EP0423463A1
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EP
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Annealing method for II-VI semiconductors
Assignee: Texas Instruments Inc
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Filing: 1990-08-23
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Granted: —
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Expires: 2010-08-23
Abstract
Abstract A three step annealing treatment for Hg 1- x Cd x Te includes a high temperature anneal to reduce excess tellurium, followed by an intermediate temperature anneal to reduce the supersaturation of metal vacancies, and lastly a low temperature anneal to reduce metal vacancies. The intermediate anneal reduces the metal vacancy concentration sufficiently that microvoids do not form from condensation of metal vacancies in desired portions of the Hg 1- x Cd x Te during the low temperature anneal. Alternate preferred embodiments include more than three steps and incremental cooling.
Inventors
- 👤 John H. Tregilgas
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 16:06
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; C; C30; C30B; C30B29/00; C30B29/10; C30B29/46; C30B29/48; C30B33/00; Y; Y10; Y10S; Y10S438/00; Y10S438/971
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
48 words
A method of Hg 1- x Cd x Te treatment, comprising the steps of: (a) annealing a body of Hg 1- x Cd x Te with a source of mercury at a plurality of successively lower temperatures; (b) said temperatures predetermined to deter microvoid formation in said body.
Claim 2
Independent Claim
48 words
A method of Hg 1- x Cd x Te treatment, comprising the steps of: (a) annealing a body of Hg 1- x Cd x Te with a source of mercury at a plurality of successively lower temperatures; (b) said temperatures predetermined to deter microvoid formation in said body.
Claim 3
Independent Claim
82 words
A method of Hg 1- x Cd x Te treatment, comprising the steps of: (a) annealing a body of Hg 1- x Cd x Te at a first temperature; (b) next annealing said body at a second temperature with a source of mercury, said second temperature at least 100° C lower than said first temperature; and (c) then annealing said body at a third temperature with a source of mercury, said third temperature at least 100° C lower than said second temperature.
Claim 4
Independent Claim
82 words
A method of Hg 1- x Cd x Te treatment, comprising the steps of: (a) annealing a body of Hg 1- x Cd x Te at a first temperature; (b) next annealing said body at a second temperature with a source of mercury, said second temperature at least 100° C lower than said first temperature; and (c) then annealing said body at a third temperature with a source of mercury, said third temperature at least 100° C lower than said second temperature.
Claim 5
Dependent Claim
19 words
The method of claim 2, wherein: (a) said body is divided into smaller pieces between steps (a) and (b).
Claim 6
Dependent Claim
19 words
The method of claim 2, wherein: (a) said body is divided into smaller peices between steps (b) and (c).
Claim 7
Independent Claim
72 words
A method of mercury-component semiconductor treatment, comprising the steps of: (a) annealing a body of mercury-component semiconductor at a first temperature in a mercury ambient; (b) next annealing said body at a second temperature in a mercury ambient, wherein the supersaturation of metal vacancies is less than 500; and (c) then annealing said body at a third temperature in a mercury ambient, wherein the supersaturation of metal vacancies is less than 1000.
Claim 8
Independent Claim
72 words
A method of mercury-component semiconductor treatment, comprising the steps of: (a) annealing a body of mercury-component semiconductor at a first temperature in a mercury ambient; (b) next annealing said body at a second temperature in a mercury ambient, wherein the supersaturation of metal vacancies is less than 500; and (c) then annealing said body at a third temperature in a mercury ambient, wherein the supersaturation of metal vacancies is less than 1000.
Claim 9
Dependent Claim
16 words
The method of claim 5, wherein: (a) the supersaturation in step (b) is less than 50.
Claim 10
Dependent Claim
16 words
The method of claim 5, wherein: (a) the supersaturation in step (c) is less than 300.
Claim 11
Dependent Claim
41 words
The method of claim 5, further comprising the step of: (a) lastly annealing said body at a fourth temperature in a mercury ambient, (b) wherein the supersaturation steps at each of the second, third, and fourth anneals is less than 200.
Claim 12
Dependent Claim
41 words
The method of claim 5, further comprising the step of: (a) lastly annealing said body at a fourth temperature in a mercury ambient, (b) wherein the supersaturation steps at each of the second, third, and fourth anneals is less than 200.
Claim 13
Dependent Claim
30 words
The method of claim 5, wherein: (a) said semiconductor is Hg 1- x Cd x Te; and (b) said semiconductor is maintained within the mercury and tellurium saturated phase limits.
Claim 14
Dependent Claim
41 words
The method of claim 10, further comprising the step of: (a) lastly annealing said body at a fourth temperature in a mercury ambient, (b) wherein the supersaturation steps at each of the second, third, and fourth anneals is less than 200.
Claim 15
Dependent Claim
18 words
A mercury-component semiconductor material, comprising: (a) solid state recrystallized mercury-component semiconductor material characterized by an absence of microvoids.
Claim 16
Dependent Claim
18 words
A mercury-component semiconductor material, comprising: (a) solid state recrystallized mercury-component semiconductor material characterized by an absence of microvoids.
References Cited (Backward Citations)
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