Patent EP0420595A2 successfully refreshed from Google Patents.
EP0420595A2
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EP
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Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride
Assignee: Canon Inc
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Filing: 1990-09-25
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Granted: —
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Expires: 2010-09-25
Abstract
Abstract By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.
Inventors
- 👤 Nobuo Mikoshiba
- 👤 Kazuo Tsubouchi
- 👤 Kazuya Masu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 13:55
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
143 words
A deposited film formation method comprising the steps of: a) arranging a substrate having an electron donative surface (A) and a non-electron donative surface (B) in a space for deposited film formation, b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride or higher and 450 °C or lower, thereby forming selectively an aluminum film or other metal film composed mainly of aluminum on said electron donative surface (A), and d) modifying the surface of said non-electron donative surface (B), and forming an aluminum film or other metal film composed mainly of aluminum on said surface (B) and/or on an aluminum film or other metal film composed mainly of aluminum selectively deposited.
Claim 2
Dependent Claim
143 words
A deposited film formation method comprising the steps of: a) arranging a substrate having an electron donative surface (A) and a non-electron donative surface (B) in a space for deposited film formation, b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride or higher and 450 °C or lower, thereby forming selectively an aluminum film or other metal film composed mainly of aluminum on said electron donative surface (A), and d) modifying the surface of said non-electron donative surface (B), and forming an aluminum film or other metal film composed mainly of aluminum on said surface (B) and/or on an aluminum film or other metal film composed mainly of aluminum selectively deposited.
Claim 3
Dependent Claim
42 words
A deposited film formation method according to claim 1, wherein step (b) comprises introducing a gas of an alkyl aluminum hydride, a gas containing silicon atom and hydrogen gas into said space for deposited film formation, thereby forming a film containing silicon.
Claim 4
Dependent Claim
20 words
A deposited film formation method according to claim 1 or 2, wherein said alkyl aluminum hydride is dimethy aluminum hydride.
Claim 5
Dependent Claim
20 words
A deposited film formation method according to claim 1 or 2, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 6
Dependent Claim
71 words
A deposited film formation method according to any preceding claim, wherein said surface modification comprises one or more of: a) formation of a nucleus containing free electrons onto said surface (B); b) formation of a thin film containing free electrons onto said surface (B): c) the step of treating said surface (B) with the use of a plasma; and d) the step of introducing a gas containing titanium and/or silicon atom.
Claim 7
Dependent Claim
41 words
A deposited film formation method according to any preceding claim, wherein said surface modification is carried out by elevating the temperature of said non-electron donative surface (B) higher than the temperature during said selective deposition of aluminum film optionally containing silicon.
Claim 8
Dependent Claim
37 words
A deposited film formation method according to any preceding, claim, wherein said surface modification includes the step of irradiating a light having greater energy than the optical forbidden gap width of the material constituting said surface (B).
Claim 9
Dependent Claim
30 words
A deposited film formation method according to any preceding claim, wherein said surface modfication includes the step of irradiating said surface (B) with ions and or with an electron beam.
Claim 10
Dependent Claim
58 words
A deposited film formation method according to any preceding claim, wherein the space for deposited film formation is in a deposited film formation device equipped with a plasma generation means; the surface of said non-electron donative surface (B) being modified by generating a plasma in said device while introducing said gas of alkyl aluminum hydride and hydrogen gas.
Claim 11
Dependent Claim
23 words
A deposited film formation method according to claim 9, wherein no plasma is generated during the selective formation step of said aluminum film.
Claim 12
Dependent Claim
38 words
A deposited film formation method according to claim 9, wherein a plasma is generated with a low power which does not deposit aluminum on said non-electron donative surface (B) during the selective formation step of said aluminum film.
Claim 13
Dependent Claim
139 words
A deposited film formation method comprising the steps of: a) arranging a substrate having an electron donative surface (A) and a non-electron donative surface (B) in a space for deposited film formation; b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation; c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride or higher and 450 °C or lower, thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A); d) forming an aluminum film or a metal film composed mainly of aluminum on said aluminum film or metal film composed mainly of aluminum and said surface (B) according to the deposited film formation step different from said step.
Claim 14
Dependent Claim
139 words
A deposited film formation method comprising the steps of: a) arranging a substrate having an electron donative surface (A) and a non-electron donative surface (B) in a space for deposited film formation; b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation; c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride or higher and 450 °C or lower, thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A); d) forming an aluminum film or a metal film composed mainly of aluminum on said aluminum film or metal film composed mainly of aluminum and said surface (B) according to the deposited film formation step different from said step.
Claim 15
Dependent Claim
36 words
A deposited film formation method according to claim 12, wherein step (b) comprises introducing a gas of an alkyl aluminum hydride, a gas containing silicon atom and hydrogen gas into said space for deposited film formation.
Claim 16
Dependent Claim
25 words
A deposited film formation method according to claim 12 or 13, wherein no plasma is generated during the selective formation step of said aluminum film.
Claim 17
Dependent Claim
42 words
A deposited film formation method according to any of claims 12 to 14, wherein a plasma is generated with a low power which does not deposit aluminum on said non-electron donative surface (B) during the selective formation step of said aluminum film.
Claim 18
Dependent Claim
22 words
A deposited film formation method according to any of claims 12 to 15, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 19
Dependent Claim
38 words
A deposition method in which a gas of organic aluminum hydride and hydrogen and optionally containing silicon is brought to a substrate having a non-electron donative surface, said surface being modified to allow aluminum and optionally silicon deposition.
Claim 20
Dependent Claim
38 words
A deposition method in which a gas of organic aluminum hydride and hydrogen and optionally containing silicon is brought to a substrate having a non-electron donative surface, said surface being modified to allow aluminum and optionally silicon deposition.
References Cited (Backward Citations)
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