Patent EP0413348A2 successfully refreshed from Google Patents.
EP0413348A2
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EP
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Semiconductor integrated circuit
Assignee: Mitsubishi Electric Corp
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Filing: 1990-08-17
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Granted: —
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Expires: 2010-08-17
Abstract
Abstract Inductive structures having low parasitic capacitances for direct integration in semiconductor integrated circuits. In one embodiment, a generally planar spiral winding (2) is disposed on the surface of a substrate (1). An electrical connection to the internal end (4) of the spiral (2) is made through electrically conducting vias (21,23) passing through the substrate (1). The spiral (2) may be spaced from a substrate surface by a plurality of spaced apart electrically conductive posts (25) having a staggered arrangement between adjacent windings of the spiral (2). A transformer includes two windings disposed on top of each other on a semiconductor substrate (1) and separated by an electrically insulating film (33). The windings have a common central opening in which a magnetic material (36) is disposed to improve the inductive coupling between the windings. The transformer may include two helical windings (47,48), one surrounding another, each formed with vias (51,56) and electrical conductors (52,53;57,58) the inner winding (47) being formed in and on a semiconductor substrate (1) and the outer winding (48) being formed on insulating films (41,42) disposed on the substrate (1) and extending through the films (41,42) and substrate (1). A variable inductor includes inductively coupled spiral windings (62,2) separated by an insulating film (61) and a current control (68) for controlling the current through one of the spirals and, thereby, the effective inductance of the other spiral.
Inventors
- 👤 Naoto C/O Mitsubishi Denki K.K. Andoh
- 👤 Akira C/O Mitsubishi Denki K.K. Inoue
- 👤 Yasuharu C/O Mitsubishi Denki K.K. Nakajima
- 👤 Kazuhito C/O Mitsubishi Denki K.K. Nakahara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 11:09
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/20; H01; H01F; H01F17/00; H01F17/0006; H01F17/0033; H01F21/00; H01F21/02; H01F21/08; H01F27/00; H01F27/28; H01F27/2804; H10W; H10W44/00; H10W44/501; H01F2017/004; H01F2017/0046; H01F2017/0086
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
178 words
An inductive structure integrable with a semiconductor integrated circuit, characterized by: an electrically insulating substrate (1) having opposed first and second surfaces; an electrical conductor disposed in a first spiral (2) on the first surface of the substrate (1), the spiral (2) including an external end (3) disposed outside the spiral (2) as a first lead an internal end (4) disposed within the spiral (2); first and second electrically conducting vias (21,23) passing through the substrate (1) from the first to the second surface, the first via (21) intersecting and establishing an electrical connection to the internal end (4) of the first spiral (2), the second via (23) lying outside the spiral (2); an electrically conducting connector (22) disposed on the second surface of the substrate (1) electrically connecting the first and second vias (21,23); and a second lead (6) disposed on the first surface of the substrate (1) outside the first spiral electrically connected to the second via (23) whereby electrical connections to the inductive structure can be made on the first surface of the substrate (1).
Claim 2
Dependent Claim
178 words
An inductive structure integrable with a semiconductor integrated circuit, characterized by: an electrically insulating substrate (1) having opposed first and second surfaces; an electrical conductor disposed in a first spiral (2) on the first surface of the substrate (1), the spiral (2) including an external end (3) disposed outside the spiral (2) as a first lead an internal end (4) disposed within the spiral (2); first and second electrically conducting vias (21,23) passing through the substrate (1) from the first to the second surface, the first via (21) intersecting and establishing an electrical connection to the internal end (4) of the first spiral (2), the second via (23) lying outside the spiral (2); an electrically conducting connector (22) disposed on the second surface of the substrate (1) electrically connecting the first and second vias (21,23); and a second lead (6) disposed on the first surface of the substrate (1) outside the first spiral electrically connected to the second via (23) whereby electrical connections to the inductive structure can be made on the first surface of the substrate (1).
Claim 3
Dependent Claim
30 words
The inductive structure of claim 1, characterized in that the electrically conducting connector (22) disposed on the second surface of the substrate (1) is disposed in a second spiral (12).
Claim 4
Dependent Claim
30 words
The inductive structure of claim 2, characterized in that the second spiral (12), when projected onto the first surface of the substrate (1), is interleaved with the first spiral (2).
