Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
93 words
A nonvolatile semiconductor memory device having memory cells in which a control gate is stacked on a floating gate through an insulating film, comprising: a plurality of redundant memory cells for compensating defective memory cells; and a transistor for selecting said redundant memory cells; said redundant memory cells and said transistor for selecting said redundant memory cells formed by a nonvolatile memory transistor, and said transistor for selecting said redundant memory cells having a structure in which the upper surface and side walls of a floating gate are covered by a control gate.
Claim 2
Dependent Claim
93 words
A nonvolatile semiconductor memory device having memory cells in which a control gate is stacked on a floating gate through an insulating film, comprising: a plurality of redundant memory cells for compensating defective memory cells; and a transistor for selecting said redundant memory cells; said redundant memory cells and said transistor for selecting said redundant memory cells formed by a nonvolatile memory transistor, and said transistor for selecting said redundant memory cells having a structure in which the upper surface and side walls of a floating gate are covered by a control gate.
Claim 3
Dependent Claim
26 words
A nonvolatile semiconductor memory device according to claim 1, wherein a redundant bit programming circuit is formed by said transistor for selecting said redundant memory cells.
Claim 4
Dependent Claim
35 words
A nonvolatile semiconductor memory device according to claims 1 or 2, wherein said control gate of said transistor for selecting said redundant memory cells is formed of a polycrystalline silicon film or a polycide film.
Claim 5
Dependent Claim
101 words
A nonvolatile semiconductor memory device having memory cells in which a control gate is stacked on a floating gate through an insulating film, comprising: a plurality of redundant memory cells for compensating defective memory cells; and a transistor for selecting said redundant memory cells, said redundant memory cells and said transistor for selecting said redundant memory cells formed by a nonvolatile memory transistor, and said transistor for selecting said redundant memory cells having a structure in which a floating gate and a control gate are covered by a light shielding film and an antireflection film formed under said light shielding film.
Claim 6
Dependent Claim
101 words
A nonvolatile semiconductor memory device having memory cells in which a control gate is stacked on a floating gate through an insulating film, comprising: a plurality of redundant memory cells for compensating defective memory cells; and a transistor for selecting said redundant memory cells, said redundant memory cells and said transistor for selecting said redundant memory cells formed by a nonvolatile memory transistor, and said transistor for selecting said redundant memory cells having a structure in which a floating gate and a control gate are covered by a light shielding film and an antireflection film formed under said light shielding film.
Claim 7
Dependent Claim
25 words
A nonvolatile semiconductor memory device according to claim 4, wherein said light shielding film is formed of an aluminum film or an aluminum alloy film.
Claim 8
Dependent Claim
35 words
A nonvolatile semiconductor memory device according to claims 4 or 5, wherein said antireflection film is formed of a polycrystalline silicon film, a titanium nitride film, a metal silicide film, or an amorphous silicon film.
Claim 9
Dependent Claim
69 words
A nonvolatile semiconductor memory device having memory cells in which a control gate is stacked on a floating gate through an insulating film, comprising: a phospho-silicate glass film which is formed on the side walls of said floating gate and said control gate; and a silicon nitride film and an arseno-silicate glass film. or a boro-phospho-silicate glass film which are sequentially formed so as to cover said control gate.
Claim 10
Dependent Claim
69 words
A nonvolatile semiconductor memory device having memory cells in which a control gate is stacked on a floating gate through an insulating film, comprising: a phospho-silicate glass film which is formed on the side walls of said floating gate and said control gate; and a silicon nitride film and an arseno-silicate glass film. or a boro-phospho-silicate glass film which are sequentially formed so as to cover said control gate.
Claim 11
Dependent Claim
33 words
A nonvolatile semiconductor memory device according to claim 7, wherein contact holes for a source region and a drain region of a nonvolatile memory transistor are formed away from said phospho-silicate glass film.
Claim 12
Independent Claim
95 words
A method of manufacturing a nonvolatile semiconductor memory device in which a control gate is stacked on a floating gate through an insulating film, comprising the steps of: forming said floating gate made of a semiconductor layer and said control gate made of a layer containing a refractory metal stacked on said floating gate; covering said floating gate and said control gate by a film which prevents a diffusion of metal atoms and transmits oxygen; and forming a semiconductor oxide film on side walls of at least said floating gate by executing a thermal oxidation.
Claim 13
Independent Claim
95 words
A method of manufacturing a nonvolatile semiconductor memory device in which a control gate is stacked on a floating gate through an insulating film, comprising the steps of: forming said floating gate made of a semiconductor layer and said control gate made of a layer containing a refractory metal stacked on said floating gate; covering said floating gate and said control gate by a film which prevents a diffusion of metal atoms and transmits oxygen; and forming a semiconductor oxide film on side walls of at least said floating gate by executing a thermal oxidation.
Claim 14
Dependent Claim
29 words
A method of manufacturing a nonvolatile semiconductor memory device according to claim 9, wherein said layer containing a refractory metal is a polycide film or a refractory metal film.
Claim 15
Dependent Claim
46 words
A method of manufacturing a nonvolatile semiconductor memory device according to claim 9 ro 10, wherein said film which prevents a diffusion of metal atoms and transmits oxygen is a silicon dioxide film, a phospho-silicate glass film, an arseno-silicate glass film or a boro-phospho-silicate glass film.
Claim 16
Dependent Claim
28 words
A method of manufacturing a nonvolatile semiconductor memory device according to claim 9 wherein said semiconductor oxide film is a silicon dioxide film formed by a thermal oxidation.