Multilayered intermetallic connection for semiconductor devices

Abstract

Abstract A sputtered low copper concentration multilayered device interconnect metallurgy structure is disclosed herein. The interconnect metallurgy is seen to comprise a four-­layer structure over an interplanar stud connection (10) surrounded by an insulator (8) to make connection to a device substrate (6). The four-layer structure consists of an intermetallic bottom layer (12′) typically 700Å thick and, in a preferred embodiment would comprise TiAl₃. Above is a low percent (< 2%) weight percent copper, aluminum-copper, conductor layer (14). At the end of the process, this layer (14) is typically 8500Å thick and consists of a compositon of 99,5% aluminum and 0,5% copper (aluminum-0,5% copper hereafter). Over said con­ductor layer (14) is a second intermetallic layer (16′) of the same thickness and composition as the first intermetallic layer (12′). Finally, a top layer (18) of aluminum-0,5% copper (or pure aluminum) of approximately 100Å to 500Å thick achieves the structure.

Inventors

• 👤 Kenneth Parker Rodbell
• 👤 Paul Anthony Totta
• 👤 James Francis White

Bibliographic Details