Patent EP0410385A2 successfully refreshed from Google Patents.
EP0410385A2
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EP
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Method of manufacturing a semiconductor device comprising a T-gate
Assignee: Sony Corp
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Filing: 1990-07-24
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Granted: —
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Expires: 2010-07-24
Abstract
Abstract A method for manufacturing a semiconductor device, comprising the steps of forming a first resist layer (4), an intermediate layer (5) and a second resist layer (6) sequentially on a substrate (1); forming an aperture by removing a portion of the second resist layer (6) where a T-shaped gate (13) is to be later formed; over-etching a portion of the intermediate layer (5) opposed to the aperture thereby forming in the intermediate layer (5) an aperture larger than the first-mentioned aperture; and forming, in the first resist layer (4), an aperture which is smaller than the aperture in the second resist layer (6) which is positioned inside thereof. Due to the combination of such successive steps, the lift-off process required to form a desires T-shaped gate (13) can be substantially improved.
Inventors
- 👤 Junichiro C/O Sony Corporation Kobayashi
- 👤 Shigeru C/O Sony Corporation Hiramatsu
- 👤 Hidemi C/O Sony Corporation Takakuwa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 15:14
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/80; H10D30/87; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; Y; Y10; Y10S; Y10S148/00; Y10S148/10; Y10S148/143
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
112 words
A method for manufacturing a semiconductor device, characterized by the following steps: sequentially forming a first resist layer (4), an intermediate layer (5) and a second resist layer (6) on a substrate (1); forming an aperture by removing a portion of said second resist layer (6) where a T-shaped gate (13) is to be later formed; over-etching a portion of said intermediate layer (5) which is opposed to said aperture thereby forming in said intermediate layer (5) an aperture larger than the first-mentioned aperture; and forming in said first resist layer (4) an aperture which is smaller than the aperture in said second resist layer (6) and which is positioned inside thereof.
Claim 2
Independent Claim
112 words
A method for manufacturing a semiconductor device, characterized by the following steps: sequentially forming a first resist layer (4), an intermediate layer (5) and a second resist layer (6) on a substrate (1); forming an aperture by removing a portion of said second resist layer (6) where a T-shaped gate (13) is to be later formed; over-etching a portion of said intermediate layer (5) which is opposed to said aperture thereby forming in said intermediate layer (5) an aperture larger than the first-mentioned aperture; and forming in said first resist layer (4) an aperture which is smaller than the aperture in said second resist layer (6) and which is positioned inside thereof.
Claim 3
Dependent Claim
59 words
A method as claimed in claim 1, characterized by forming a T-shaped gate (13) in said apertures of said first and second resist layers (4, 6), and lifting off from said substrate (1) said first resist layer (4), said intermediate layer (5) and said second resist layer (6) so that said T-shaped gate (13) remains on said substrate (1).
Claim 4
Independent Claim
20 words
A method as claimed in claims 1 or 2, characterised in that said intermediate layer (5) is formed of metal.
Claim 5
Dependent Claim
18 words
A method as claimed in claim 3, characterized in that said intermediate layer (5) is made of aluminum.
Claim 6
Independent Claim
22 words
A method as claimed in claims 1 or 2, characterised in that said intermediate layer (5) is formed of a non-metallic material.
Claim 7
Independent Claim
121 words
A method for manufacturing a semiconductor device, characterized by the following steps: sequentially forming a first resist layer (4), an intermediate layer (5) and a second resist layer (6) on a substrate (1); exposing said first and second resist layers (4, 6), forming an aperture by removing a portion of said second resist layer (6) where a T-shaped gate (13) is to be later formed; over-etching a portion of said intermediate layer (5) which is opposed to said aperture thereby forming in said intermediate layer (5) an aperture larger than the first-mentioned aperture; and forming in said first resist layer (4) an aperture which is smaller than the aperture in said second resist layer (6) and which is positioned inside thereof.
Claim 8
Independent Claim
121 words
A method for manufacturing a semiconductor device, characterized by the following steps: sequentially forming a first resist layer (4), an intermediate layer (5) and a second resist layer (6) on a substrate (1); exposing said first and second resist layers (4, 6), forming an aperture by removing a portion of said second resist layer (6) where a T-shaped gate (13) is to be later formed; over-etching a portion of said intermediate layer (5) which is opposed to said aperture thereby forming in said intermediate layer (5) an aperture larger than the first-mentioned aperture; and forming in said first resist layer (4) an aperture which is smaller than the aperture in said second resist layer (6) and which is positioned inside thereof.
Claim 9
Dependent Claim
59 words
A method as claimed in claim 6, characterized by forming a T-shaped gate (13) in said apertures of said first and second resist layers (4, 6), and lifting off from said substrate (1) said first resist layer (4), said intermediate layer (5) and said second resist layer (6) so that said T-shaped gate (13) remains on said substrate (1).
Claim 10
Independent Claim
20 words
A method as claimed in claims 6 or 7, characterized in that said intermediate layer (5) is formed of metal.
Claim 11
Dependent Claim
16 words
A method as claimed in claim 8, wherein said intermediate layer (5) is formed of aluminum.
Claim 12
Independent Claim
22 words
A method as claimed in claims 6 or 7, characterized in that said intermediate layer (5) is formed of a non-metallic material.
References Cited (Backward Citations)
No citation records indexed.
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