Patent EP0393584A2 successfully refreshed from Google Patents.
EP0393584A2
Expired / Lapsed
EP
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High frequency semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1990-04-17
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Granted: —
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Expires: 2010-04-17
Abstract
Abstract A high frequency semiconductor device comprising metal electrode leads (32) formed on one surface of a flexible film (30), a plurality of bumps (34) partially formed on the electrode patterns, a recessed portion (35) formed on the flexible film among the plurality of bumps and a plurality of electrode pads of the high frequency semiconductor device bonded to the bumps in correspondence to each other.
Inventors
- 👤 Shutaro Nambu
- 👤 Osamu Ishikawa
- 👤 Chinatsu Azuma
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 15:49
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/20; H10W76/00; H10W76/10; H10W76/12; H10W76/15; H10W76/157; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/681; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/50; H10W72/541; H10W72/5445; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
65 words
A high frequency semiconductor device comprising metal electrode patterns (32) formed on one surface of a flexible film (30), a plurality of bumps (34) partially formed on the electrode patterns, a recessed portion (35) formed on the flexible film among the plurality of bumps and a plurality of electrode pads of the high frequency semiconductor device bonded to the bumps in opposition to each other.
Claim 2
Dependent Claim
65 words
A high frequency semiconductor device comprising metal electrode patterns (32) formed on one surface of a flexible film (30), a plurality of bumps (34) partially formed on the electrode patterns, a recessed portion (35) formed on the flexible film among the plurality of bumps and a plurality of electrode pads of the high frequency semiconductor device bonded to the bumps in opposition to each other.
Claim 3
Dependent Claim
53 words
A high frequency semiconductor device according to claim 1, wherein the surface of a recessed portion formed on the flexible film is partially covered with the metal electrode pattern to be connected with the electrode pads and said pattern is provided between an input and an output to constitute a shield electrode therebetween.
Claim 4
Dependent Claim
24 words
A high frequency semiconductor device according to claim 1 or 2, wherein said semiconductor device is covered with a ceramic case to be hollow-sealed.
Claim 5
Dependent Claim
66 words
A high frequency semiconductor device comprising: a plurality of lead frames (62), a plurality of bumps (34) partially formed on a surface of each of said lead frames, one of said lead frames having a recessed portion (35) among the said plurality of bumps and a plurality of electrode pads of the high frequency semiconductor device being bonded to said bumps in correspondence to each other.
Claim 6
Dependent Claim
66 words
A high frequency semiconductor device comprising: a plurality of lead frames (62), a plurality of bumps (34) partially formed on a surface of each of said lead frames, one of said lead frames having a recessed portion (35) among the said plurality of bumps and a plurality of electrode pads of the high frequency semiconductor device being bonded to said bumps in correspondence to each other.
Claim 7
Dependent Claim
22 words
A high frequency semicondcutor device according to claim 4, wherein said semiconductor device is covered with a ceramic case to be hollow-sealed.
References Cited (Backward Citations)
No citation records indexed.
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