Semiconductor with filled-by-flow trench isolation

Claim 2

1 . A method of semiconductor device fabrication comprising: forming a trench into a substrate; forming a diffusion barrier layer in said trench; CHARACTERIZED BY THE FURTHER STEPS OF depositing a thermal stress-relief layer upon said barrier layer; depositing a filler material upon said thermal stress relief layer, said filler material having an outer surface and filling said trench, said filler material having a flow temperature which is lower than the flow temperature of said thermal stress relief layer; heating said filler material to at least its flow temperature to smooth said outer surface; and etching back said upper surface of said filler material.

Claim 3

2 . The method of claim 1 wherein said substrate is silicon.

Claim 4

3 . The method of claim 1 wherein said thermal stress relief layer is formed by deposition of a material chosen from the group consisting of tetraethoxysilane, diacetoxyditertiarybutoxysilane, and tetramethylcyclotetrasiloxane.

Claim 5

4 . The method of claim 1 wherein said thermal stress relief layer is borophosphosilicate glass.

Claim 6

5 . The method of claim 1 wherein said filler material is formed by deposition of a material chosen from the group consisting of: tetraethoxysilane, diacetoxyditertiarybutoxysilane, and tetramethylcyclotetrasiloxane, together with dopants to promote flowability.

Claim 7

6 . The method of claim 1 wherein said diffusion barrier is silicon dioxide.

Claim 8

7 . The method of claim 1 wherein said filler material contains 3±1/2 percent each boron and phosphorous by weight.

Claim 9

8 . The method of claim 1 wherein said etching-back step includes the steps of: depositing a resist material upon said outer surface of said filler material; planarizing said resist; and, etching said resist and said filler material to expose the outer surface of said material.

Claim 10

9 . The method of claim 1, wherein said heating step and said etching-­back step are performed more than once.

Claim 11

10 . The method of claim 1, wherein said heating step is performed in a furnace at 950 o C ± 50 o C.

Claim 12

11 . The method of claim 1, wherein said heating step is accomplished by rapid thermal annealing at 1050 ± 50 o C.

Claim 13

12 . The method of claim 1, wherein said thermal stress-relief layer contains dopants in a lesser concentration than said filler material.

Claim 14

13 . A method for semiconductor manufacture comprising: depositing a first silicon dioxide layer upon a surface of a silicon substrate; depositing a layer of silicon nitride upon said first layer of silicon dioxide; selectively etching through said silicon dioxide layer and said silicon nitride layer into said silicon substrate to form at least one trench, said trench having sidewalls and a bottom, a portion of said first silicon dioxide layer, and said silicon nitride layer remaining on said silicon surface; forming a second silicon dioxide layer on said sidewalls and said bottom of said trench; depositing a thermal stress relief layer upon said second silicon dioxide layer, said thermal stress relief layer being formed by the decomposition of an oxide precursor gas, said thermal stress relief layer defining a cavity within said trench; depositing a flowable filler material into said cavity, said filler material being produced by the decomposition of an oxide precursor gas, together with boron and phosphorous, said filler material being thick enough to substantially fill said cavity and to have a thickness above said surface of said silicon substrate; heating said flowable filler material to cause said filler material to flow; etching back said filler material, together with the said portion of said first silicon dioxide layer remaining on said silicon surface and together with the said portion of said silicon nitride layer remaining on said silicon surface to expose said silicon surface and to create an upper surface on said filler material which protrudes slightly above said silicon surface.

Claim 15

13 . A method for semiconductor manufacture comprising: depositing a first silicon dioxide layer upon a surface of a silicon substrate; depositing a layer of silicon nitride upon said first layer of silicon dioxide; selectively etching through said silicon dioxide layer and said silicon nitride layer into said silicon substrate to form at least one trench, said trench having sidewalls and a bottom, a portion of said first silicon dioxide layer, and said silicon nitride layer remaining on said silicon surface; forming a second silicon dioxide layer on said sidewalls and said bottom of said trench; depositing a thermal stress relief layer upon said second silicon dioxide layer, said thermal stress relief layer being formed by the decomposition of an oxide precursor gas, said thermal stress relief layer defining a cavity within said trench; depositing a flowable filler material into said cavity, said filler material being produced by the decomposition of an oxide precursor gas, together with boron and phosphorous, said filler material being thick enough to substantially fill said cavity and to have a thickness above said surface of said silicon substrate; heating said flowable filler material to cause said filler material to flow; etching back said filler material, together with the said portion of said first silicon dioxide layer remaining on said silicon surface and together with the said portion of said silicon nitride layer remaining on said silicon surface to expose said silicon surface and to create an upper surface on said filler material which protrudes slightly above said silicon surface.