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Patent EP0408419A1 successfully refreshed from Google Patents.
EP0408419A1
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EP
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Use of an electrically programmable MOS cell to implement a fuse
Assignee: Gemplus SA
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Filing: 1990-06-29
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Granted: —
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Expires: 2010-06-29
Abstract
Abstract The MOS fuse with oxide breakdown uses as base a MOS cell which is electrically programmable via the tunnel effect and accumulation of charge on a grid; this cell is converted into a fuse by providing for, when the fuse is to be blown, the application of an intense field, greater than the oxide breakdown threshold, in the tunnel window (F): breakdown is thus irreversible. <??>The invention applies in particular to fuses intended for the integrated circuits of memory cards. <IMAGE>
Inventors
- 👤 Jacek Kowalski
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 07:41
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/14; G11C17/16; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0416; H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; Y; Y10; Y10S; Y10S257/00; Y10S257/922
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US4203158A
Cited
US4203158B1
Cited
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