Patent EP0405923A2 successfully refreshed from Google Patents.
EP0405923A2
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Method for forming variable width isolation structures
Assignee: Samsung Electronics Co Ltd
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Filing: 1990-06-26
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Granted: —
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Expires: 2010-06-26
Abstract
Abstract Fabrication of a semi-conductor isolation structure 24 in an active layer deposited on a substrate includes the steps of forming a buried oxide layer 14 in the active layer 12 adjacent the substrate 10, forming an isolation trench 22 in the active layer by etching at least up to and optionally into the substrate, forming a dielectric isolation layer 26 on the exposed surfaces of the trench, removing the dielectric isolation layer from the bottom of the trench, and forming an isolation structure by epitaxially growing monocrystalline silicon in the trench.
Inventors
- 👤 Michael S. Liu
- 👤 Roger L. Roisen
- 👤 Curtis H. Rahn
- 👤 John B. Straight
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 03:59
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
106 words
A method for fabricating an isolation structure in an active layer deposited on a substrate, the method characterised by the steps of: (a) forming a buried oxide layer (14) in the active layer (12) adjacent the substrate (10); (b) forming an isolation trench (22) in the active layer (12) by etching at least up to and optionally into the substrate (10); (c) forming a dielectric isolation layer (26) on the exposed surfaces of the trench (22); (d) removing the dielectric isolation layer (26) from the bottom of the trench (22); and (e) forming an isolation structure (24) by epitaxially growing monocrystalline silicon in the trench (22).
Claim 2
Independent Claim
106 words
A method for fabricating an isolation structure in an active layer deposited on a substrate, the method characterised by the steps of: (a) forming a buried oxide layer (14) in the active layer (12) adjacent the substrate (10); (b) forming an isolation trench (22) in the active layer (12) by etching at least up to and optionally into the substrate (10); (c) forming a dielectric isolation layer (26) on the exposed surfaces of the trench (22); (d) removing the dielectric isolation layer (26) from the bottom of the trench (22); and (e) forming an isolation structure (24) by epitaxially growing monocrystalline silicon in the trench (22).
Claim 3
Dependent Claim
25 words
A method according to Claim 1 characterised by the step of forming a dielectric cap (28) across the upper surface of the refilled trench (22).
Claim 4
Dependent Claim
39 words
A method according to Claim 1 or 2 characterised in that multiple isolation trenches (22) are formed up to and optionally into the substrate (10), the trenches (22) being filled to have uniform levels of epitaxially grown monocrystalline silicon.
Claim 5
Independent Claim
32 words
A method according to any preceding Claim characterised in that the step forming an isolation structure (24) comprises forming an ion impurity region in situ in the isolation structure (24) during growth.
Claim 6
Independent Claim
112 words
A method for fabricating an isolation structure in an active layer deposited on a substrate, the method characterised by the steps of: (a) forming a buried oxide layer (14) in the to active layer (12) adjacent the substrate (10); (b) forming an isolation trench (22) in the active layer (12) by etching at least up to and optionally into the buried oxide (10); (c) forming a dielectric isolation layer (26) on the exposed surfaces of the trench (22); (d) continuing the isolation trench (22) by etching at least up to and optionally into the substrate (10); and (e) forming an isolation structure (24) by epitaxially growing monocrystalline silicon in the trench (22).
Claim 7
Independent Claim
112 words
A method for fabricating an isolation structure in an active layer deposited on a substrate, the method characterised by the steps of: (a) forming a buried oxide layer (14) in the to active layer (12) adjacent the substrate (10); (b) forming an isolation trench (22) in the active layer (12) by etching at least up to and optionally into the buried oxide (10); (c) forming a dielectric isolation layer (26) on the exposed surfaces of the trench (22); (d) continuing the isolation trench (22) by etching at least up to and optionally into the substrate (10); and (e) forming an isolation structure (24) by epitaxially growing monocrystalline silicon in the trench (22).
Claim 8
Dependent Claim
27 words
A method according to claim 5 or 6 characterised by the step of forming a dielectric cap (28) across the upper surface of the refilled trench (22).
Claim 9
Dependent Claim
39 words
A method according to Claim 5 or 6 characterised in that multiple isolation trenches (22) are formed up to and optionally into the substrate (10), the trenches (22) being filled to have uniform levels of epitaxially grown monocrystalline silicon.
Claim 10
Independent Claim
36 words
A method according to any of Claims 5 to 7 characterised in that the step of forming an isolation structure (24) comprises forming an ion impurity region in situ in the isolation structure (24) during growth.
Claim 11
Dependent Claim
78 words
A semiconductor device characterised by: (a) a substrate (10); (b) a monocrystalline silicon isolation structure (24) overlying less than the entirety of the substrate (10); (c) a buried oxide layer (14) bordering the isolation structure (24) and overlying the substrate (10) adjacent the isolation structure (24); (d) an active layer (12′, 12˝) overlying the buried oxide layer (14); and (e) a dielectric isolation layer (26) lying intermediate between the active layer C12′, 12˝) and the isolation structure (24).
Claim 12
Dependent Claim
78 words
A semiconductor device characterised by: (a) a substrate (10); (b) a monocrystalline silicon isolation structure (24) overlying less than the entirety of the substrate (10); (c) a buried oxide layer (14) bordering the isolation structure (24) and overlying the substrate (10) adjacent the isolation structure (24); (d) an active layer (12′, 12˝) overlying the buried oxide layer (14); and (e) a dielectric isolation layer (26) lying intermediate between the active layer C12′, 12˝) and the isolation structure (24).
Claim 13
Independent Claim
94 words
A method of using an semiconductor isolation structure (24) which comprises a substrate (10), a monocrystalline silicon isolation structure (24) overlying less than the entirety of the substrate (10), a buried oxide layer (14) bordering the isolation structure (24) and overlying the exposed substrate (10), an active layer (12′, 12˝) overlying the buried oxide layer (14), and an isolation layer (26) lying intermediate between the active layer (12′, 12˝) and the isolation structure (24), the method characterised by the step of affixing a biasing lead (30) to the back side of the substrate (10).
Claim 14
Independent Claim
94 words
A method of using an semiconductor isolation structure (24) which comprises a substrate (10), a monocrystalline silicon isolation structure (24) overlying less than the entirety of the substrate (10), a buried oxide layer (14) bordering the isolation structure (24) and overlying the exposed substrate (10), an active layer (12′, 12˝) overlying the buried oxide layer (14), and an isolation layer (26) lying intermediate between the active layer (12′, 12˝) and the isolation structure (24), the method characterised by the step of affixing a biasing lead (30) to the back side of the substrate (10).
References Cited (Backward Citations)
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