a first material and having a window space therein; and (c-2) a plate member mae of a second material which is inserted into said window space and is united with said frame member so that said plate member is substantially in contact with said first solder member through a first opening of said window space; (d) a second solder member provided on said composite plate member so that said composite plate member is substantially in contact with said second solder member through a second opening of said window space; and (e) a semiconductor chip provided on said second solder layer; wherein said first material has a coefficient of thermal expansion equal to or less than three times a coefficient of thermal expansion of said semiconductor chip, and said second material is selected from the group consisting of copper, copper alloys, aluminum and aluminum alloys.
Claim 3
Dependent Claim
31 words
The semiconductor device of claim 1, wherein; said frame member has only one window space; and said plate member is a flat plate member inserted into said only one window space.
Claim 4
Dependent Claim
116 words
The semiconductor device of claim 1, wherein; said at least one frame member comprises; (c-1a) a first frame member having a plurality of first windows therein; (c-1b) a second frame member having a plurality of second windows therein and arranged in parallel with said first frame member across a gap so that said plurality of first windows are aligned with said plurality of second windows, respectively; and said plate member comprises; (c-2a) a center portion inserted into said gap; (c-2b) a plurality of first convex portions projecting from said center portion into said plurality of first windows; and (c-2c) a plurality of second convex portions projecting from said center portion into said plurality of second windows.
Claim 5
Dependent Claim
31 words
A semiconductor device of claim 3. wherein; said plurality of first windows are arranged in a matrix array; and said plurality of second windows are also arranged in a matrix array.
Claim 6
Dependent Claim
20 words
The semiconductor device of claim 1, wherein; said first material is selected from the group consisting of invar and covar.
Claim 7
Dependent Claim
27 words
The semiconductor device of claim 5, wherein; nickel plating is applied to respective surfaces of said composite plate member facing to said first and second solder layers.
Claim 8
Dependent Claim
18 words
The semiconductor device of claim 1, wherein; said conductive member is an electrode plate for said semiconductor chip.
Claim 9
Dependent Claim
24 words
The semiconductor device of claim 7, further comprising; (f) a heat diffusion plate on which said conductive member is soldered through an insulating plate.
Claim 10
Dependent Claim
27 words
The semiconductor device of claim 8, wherein; said composite plate member serves as a thermal stress relaxation plate for relaxing a thermal stress in said semiconductor chip.
Claim 11
Dependent Claim
122 words
A thermal stress relaxation plate employable in a semiconductor device for relaxing a thermal stress in a semiconductor chip, comprising (a) at least one frame member made of a first material and having a window space therein; and (b) a plate member made of a second material which is inserted into said window space and is unitied with said frame member so that said plate member has two surfaces which expose at respective window openings of said window space; wherein said first material has coefficient of thermal expansion equal to or less than three times a coefficient of thermal expansion of said semiconductor chip, and said second material is selected from the group consisting of copper, copper alloys, aluminum and aluminum alloys.
Claim 12
Dependent Claim
122 words
A thermal stress relaxation plate employable in a semiconductor device for relaxing a thermal stress in a semiconductor chip, comprising (a) at least one frame member made of a first material and having a window space therein; and (b) a plate member made of a second material which is inserted into said window space and is unitied with said frame member so that said plate member has two surfaces which expose at respective window openings of said window space; wherein said first material has coefficient of thermal expansion equal to or less than three times a coefficient of thermal expansion of said semiconductor chip, and said second material is selected from the group consisting of copper, copper alloys, aluminum and aluminum alloys.
Claim 13
Dependent Claim
33 words
The thermal stress relaxation plate of claim 10, wherein; said frame member has only one window space; and said plate member is a flat plate member inserted into said only one window space.
Claim 14
Dependent Claim
118 words
The thermal stress relaxation plate of claim 10, wherein; said at least one frame member comprises; (a-1) a first frame member having a plurality of first windows therein; (a-2) a second frame member having a plurality of second windows therein and arranged in parallel with said first frame member across a gap so that said plurality of first windows are aligned with said plurality of second windows, respectively; and said plate member comprises; (b-1) a center portion inserted into said gap; (b-2) a plurality of first convex portions projecting from said center portion into said plurality of first windows; and (b-3) a plurality of second convex portions projecting from said center portion into said plurality of second windows.
Claim 15
Dependent Claim
22 words
The thermal stress relaxation plate of claim 12, wherein; said first material is selected from the group consisting of invar and covar.
Claim 16
Dependent Claim
24 words
The thermal stress relaxation plate of claim 13, wherein; nickel plating is applied to respective surfaces of said frame member and said plate member.
Claim 17
Independent Claim
161 words
A method of soldering a semiconductor chip on a prescribed position, comprising the steps of; (a) preparing a composite plate member comprising; at least one frame member made of a first material and having a window space therein; and a plate member made of a second material which is inserted into said window space and is united with said frame member so that said plate member exposes at first and second openings of said window space; wherein said first material has a coefficient of thermal expansion equal to or less than three times a coefficient of thermal expansion of said semiconductor chip, and said second material is selected from the group consisting of copper, copper alloys, aluminum and aluminum alloys; (b) soldering said composite plate member on said prescribed position while making said first opening face to said prescribed position; and (c) soldering said semiconductor chip on said composite plate member while making said semiconductor chip face to said second opening.
Claim 18
Independent Claim
161 words
A method of soldering a semiconductor chip on a prescribed position, comprising the steps of; (a) preparing a composite plate member comprising; at least one frame member made of a first material and having a window space therein; and a plate member made of a second material which is inserted into said window space and is united with said frame member so that said plate member exposes at first and second openings of said window space; wherein said first material has a coefficient of thermal expansion equal to or less than three times a coefficient of thermal expansion of said semiconductor chip, and said second material is selected from the group consisting of copper, copper alloys, aluminum and aluminum alloys; (b) soldering said composite plate member on said prescribed position while making said first opening face to said prescribed position; and (c) soldering said semiconductor chip on said composite plate member while making said semiconductor chip face to said second opening.
Claim 19
Dependent Claim
55 words
The method of claim 15, wherein; the step (a) includes the steps of; (a-1) preparing a frame made of said first material and a plate made of said second material; (a-2) inserting said plate into a window of said frame; and (a-3) rolling said plate together with said frame to obtain said composite plate member.
Claim 20
Dependent Claim
19 words
The method of claim 16, wherein; said first material is selected from the group consisting of invar and covar.
Claim 21
Dependent Claim
19 words
The semiconductor device of claim 17, wherein; nickel plating is applied to respective surfaces of said composite plate member.
References Cited (Backward Citations)
No citation records indexed.
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