Claim 5
Dependent Claim
17 words
The inductive structure of claim 1, characterized in that the substrate (1) is an electrically insulating semiconductor.
Claim 6
Dependent Claim
24 words
The inductive structure of claim 4, characterized in that the substrate (1) is chosen from the group consisting of gallium arsenide and indium phosphide.
Claim 7
Dependent Claim
122 words
An inductive structure integrable with a semiconductor integrated circuit, characterized by: an electrically insulating substrate (1) having opposed first and second surfaces; an electrical conductor disposed in a spiral (2) spaced from the first surface of the substrate (1), the spiral (2) including an external end (3) disposed outside the spiral (2) as a first lead and an internal end (4) disposed within the spiral (2), said first spiral (2) including at least two windings adjacent each other; and a plurality of electrically conducting, spaced apart posts (25) disposed on the first surface of the substrate (1) contacting and supporting the first spiral (2) wherein each post (25) supporting one winding is disposed intermediate two adjacent posts (25) supporting an adjacent winding.
Claim 8
Dependent Claim
122 words
An inductive structure integrable with a semiconductor integrated circuit, characterized by: an electrically insulating substrate (1) having opposed first and second surfaces; an electrical conductor disposed in a spiral (2) spaced from the first surface of the substrate (1), the spiral (2) including an external end (3) disposed outside the spiral (2) as a first lead and an internal end (4) disposed within the spiral (2), said first spiral (2) including at least two windings adjacent each other; and a plurality of electrically conducting, spaced apart posts (25) disposed on the first surface of the substrate (1) contacting and supporting the first spiral (2) wherein each post (25) supporting one winding is disposed intermediate two adjacent posts (25) supporting an adjacent winding.
Claim 9
Dependent Claim
122 words
The inductive structure of claim 6, further characterized by first and second electrically conducting vias (21,23) passing through the substrate (1) from the first to the second surface, the first via (21) intersecting and establishing an electrical connection to the internal end (4) of the spiral (2); the second via (23) lying outside the spiral (2); an electrically conducting connector (22) disposed on the second surface of the substrate (1) electrically connecting the first and second vias (21, 23); and a second lead (6) disposed on the first surface of the substrate (1) outside the spiral (2) electrically connected to the second via (23) whereby electrical connections to the inductive structure can be made on the first surface of the substrate (1).
Claim 10
Dependent Claim
17 words
The inductive structure of claim 6, characterized in that the substrate (1) is an electrically insulating semiconductor.
Claim 11
Dependent Claim
22 words
The inductive structure of claim 8, characterized in that the substrate (1) from the group consisting of gallium arsenide and indium phosphide.
Claim 12
Dependent Claim
125 words
A transformer integrable with a semiconductor integrated circuit, characterized by : an electrically insulating semiconductor substrate (1) having a first surface; a first electrical conductor (28) disposed on the first surface of the substrate (1) comprising a first winding having a first pair of leads (32); a first electrically insulating film (33) disposed on the first electrical conductor (28); a second electrical conductor (34) disposed on the electrically insulating film (33) comprising a second winding having a second pair of leads (35), the first and second windings and the electrically insulating film including a common central opening; and a magnetic material (36) disposed on the surface of the substrate (1) in the common central opening increasing the inductive coupling between the first and second windings.
Claim 13
Dependent Claim
125 words
A transformer integrable with a semiconductor integrated circuit, characterized by : an electrically insulating semiconductor substrate (1) having a first surface; a first electrical conductor (28) disposed on the first surface of the substrate (1) comprising a first winding having a first pair of leads (32); a first electrically insulating film (33) disposed on the first electrical conductor (28); a second electrical conductor (34) disposed on the electrically insulating film (33) comprising a second winding having a second pair of leads (35), the first and second windings and the electrically insulating film including a common central opening; and a magnetic material (36) disposed on the surface of the substrate (1) in the common central opening increasing the inductive coupling between the first and second windings.
Claim 14
Dependent Claim
15 words
The transformer of claim 10, characterized in that the magnetic material (36) a ferrite body.
Claim 15
Dependent Claim
23 words
The transformer of claim 10, characterized in that the electrically insulating film (33) is chosen from the group consisting of SiN and SiON.
