Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
152 words
A method of manufacturing a semiconductor device, which method comprises providing a semiconductor body having adjacent one major surface a device region bounded by an insulating region, providing electrical connection to the device region by applying a flowable organic material to form an organic layer on the one major surface, defining a masking layer over the organic layer, etching the organic layer selectively with respect to the underlying device and insulating regions through a window in the masking layer to form an opening exposing a contact area of the device region, and depositing electrically conductive material to form within the opening a conductive pillar contacting the contact area, characterised by removing the organic layer so as to expose the conductive pillar, providing a layer of insulating material to cover the pillar, etching the insulating layer to expose a top surface of the pillar and depositing electrically conductive material to contact the pillar.
Claim 2
Independent Claim
152 words
A method of manufacturing a semiconductor device, which method comprises providing a semiconductor body having adjacent one major surface a device region bounded by an insulating region, providing electrical connection to the device region by applying a flowable organic material to form an organic layer on the one major surface, defining a masking layer over the organic layer, etching the organic layer selectively with respect to the underlying device and insulating regions through a window in the masking layer to form an opening exposing a contact area of the device region, and depositing electrically conductive material to form within the opening a conductive pillar contacting the contact area, characterised by removing the organic layer so as to expose the conductive pillar, providing a layer of insulating material to cover the pillar, etching the insulating layer to expose a top surface of the pillar and depositing electrically conductive material to contact the pillar.
Claim 3
Dependent Claim
16 words
A method according to Claim 1, further characterised by using polyimide as the flowable organic material.
Claim 4
Dependent Claim
49 words
A method according to Claim 2, further characterised by defining the masking layer as a layer of a material selected from the group consisting of silicon oxide, silicon nitride borophosphosilicate glass and spin-on-glass and etching the organic layer through the masking layer by using a reactive ion etching process.
Claim 5
Dependent Claim
20 words
A method according to Claim 1, 2 or 3, further characterised by selectively depositing tungsten to form the conductive pillar.
Claim 6
Dependent Claim
41 words
A method according to Claim 1, 2 or 3, further characterised by forming the conductive pillar by depositing tungsten on the organic layer and then etching the tungsten layer to expose the organic layer leaving the conductive pillar in the opening.
Claim 7
Dependent Claim
40 words
A method according to Claim 4 or 5, further characterised by providing a nucleation layer over the one major surface prior to applying the flowable organic material and removing exposed parts of the nucleation layer after removing the organic layer.
Claim 8
Independent Claim
73 words
A method according to any one of the preceding claims, further characterised by providing the insulating layer by depositing a layer of silicon oxide, applying a resist layer on the silicon oxide layer to provide a flatter surface and then etching the further layer so that the silicon oxide and resist are etched at the same rate thereby providing a relatively flat surface upon exposure of the top surface of the conductive pillar.