Patent EP0407168A2 successfully refreshed from Google Patents.
EP0407168A2
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EP
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A thin film semiconductor array device
Assignee: Sharp Corp
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Filing: 1990-07-04
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Granted: —
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Expires: 2010-07-04
Abstract
Abstract The production of a thin film semiconductor laser array device having a gate wiring on an insulated substrate. The gate wiring has an inner gate wiring having a first metal layer formed on the insulated substrate and a second metal layer whose etching speed is faster than that of the first metal layer, the first metal layer and the second metal layer being overlapped so as to constitute a dual structure, and an outer gate wiring covering the inner gate wiring.
Inventors
- 👤 Makoto Miyago
- 👤 Hiroshi Oka
- 👤 Akihiko Imaya
- 👤 Hiroaki Kato
- 👤 Takayoshi Nagayasu
- 👤 Toshihiko Hirobe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 21:27
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136286; H01S5/02; H01S5/026; H01S5/0261; H01S5/04; H01S5/042; H01S5/0425; H01S5/04252; H01S5/04253; H01S5/04256; H10; H10D; H10D86/00; G02F1/136259; G02F1/136263; G02F1/13629; H01S5/0206
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
78 words
A thin film semiconductor laser array device having a gate wiring on an insulated substrate, the gate wiring comprising an inner gate wiring having a first metal layer formed on the insulated substrate and a second metal layer whose etching speed is faster than that of the first metal layer, the first metal layer and the second metal layer being overlapped so as to constitute a dual structure, and an outer gate wiring covering the inner gate wiring.
Claim 2
Dependent Claim
78 words
A thin film semiconductor laser array device having a gate wiring on an insulated substrate, the gate wiring comprising an inner gate wiring having a first metal layer formed on the insulated substrate and a second metal layer whose etching speed is faster than that of the first metal layer, the first metal layer and the second metal layer being overlapped so as to constitute a dual structure, and an outer gate wiring covering the inner gate wiring.
Claim 3
Dependent Claim
28 words
A thin film semiconductor laser array device according to claim 1, wherein the inner gate wiring has a smaller specific resistance than that of the outer gate wiring.
Claim 4
Dependent Claim
24 words
A thin film semiconductor laser array device according to claim 1 or 2, wherein the outer gate wiring is covered with an anodized film.
Claim 5
Dependent Claim
72 words
A process for constructing a thin film semiconductor laser array device having a gate wiring on an insulated substrate, the process comprising the steps of overlapping a first metal layer over a second metal layer whose etching speed is faster than that of the first metal layer, forming an inner gate wiring in pattern on the first and second metal layers, and covering the inner gate wiring with an outer gate wiring.
Claim 6
Dependent Claim
72 words
A process for constructing a thin film semiconductor laser array device having a gate wiring on an insulated substrate, the process comprising the steps of overlapping a first metal layer over a second metal layer whose etching speed is faster than that of the first metal layer, forming an inner gate wiring in pattern on the first and second metal layers, and covering the inner gate wiring with an outer gate wiring.
Claim 7
Dependent Claim
20 words
A process according to claim 4, further comprising a step of forming an anodized film on the outer gate wiring.
Claim 8
Dependent Claim
70 words
A thin film semiconductor device which includes an elongate gate wiring on an insulating substrate, the gate wiring comprising an inner gate wiring and an outer gate wiring covering the inner gate wiring, the inner gate wiring comprising a first metal layer formed on the substrate and a second metal layer overlaid on the first metal layer, said inner gate wiring having a cross-sectional width which tapers from the substrate.
Claim 9
Dependent Claim
70 words
A thin film semiconductor device which includes an elongate gate wiring on an insulating substrate, the gate wiring comprising an inner gate wiring and an outer gate wiring covering the inner gate wiring, the inner gate wiring comprising a first metal layer formed on the substrate and a second metal layer overlaid on the first metal layer, said inner gate wiring having a cross-sectional width which tapers from the substrate.
References Cited (Backward Citations)
No citation records indexed.
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