Claim 16
Dependent Claim
34 words
The transformer of claim 10, characterized in that the pairs of leads (32,35) of the first and second windings are oriented in different directions to minimize the coupling between the respective pairs of leads.
Claim 17
Dependent Claim
23 words
The transformer of claim 10, characterized in that the substrate (1) is chosen from the group consisting of gallium arsenide and indium phosphide.
Claim 18
Dependent Claim
80 words
The transformer of claim 10, further characterized by a second electrically insulating flm (37) disposed on the second electrical conductor (34) and a third electrical conductor (38) disposed on the second electrically insulating film (37) opposite the second electrical conductor (34) comprising a third winding and a third pair of leads (39), the second electrically insulating film (37) and the third electrical conductor (38) having respective central openings aligned with the common central opening of the first and second windings.
Claim 19
Dependent Claim
290 words
A transformer integrable with a semiconductor integrated circuit characterized by: an electrically insulating substrate (1) having opposed first (43) and second surfaces (44); a plurality of first electrically conducting vias (51) passing through the substrate (1) from the first (43) to the second surface (44); at least one first (53) and second (52) electrical conductor respectively disposed on the first (43) and second (44) surfaces of the substrate (1), each of the first and second conductors (53, 52) electrically connecting two vias (51) to form a first helical winding (47) comprising the first (53) and second (52) electrical conductors and the first vias (51); first and second electrically conducting leads (54) disposed on at least one of the first and second surfaces (43,44) of the substrate (1) respectively electrically connected to one of the first vias (51); first (41) and second (42) electrically insulating films disposed on the first (43) and second (44) surfaces of the substrate (1), respectively, at least partially covering the first (53) and second (52) electrical conductors and first and second leads (54); a plurality of second electrically conducting vias (56) passing through the first and second electrically insulating films (41,42) and the electrically insulating substrate (1); at least one third (58) and fourth (57) electrical conductor respectively disposed on the first and second electrically insulating films (41,42), each of the third and fourth conductors (58,57) electrically connecting two of the second vias (56) to form a second helical winding (48) comprising the third and fourth electrical conductors (58,57) and the second vias (56); and third and fourth electrically conducting leads (58a) disposed on at least one of the first and second electrically insulating films (41,42) respectively electrically connected to one of the second vias (56).
Claim 20
Dependent Claim
290 words
A transformer integrable with a semiconductor integrated circuit characterized by: an electrically insulating substrate (1) having opposed first (43) and second surfaces (44); a plurality of first electrically conducting vias (51) passing through the substrate (1) from the first (43) to the second surface (44); at least one first (53) and second (52) electrical conductor respectively disposed on the first (43) and second (44) surfaces of the substrate (1), each of the first and second conductors (53, 52) electrically connecting two vias (51) to form a first helical winding (47) comprising the first (53) and second (52) electrical conductors and the first vias (51); first and second electrically conducting leads (54) disposed on at least one of the first and second surfaces (43,44) of the substrate (1) respectively electrically connected to one of the first vias (51); first (41) and second (42) electrically insulating films disposed on the first (43) and second (44) surfaces of the substrate (1), respectively, at least partially covering the first (53) and second (52) electrical conductors and first and second leads (54); a plurality of second electrically conducting vias (56) passing through the first and second electrically insulating films (41,42) and the electrically insulating substrate (1); at least one third (58) and fourth (57) electrical conductor respectively disposed on the first and second electrically insulating films (41,42), each of the third and fourth conductors (58,57) electrically connecting two of the second vias (56) to form a second helical winding (48) comprising the third and fourth electrical conductors (58,57) and the second vias (56); and third and fourth electrically conducting leads (58a) disposed on at least one of the first and second electrically insulating films (41,42) respectively electrically connected to one of the second vias (56).
Claim 21
Dependent Claim
18 words
The transformer of claim 16, characterized in that the electrically insulating substrate (1) is an electrically insulating semiconductor.
Claim 22
Dependent Claim
23 words
The transformer of claim 16, characterized in that the substrate (1) is chosen from the group consisting of gallium arsenide and indium phosphide.
Claim 23
Dependent Claim
19 words
The transformer of claim 16, characterized in that the second helical winding (48) surrounds the first helical winding (47).
