Patent EP0405586B1 successfully refreshed from Google Patents.
EP0405586B1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device and method of burning in the same
Assignee: Toshiba Corp
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Filing: 1990-06-29
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Granted: 1997-03-26
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Expires: 2010-06-29
Abstract
No abstract record available.
Inventors
- 👤 Tohru C/O Intellectual Property Div. Furuyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 12:35
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/2851; G01R31/2855; G01R31/2856; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/40; H10W20/41; H10W20/43; G01R31/282; G01R31/2831; G01R31/286; G01R31/2863; G01R31/2872; G01R31/2879
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
94 words
A semiconductor device, comprising: - a semiconductor wafer (10) adapted for burn-in having a plurality of IC chip regions (11), - first wiring layer means (12, 13) formed on said wafer (10) for supplying a voltage to said IC chip regions (11); and - second wiring layer means connecting said IC chip regions (11) to said first wiring layer means, characterized by - a resistor element (r) interposed between said first and said second wiring layer means, said resistor element having a resistance which is higher than the sheet resistance of said wiring layers.
Claim 2
Dependent Claim
42 words
A semiconductor device according to claim 1, characterized in that contact terminals (12A, 13A) for receiving a power supply voltage from outside of said semiconductor wafer and applying the power supply voltage to said wiring layers are formed on said semiconductor wafer.
Claim 3
Dependent Claim
30 words
A semiconductor device according to claim 1 or 2, characterized in that said first wiring layer means comprise signal transmission lines (14) for controlling operation of said IC chip regions.
Claim 4
Dependent Claim
37 words
A semiconductor device according to claim 3, characterized in that contact terminals (14A) for receiving a signal from outside of said semiconductor wafer and applying the signal to said wiring layers are formed on said semiconductor wafer.
Claim 5
Dependent Claim
27 words
A semiconductor device according to any one of claims 1 to 4, characterized in that said plurality of IC chip regions constitutes an array of IC chips.
Claim 6
Dependent Claim
30 words
A semiconductor device according to any one of claims 1 to 5, characterized in that said wiring layer means are formed as individual layers having an insulation film interposed therebetween.
Claim 7
Dependent Claim
29 words
A semiconductor device according to any one of claims 1 to 5, characterized in that said first and second wiring layer means are part of the same patterning layer.
Claim 8
Dependent Claim
30 words
A semiconductor device according to any one of claims 1, to 6, characterized in that said first and second wiring layer means are not part of the same patterning layer.
Claim 9
Dependent Claim
34 words
A semiconductor device according to any one of claims 1 to 7, characterized in that said first and second wiring layer means (12, 13, 14) lie in dicing line regions on said semiconductor wafer.
Claim 10
Dependent Claim
24 words
A semiconductor device according to any one of claims 1 to 9, characterized in that said first and second wiring layer means are removable.
References Cited (Backward Citations)
No citation records indexed.
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