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Patent EP0417851A2 successfully refreshed from Google Patents.
EP0417851A2
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Two-terminal non-linear devices and their method of fabrication
Assignee: Philips Electronics UK Ltd
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Filing: 1990-09-10
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Granted: —
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Expires: 2010-09-10
Abstract
Abstract A method of fabricating small sized, physically discrete, two-terminal non-linear devices in bulk comprising forming on the surface of a temporary support (10;24) a multiple layer formation consisting of a series of thin film layers (12,14,16; 25,26,27,28) of selected materials and uniform thicknesses constituting a diode structure, for example a MIM type or p-n-p punch-through type structure, scribing the multiple layer formation in a regular pattern to define portions, (20;30), and thereafter removing the support and separating the portions into physically discrete elements, each of which forms an individual non-linear device. Large numbers of devices, typically around 20µm across, are produced simultaneously each exhibiting substantially identical physical and electrical properties.
Inventors
- 👤 John Martin Shannon
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 22:18
CPC Classifications
H; H10; H10P; H10P54/00; H10N; H10N70/00
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
63 words
A method of fabricating two-terminal non-linear devices comprising the steps of forming on the surface of a support a multiple layer formation comprising a series of thin film layers of selected materials constituting a diode structure, scribing the multiple layer formation to define portions thereof, and thereafter removing the support and physically separating the portions into discrete elements each constituting a non-linear device.
Claim 2
Independent Claim
63 words
A method of fabricating two-terminal non-linear devices comprising the steps of forming on the surface of a support a multiple layer formation comprising a series of thin film layers of selected materials constituting a diode structure, scribing the multiple layer formation to define portions thereof, and thereafter removing the support and physically separating the portions into discrete elements each constituting a non-linear device.
Claim 3
Dependent Claim
24 words
A method according to Claim 1, characterised in that the multiple layer formation is scribed completely through its thickness to define individual portions thereof.
Claim 4
Dependent Claim
22 words
A method according to Claim 1, characterised in that the multiple layer formation is scribed through a part only of its thickness.
Claim 5
Dependent Claim
33 words
A method according to Claim 3, characterised in that following the removal of the support the multiple layer formation is subjected to a rolling operation to separate the portions into physically discrete elements.
Claim 6
Independent Claim
19 words
A method according to any one of the preceding claims, characterised in that the support is removed by etching.
Claim 7
Independent Claim
27 words
A method according to any one of the preceding claims, characterised in that the materials of the thin film layers are selected to provide a MIM structure.
Claim 8
Dependent Claim
44 words
A method according to Claim 6, characterised in that the first formed layer of the multiple layer formation comprises a deposited layer of anodisable metal and in that following deposition of this layer an anodisation operation is performed to produce an insulative surface layer.
Claim 9
Dependent Claim
26 words
A method according to Claim 7, characterised in that the first formed layer comprises tantalum which is anodised to form a surface layer of tantalum pentoxide.
Claim 10
Dependent Claim
19 words
A method according to Claim 6, characterised in that the thin film layers are provided as separately deposited layers.
Claim 11
Independent Claim
20 words
A method according to any one of Claims 6 to 9, characterised in that the support comprises a polyimide material.
Claim 12
Independent Claim
33 words
A method according to any one of Claims 1 to 5, characterised in that the materials of the thin film layers are selected to provide a p-n-p, n-p-n, p-i-p or n-i-n diode structure.
Claim 13
Dependent Claim
30 words
A method according to Claim 11, characterised in that the support comprises a single crystal semiconductor wafer and in that the thin film layers are formed using an epitaxial process.
Claim 14
Dependent Claim
17 words
A method according to Claim 11, characterised in that the thin film layers comprise amorphous semiconductor material.
References Cited (Backward Citations)
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