Claim 24
Dependent Claim
31 words
The transformer of claim 16, further characterized by a magnetic material (36) disposed within the first helical winding (47) increasing the inductive coupling between the first and second helical windings (47,48).
Claim 25
Dependent Claim
16 words
The transformer of claim 20, characterized in that the magnetic material (36) is a ferrite body.
Claim 26
Dependent Claim
95 words
A variable inductance element integrable with a semiconductor integrated circuit characterized by: an electrically insulating substrate (1) having opposed first and second surfaces; an electrical conductor disposed in a first spiral (62) on the first surface of the substrate (1); means (68) for producing and controlling an electrical current flow through the first spiral (62); an electrically insulating film (61) disposed on the first surface and the first spiral (62); and a second electrical conductor disposed in a second spiral (2) on the electrically insulating film (61) and inductively coupled to the first spiral (62).
Claim 27
Dependent Claim
95 words
A variable inductance element integrable with a semiconductor integrated circuit characterized by: an electrically insulating substrate (1) having opposed first and second surfaces; an electrical conductor disposed in a first spiral (62) on the first surface of the substrate (1); means (68) for producing and controlling an electrical current flow through the first spiral (62); an electrically insulating film (61) disposed on the first surface and the first spiral (62); and a second electrical conductor disposed in a second spiral (2) on the electrically insulating film (61) and inductively coupled to the first spiral (62).
Claim 28
Dependent Claim
18 words
The variable inductance element of claim 22, characterized in that the substrate (1) is an electrically insulating semiconductor.
Claim 29
Dependent Claim
25 words
The variable inductance element of claim 23, characterized in that the substrate (1) is chosen from the group consisting of gallium arsenide and indium phosphide.
Claim 30
Dependent Claim
173 words
A variable inductance element integrable with a semiconductor integrated circuit, characterized by: an electrically insulating substrate (1) having opposed first and second surfaces; an electrical conductor disposed in a first spiral (62) on the first surface of the substrate (1); an electrically insulating film (61) disposed on the first surface and the first spiral (62); a second electrical conductor disposed in a second spiral (2) on the electrically insulating film (61) and inductively coupled to the first spiral (62), each of the first and second spirals (62,2) having respective first and second ends; an electrically conducting first via penetrating the electrically insulating film (61) electrically connecting the first end of the first spiral (62) to the first end of the second spiral (2); and an electrically conducting ground plane (8) disposed on the second surface of the substrate (1) and a second electrically conducting via (72) passing through the substrate (1) from the first to the second surface electrically connecting the second end of the first spiral (62) to the ground plane (8).
Claim 31
Dependent Claim
173 words
A variable inductance element integrable with a semiconductor integrated circuit, characterized by: an electrically insulating substrate (1) having opposed first and second surfaces; an electrical conductor disposed in a first spiral (62) on the first surface of the substrate (1); an electrically insulating film (61) disposed on the first surface and the first spiral (62); a second electrical conductor disposed in a second spiral (2) on the electrically insulating film (61) and inductively coupled to the first spiral (62), each of the first and second spirals (62,2) having respective first and second ends; an electrically conducting first via penetrating the electrically insulating film (61) electrically connecting the first end of the first spiral (62) to the first end of the second spiral (2); and an electrically conducting ground plane (8) disposed on the second surface of the substrate (1) and a second electrically conducting via (72) passing through the substrate (1) from the first to the second surface electrically connecting the second end of the first spiral (62) to the ground plane (8).
Claim 32
Dependent Claim
18 words
The variable inductance element of claim 25, characterized in that the substrate (1) is an electrically insulating semiconductor.
Claim 33
Dependent Claim
25 words
The variable inductance element of claim 26, characterized in that the substrate (1) is chosen from the group consisting of gallium arsenide and indium phosphide.
Claim 34
Dependent Claim
55 words
The variable inductance element of claim 25, further characterized by means (70) for controlling the flow of current through the second spiral (2) serially connected to the first end (5) of the second spiral (2) and an electrical termination (71) connected between the second end of the first spiral (62) and the ground plane (8).
Claim 35
Dependent Claim
27 words
The variable inductance element of claim 28, characterized in that the means (70) for controlling is selected from the group consisting of an attenuator and an amplifier.
References Cited (Backward Citations)
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