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EP0412567A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Integrable transistor switching stage with adjustable switching threshold

Assignee: Siemens AG
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Filing: 1990-08-10
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Granted: —
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Expires: 2010-08-10
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Abstract

Abstract An integratable transistor switching stage with a switching threshold dependent on a predeterminable reference voltage value is formed by a CMOS invertor which is connected in series between two mutually complementary load-current field-effect transistors (Q1, Q2). The gate electrodes of the two load current field-effect transistors (Q1, Q2) are connected to one another and are supplied with a reference voltage (VREF). An adjustment range, in which the transfer characteristic of the transistor switching stage exhibits an advantageous variation, can be predetermined for the switching threshold by dimensioning the transistors. <IMAGE>

Inventors

  • 👤 Claude Dipl.-Ing. Barré

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 10:36
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/0175; H03K19/0185; H03K19/018507; H03K19/018521; H03K19/0021; H03K19/0027

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