EP0395560A2
Expired / Lapsed
EP
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Multilayered intermetallic connection for semiconductor devices
Assignee: International Business Machines Corp
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Filing: 1990-03-13
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Granted: —
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Expires: 2010-03-13
Abstract
Abstract A sputtered low copper concentration multilayered device interconnect metallurgy structure is disclosed herein. The interconnect metallurgy is seen to comprise a four-layer structure over an interplanar stud connection (10) surrounded by an insulator (8) to make connection to a device substrate (6). The four-layer structure consists of an intermetallic bottom layer (12′) typically 700Å thick and, in a preferred embodiment would comprise TiAl₃. Above is a low percent (< 2%) weight percent copper, aluminum-copper, conductor layer (14). At the end of the process, this layer (14) is typically 8500Å thick and consists of a compositon of 99,5% aluminum and 0,5% copper (aluminum-0,5% copper hereafter). Over said conductor layer (14) is a second intermetallic layer (16′) of the same thickness and composition as the first intermetallic layer (12′). Finally, a top layer (18) of aluminum-0,5% copper (or pure aluminum) of approximately 100Å to 500Å thick achieves the structure.
Inventors
- 👤 Kenneth Parker Rodbell
- 👤 Paul Anthony Totta
- 👤 James Francis White
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 05:57
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H10W70/01; H10W70/05; H05; H05K; H05K1/00; H05K1/02; H05K1/09; H05K3/00; H05K3/10; H05K3/14; H05K3/16; H05K3/38; H05K3/388; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12736; Y10T428/12743
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
60 words
A metallization structure for the interconnection of semiconductor devices on a substrate comprising : a) a layer of sputter deposited aluminum-copper of greater than 0% and less than 2% copper by weight; and b) an intermetallic layer formed at the surface of said aluminum-copper layer, said intermetallic formed of a sputter-deposited Group IVA metal and aluminum of said aluminum-copper layer.
Claim 2
Dependent Claim
60 words
A metallization structure for the interconnection of semiconductor devices on a substrate comprising : a) a layer of sputter deposited aluminum-copper of greater than 0% and less than 2% copper by weight; and b) an intermetallic layer formed at the surface of said aluminum-copper layer, said intermetallic formed of a sputter-deposited Group IVA metal and aluminum of said aluminum-copper layer.
Claim 3
Dependent Claim
57 words
A metallization structure according to Claim 1 wherein said structure comprises : a) a first intermetallic layer; b) a layer of sputter deposited aluminum-copper containing greater than 0% and less than 2% by weight; c) a second intermetallic layer similar to (a) above deposited on layer (b) above; and d) a metal overlayer deposited on layer (c).
Claim 4
Dependent Claim
21 words
A metallization structure according to Claim 2 wherein said metal overlayer is selected from the group comprising aluminum, aluminum-compounds or titanium-compounds.
Claim 5
Dependent Claim
25 words
A metallization structure according to Claim 2 wherein said metal overlayer is aluminum-copper alloy containing greater than 0% to less than 2% copper by weight.
Claim 6
Dependent Claim
15 words
A metallization structure according to Claim 2 wherein said intermetallic layer is approximately 700Å thick.
Claim 7
Dependent Claim
15 words
A metallization structure according to Claim 2 wherein said aluminum-copper layer is approximately 8500Å thick.
Claim 8
Dependent Claim
16 words
A metallization structure according to Claim 2 wherein said metal overlayer is 100Å - 500Å thick.
Claim 9
Dependent Claim
28 words
A metallization structure according to Claim 2 wherein one metal of said intermetallic layer is selected from the group comprising the Group IVA metals of the Periodic Table..
Claim 10
Dependent Claim
52 words
A metallization structure according to Claim 1 wherein said structure comprises : a) a first layer of sputter-deposited aluminum-copper containing greater than 0% and less than 2% copper by weight; b) an intermetallic layer deposited on layer (a) above; c) a second layer of the metallurgy of (a) above deposited on (b).
Claim 11
Dependent Claim
28 words
A metallization structure according to Claim 9 wherein one metal of said intermetallic layer is selected from the group comprising the Group IVA metals of the Periodic Table.
Claim 12
Dependent Claim
15 words
A metallization structure according to Claim 9 wherein the intermetallic layer is approximately 1500Å thick.
Claim 13
Dependent Claim
15 words
A metallization structure according to Claim 11 wherein the aluminum-copper layers are approximately 4250Å thick.
Claim 14
Dependent Claim
56 words
A metallization structure according to Claim 1 wherein said structure comprises : a) a first layer of sputter deposited aluminum-copper containing 0,5% copper by weight approximately 4250Å thick, b) a layer of TiAl₃ deposited on layer (a) above and approximately 1500Å thick, and c) a second layer of the metallurgy of (a) above deposited on (b).
Claim 15
Dependent Claim
83 words
A metallization structure according to Claim 1 wherein said structure comprises: a) a first layer of TiAl₃ approximately 700Å thick, b) a layer of sputter deposited aluminum copper containing 0,5% copper by weight deposited onto said TiAl₃ and being approximately 8500Å thick, c) a second layer of the metallurgy of (a) above deposited onto said layer onto (b) above, and d) a layer of sputter deposited aluminum copper containing 0,5% copper by weight deposited on layer (c) above and being approximately 250Å thick.
Claim 16
Independent Claim
95 words
A method of forming a structure for connecting semiconductor devices on a substrate comprising the steps of : a) sputter depositing a first layer of at least one of the Group IVA metals onto said substrate, b) sputter depositing onto said layer of the Group IVA metals a layer of aluminum copper of greater than 0% and less than 2% copper by weight, c) sputter depositing a second layer of the same Group IVA metal as in step a, and d) annealing the structure to form an intermetallic of the Group IVA metals and aluminum.
Claim 17
Independent Claim
95 words
A method of forming a structure for connecting semiconductor devices on a substrate comprising the steps of : a) sputter depositing a first layer of at least one of the Group IVA metals onto said substrate, b) sputter depositing onto said layer of the Group IVA metals a layer of aluminum copper of greater than 0% and less than 2% copper by weight, c) sputter depositing a second layer of the same Group IVA metal as in step a, and d) annealing the structure to form an intermetallic of the Group IVA metals and aluminum.
Claim 18
Dependent Claim
17 words
A method according to Claim 15 wherein said annealed interconnect structure is patterned to connect the devices.
References Cited (Backward Citations)
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